• Journal of the Korean Applied Science and Technology
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• v.25 no.3
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• pp.380-387
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• 2008

The effects of the applied stretch and MgADP binding on the structure of the actin and myosin cross-bridges in rabbit fibers in the rigor state have been investigatedwith improved resolution by x-ray diffraction using synchrotron radiation. To clarify the structure of the ATP hydrolysis intermediates formed by actin and myosin cross-bridges,the effects of various phosphate analogs in the of MgADP on the structure of the thin and thick filaments in glycerinated rabbit muscle fibers in the rigor state investigated by x-ray diffraction with a short exposure time using synchrotron radiation. These results strongly suggest that when MgADP and phosphate analogs such as metallofluorides(BeF3 and AlF4)and vanadate(VO4(Vi)) were added the rigor fibers in the presence of the ATP-depletion backup system, the intensities of the actin-based layer lines were markedly weakened. We found that the intensity of the 14.5 nm-based meridional reflections increase by 20-50% when phosphate analogs such as metallofluorides(BeF3 and AlF4) and vanadate(VO4(Vi)) was added to the rigor muscle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.176-181
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• 2000

Computer-based atomistic simulation methods are applied to address quantitatively the crystal defect chemistry of strontium hexaaluminate, SrAl/sub 12/O/sub 19/. Our calculations show that oxygen Frenkel disorder is the dominant intrinsic defect mode to be expected in the multi-component oxide, though Schottky disorder may also exist. When La and Mg enter into SrAl/sub 12/O/sub 19/. Mg prefers to occupy Al(3)4f tetrahedral sites in the magnetoplumbite structure. Our calculations also indicate that O/sub Sr/ defect is improbable in the structure.

• Honam Mathematical Journal
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• v.43 no.3
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• pp.513-522
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• 2021

In this current study, we aim to give some applications on fourth-order differential subordination for p-valent meromorphic functions in the region U^* = {z ∈ ℂ : 0 < |z| < 1} = U∖{0}, where U = {z ∈ ℂ : |z| < 1} , involving the linear operator 𝓛^*_pf. By making use of basic concepts in theory of the fourth-order, we find new outcomes.

• Journal of Surface Science and Engineering
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• v.38 no.4
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• pp.144-149
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• 2005

ZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from $\~40$ MPa to $\~-1100$MPa depending on processing variables. The specimens were thermally cycled from R.T. to $250^{\circ}C$ to investigate the stress variation as a function of temperature. SEM was employed to characterize the microstructure of te films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property o the films was studied by PL measurements. At the highest substrate temperature $800^{\circ}C$ the film exhibited sharper UV peaks unlike other conditions.

• Progress in Medical Physics
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• v.29 no.4
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• pp.101-105
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• 2018

In this paper, a neutron moderation system for boron neutron capture therapy (BNCT) based on a $^{252}Cf$ neutron source is proposed. Different materials have been studied in order to produce a high percentage of epithermal neutrons. A moderator with a construction mixture of $AlF_3$ and Al, three reflectors of $Al_2O_3$, BeO, graphite, and seven filters (Bi, Cu, Fe, Pb, Ti, a two-layer filter of Ti+Bi, and a two-layer filter of Ti+Pb) is considered. The MCNPX simulation code has been used to calculate the neutron and gamma flux at the output window of the neutronic system. The results show that the epithermal neutron flux is relatively high for four filters: Ti+Pb, Ti+Bi, Bi, and Ti. However, a layer of Ti cannot reduce the contribution of ${\gamma}$-rays at the output window. Although the neutron spectra filtered by the Ti+Bi and Ti+Pb overlap, a large fraction of neutrons (74.95%) has epithermal energy when the Ti+Pb is used as a filter. However, the percentages of the fast and thermal neutrons are 25% and 0.5%, respectively. The Bi layer provides a relatively low epithermal neutron flux. Moreover, an assembly configuration of 30% $AlF_3+70%$ Al moderator/$Al_2O_3$ reflector/a two-layer filter of Ti+Pb reduces the fast neutron flux at the output port much more than other assembly combinations. In comparison with a recent model suggested by Ghassoun et al., the proposed neutron moderation system provides a higher epithermal flux with a relatively low contamination of gamma rays.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.817-823
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• 2000

A solid-state electrochemicall cell for sensing CO2 gas was fabricated using a solid electrolyte of Li2CO3-Li3PO4-Al2O3 mixture and a reference electrode of LiMn2O4. The e.m.f. (electromotive force) of sensor showed a good accordance with theoretical Nernst slope (n=2) for CO2 gas concentration range of 100-10000 ppm above 35$0^{\circ}C$. The e.m.f. of sensor was constant regardless of oxygen partial pressure at the high temperature above 0.1 atm. It was, however, a little depended on oxygen partial pressure as the pressure decreased below 0.1 atm. The oxygen-dependency of our sensor gradually disappeared as the operating temperature increased. The sensing behavior of our CO2 sensor was affected by the presence of water vapor, but its effect was small comparing with other sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.439-440
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• 2007

To enhance the electron injection from the cathode of organic light-emitting diodes (OLEDs), We have studied characteristics of device that electron injection layer(EIL) is inserted between emissive layer and cathode. We fabricated bi-layer cathode $Li_2O$(x nm)/Al(100nm) and LiF(x nm)/Al(100nm) using LiF and $Li_2O$ as an electron injection layer. We analyzed the current efficiency, luminance efficiency, and external quantum efficiency of the device by varying the thickness of $Li_2O$ and LiF to be 0.5nm, 1nm, or 3nm. Using the EIL, we have obtained the efficiency of 7cd/A and the luminance of $20,000cd/m^2$. There is an improvement of efficiency by more than 3 times than the device without the $Li_2O$ layer.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.66-74
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• 1999

InAlGaAs/InGaAs HBTs with the various emitter junction gradings(xf=0.0-1.0) and the modified collector structures (collector- I;n-p-n, collector-II;i-p-n) are simulated and analyzed by HMC (Hybrid Monte Carlo) method in order to find an optimum structure for the shortest transit time. A minimum base transit time($ au$b) of 0.21ps was obtainsed for HBT with the grading layer, which is parabolically graded from $x_f$=1.0 and xf=0.5 at the emitter-base interface. The minimum collector transit time($\tau$c) of 0.31ps was found when the collector was modified by inserting p-p-n layers, because p layer makes it possible to relax the electric field in the i-type collector layer, confining the electrons in the $\Gamma$-valley during transporting across the collector. Thus InAlGaAs/InGaAs HBT in combination with the emitter grading($x_f$=0.5) and the modified collector-III showed the transit times of 0.87 psec and the cut-off frequency (f$\tau$) of 183 GHz.

• Transactions of Materials Processing
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• v.14 no.5 s.77
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• pp.432-438
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• 2005

Among the most of manufacturing process, plastic deformation method offers a significant advantage in productivity and enable mass production with controlled quality and low cost. From the point of view, micro forming is a well suited technology in manufacturing very small metallic parts, in particular for mass production, as they are required in many industrial products. Meanwhile, Al 5083 superplastic alloy with very small grains has a great advantage in achieving micro deformation under low stress due to its relatively low strength at a specific high temperature range. This paper describes the micro formability of Al 5083 superplastic alloy and its application to die forging of micro patterns. Micro formability tests of Al 5083 superplastic alloy were carried out with the specially designed micro forging system by using V-grooved micro dies and pyramidal dies made of (100) silicon. With these dies, micro forging was conducted by varying the applied load, material temperature and forging time The micro formability of Al 5083 superplastic alloy was evaluated by comparing $R_f$ value, where $R_f\;=\;A_f/A_v$ ($A_v$ : cross-sectional area of the flowed metal, $A_v$ : cross sectional area of V-groove). The micro formability of 3 dimensional Patterns was also evaluated using Pyramidal type micro dies.