• Corrosion Science and Technology
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• v.18 no.3
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• pp.110-116
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• 2019

Resistances to pitting corrosion of additive manufactured (AM) Ti-6Al-4V alloys in 0.6 M NaBr and 0.6 M NaCl aqueous solutions were compared using micro-droplet cell techniques. With respect to the pitting corrosion resistance, this study focused on two different types of halide anions in aqueous solutions, i.e. $Br^-$ and $Cl^-$. The differences between $Br^-$ and $Cl^-$ halide anions for breakdown on passive films of AM Ti-6Al-4V alloy were explained using Langmuir adsorption model with their equilibrium adsorption coefficients. The results of the analysis showed that the lower resistance to pitting potential of AM Ti-6Al-4V alloy in $Br^-$ aqueous solution was attributed to the higher equilibrium adsorption coefficient of Br-. In addition, micro-electrochemical test results showed that the pitting corrosion resistance of dark grains in additive manufactured Ti-6Al-4V alloy was lower as compared to that of bright grains due to the larger volume of ${\alpha}^{\prime}$ phase that caused the susceptibility to pit initiation.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.39 no.4
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• pp.291-297
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• 2003

Al-brass is usually used as the tube material of vessel's heat exchanger for seawater cooling system because it has high thermal conductivity and good mechanical properties and high corrosion resistance due to cuprous oxide (Cu20) layer against seawater. However, Al-brass tubes of heat exchanger for vessel at the actual environment is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment In this paper, the effect of corrosion environment on the stress corrosion cracking of Al-brass in various NH4OH of 3.5% NaCl solution, under flow by constant displacement tester. Based on the test results, the behavior of polarization, stress corrosion crack propagation and dezincification phenomenon of Al-brass are investigated. The main results are as follows：(1) Increasing range of potential from open circuit potential to repassivation gets lower, as the contain rate of NH4OH gets higher. (2) As contain rate of NH4OH gets higher, SCC of Al-brass is become activation but the protection film(Cu20) of Al-brass is created in 3.5% NaCl solution. (3) According as content of NH4OH increases in 3.5% NaCl solution, the dezincifiction area is spread. It is concluded that dezincification occurred by localized preferential anodic dissolution at stress focusing region.

• Journal of Environmental Science International
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• v.21 no.3
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• pp.377-382
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• 2012

Recent research has demonstrated that treating poultry litter with alum (aluminum sulfate) and aluminum chloride can remove environmental threats (ammonia, soluble phosphorus and odor) posed by litter. However, scientific information available on heavy metal in poultry litter with liquid aluminum chloride is still lacked. The purpose of this study was to investigate the effects of applying liquid aluminum chloride to rice hulls on heavy metals and to provide basic information to producers. Six hundred 0-d-old broiler were assigned to 4 treatments (control, 100 g, 200 g and 300 g of liquid $AlCl_3$/kg of rice hulls, respectively) with 3 replicates of 50 birds. The experimental period lasted for 6 weeks. Liquid $AlCl_3$ was sprayed on the rice hulls surface using a small hand pump. Total Al contents increased (P<0.05) with the increasing levels of liquid $AlCl_3$ levels over time in comparison with control groups. Total Cu and Pb were lowered in all liquid $AlCl_3$ treatments compared with the controls during 6 weeks. Significant differences in all treatments were found for total Cu contents at 2, 3 and 5 weeks and total Pb at 0, 1, 2 and 3 weeks. Total Zn contents decreased with time when compared with controls. However, no significant differences in total Zn contents were observed among all treatments. In light of environmental managements, spraying liquid $AlCl_3$ to rice hulls indicated the significant advantages in reducing heavy metals as well as improving poultry industrial competitiveness.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2006.05a
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• pp.150-155
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• 2006

제강공정에서 발생되는 $CaO-Al_{2}O_{3}-SiO_{2}$계 조성을 갖는 2 차 정련슬래그 (래들 슬래그)를 이용하여 하수슬러지용 고화재개발 및 하수슬러지 고화체의 물성에 관한 연구를 수행하였다. 래들슬래그는 냉각과정에서 분화되는 성질이 있어 냉각후 분말상의 슬래그가 만들어진다. 분말상 슬래그의 주 결정상은 $12CaO{\cdot}7Al_{2}O_{3}$ 및 $2CaO{\cdot}SiO_{2}$로 구성되어 있다. $12CaO{\cdot}7Al_{2}O_{3}$ 상은 속경성 시멘트의 특징이 있다. 또한 $CaSO_{4}$와 혼합사용시 ettringite 상을 형성시켜 하수슬러지의 함수율 저감효과 및 강도발현 효과가 우수한 결과를 얻었다. $Cl^{-}$ 이온의 고정화면에서는 고화재중 래들슬래그의 혼합비가 높을수록 고화체 구조내에 $Cl^{-}$ 이온이 고정화되어 용출량은 감소하였다. 고화재로서 제강부산물을 사용하기 때문에 경제성이 있으며, $Cl^{-}$ 이온 함량이 높은 하수슬러지 고화재로서의 재활용이 기대된다.

• Journal of Environmental Science International
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• v.17 no.2
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• pp.233-237
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• 2008

The objective of this study was conducted to evaluate the effects of poultry litter amendments on pH and soluble reactive phosphorus (SRP) in poultry litter. Two laboratory studies were conducted for 42 d in Exp. 1 and for 10 d in Exp. 2, respectively. The poultry litter was treated with various amendments which included 4 g fly ash and 4 g $AlCl_3\;(AlCl_36H_2O)/100g$ litter in Exp. 1 and 4 g alum$(Al_2(SO_4){_3}\;14H_2O)$, 8 g alum, 8.66 g liquid alum, and 17.3 g liquid alum/100 g litter in Exp. 2; untreated litter served as controls. There were no differences in pH between control and T1(4 g fly ash) and SRP contents between T1(4 g fly ash) and T2(4 g $AlCl_3$) in Exp. 1. A significant difference in pH and SRP contents in Exp. 2 was observed among all treatments(P< 0.05). In experiment 1, T1(4 g fly ash) and T2(4 g $AlCl_3$) at 42 d decreased SRP in litter by 47.1% and 62.6% of that from litter alone, respectively. In experiment 2, T1(4 g alum), T2(8.66 g liquid alum), T3(8 g alum), and T4(17.3 g liquid alum) treatments at 10 days reduced SRP contents by up to 36.2%, 62.9%, 87.0%, and 83.9%, respectively, when compared with the controls. Decrease in SRP contents was chiefly associated with reduction in litter pH. These results indicate that use of various litter amendments to limit P solubility has potential and should be pursued as a means of reducing soluble reative phosphorus during short term.

• Journal of Powder Materials
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• v.15 no.6
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• pp.496-502
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• 2008

Aluminum nitride (AlN) powders were prepared by the chemical vapor synthesis (CVS) process in the $AlCl_{3}-NH_{3}-N_{2}$ system. Aluminum chloride ($AlCl_3$) as the starting material was gasified in the heating chamber of $300^{\circ}C$. Aluminum chloride gas transported to the furnace in $NH_{3}-N_{2}$ atmosphere at the gas flow rate of 200-400ml/min. For samples synthesized between 700 and $1200^{\circ}C$, the XRD peaks corresponding to AlN were comparatively sharp and also showed an improvement of crystallinity with increasing the reaction temperature. In additions, the average particle size of the AlN powders decreased from 250 to 40 nm, as the reaction temperature increased.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.372-378
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• 2009

The coloring agents $Cr_2O_3$ and $CrCl_3$ were manipulated in this study to synthesize ZnO-$Al_2O_3-Cr_2O_3$ system pigments by changing their mixing ratio. The addition of varying amounts of mineralizer was also tested to obtain better color development of the pink pigment. In the synthesis of ZnO- $Al(OH)_3-Cr_2O_3-CrCl_3$ pigments, the best composition is $Cr_2O_3$-0.1 mole and $CrCl_3$-0.2 mole when $Cr_2O_3$ is partially substituted with $CrCl_3$ to synthesize them. Among the $ZnAl_{1.6-x}Cr_{0.2+x}O_4$ compositions to which a mineralizer was not added, ZnO-1mole, $Al(OH)_3$-1.7 mole, $Cr_2O_3$-0.075 mole, and $CrCl_3$-0.15 mole showed a desirable pink hue. The measurements of pigments $L^*$, $a^*$ and $b^*$, were $L^*$ 81.81, $a^*$ 16.65 and $b^*$ 0.45, and when the synthesized pigments were applied to a zinc glaze, the measurements were $L^*$ 60.41, $a^*$ 28.39, and $b^*$ 16.97. When adding a mineralizer, a 2 wt% addition resulted in the most favorable pink color. The composition for the most favorable result that included a mineralizer was $Al(OH)_3$-1.8 mole, $Cr_2O_3$-0.05 mole, and $CrCl_3$-0.1 mole, and the calcination temperature was $1250^{\circ}C$. The pigment color analysis showed $L^*$ 82.52, $a^*$17.14 and $b^*$-1.18, and the measurements of $L^*$, $a^*$ and $b^*$ in the glaze were $L^*$ 60.97, $a^*$ 28.77 and $b^*$ 13.72.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.