• Proceedings of the Korean Nuclear Society Conference
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• 1996.05c
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• pp.385-390
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• 1996

Cs는 AW500 에서 높은 분배계수 값(K$_{Cs}$>$10^3$$m\ell$/g)을 얻었으며 , Sr은 13X, 평형 용액의 pH=10의 조건에서 최대의 분배계수값(K$_{Sr}$~$10^4$$m\ell$/g)을 보였고, 평형용액의 pH 증가에 따라서 급격히 증가하는 경향을 보였다. 또한 AW500-Cs와 13X-Sr계는 고액비, 즉 V/m=40, 및 초기용액의 pH가 3 이상에서 최대의 분배계수 값을 얻었으며, 혼합제올라이트의 비(AW500/13X)가 1.5인 조건에서 Cs과 Sr을 효과적으로 동시에 분리할 수 있음 보았다. 그리고 1,10$0^{\circ}C$에서 배소한 AW500-Cs는 CsAlSi$_2$O$_{6}$로 재결정되며 , 13X-Sr은 SrAI$_2$Si$_2$O$_{8}$ 및 SiO$_2$상(phase)으로 재결정한다.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.765-774
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• 1995

The hot deformation behaviour of particulate reinforced aluminium 6061 Al composite were investigated by hot compression tests in the temperature range from 623K to 823K with strain rate of 10$^{-3}$ ~5.0 S$^{-1}$ . The effect of reinforced particulate volume fraction, mean diameter on the high temperature flow stress has also been studied. Experimental results showed that the increase in the volume fraction of reinforcement contributed to the rising of yield stress, but the stress above the yield point appeared to be steady state at all volume fractions. The apparent activation energy for deformation was 290KJ/mo1 for unreinforced 6061 Al, 327KJ/mo1 for 6061 Al-20vo1.% SiC composite and 531KJ/mo1 for 6061 Al-20vo1.%A1$_2$O$_3$composite. It appeared that $Al_2$O$_3$reinforced composites was more difficult to hot deform.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.5
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• pp.684-693
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• 2005

Statement of problem: Ti-6Al-7Nb alloy is used instead of Ti-6Al-4V alloy that was known to have toxicity. Purpose: This study was performed to investigate the effect of electrolyte concentration on the surface characteristics of anodized and hydrothermally-treated Ti-6Al-7Nb alloy Materials and methods: Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1,000 SiC paper ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed at current density $30mA/cm^2$ up to 300 V in electrolyte solutions containing $\beta-glycerophosphate$ disodium salt hydrate $(\beta-GP)$ and calcium acetate (CA). Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. All samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. Results and conclusion: The results obtained were summarized as follows: 1. After hydrothermal treatment, the precipitated HA crystals showed the dense fine needle shape. However, with increasing the concentration of electrolyte they showed the shape of thick and short rod. 2. When the dense fine needle shape crystals was appeared after hydrothermal treatment, the precipitation of HA crystals in Hanks' solution was highly accelerated. 3. The crystal structures of $TiO_2$ in anodic oxide film were composed of strong anatase peak and weak rutile peak as analyzed with thin-film X-ray diffractometery. 4. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal in Hanks' solution.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.228-234
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• 2009

It is well known that the formation of $SiO_2$, $Al_2O_3$ and/or other oxides at the steel surface during the annealing process deteriorates the surface quality of galvanized steels. It is important to minimize oxide formation during the annealing process for the superior surface quality of galvanized steels. In order to minimize the oxide formation on the steel surface, antimony was chosen as an alloying element to the commercial steels. Then, the effect of alloying element on the oxidation behavior was investigated. A small amount of antimony was added to two types of steels, one with 0.1% C, 1.0% Si, 1.5% Mn, 0.08% P, and the other with 0.002% C, 0.001% Si, 0.104% Mn, 0.01% P. Then, the oxidation behavior was investigated from $650{\sim}900^{\circ}C$ in the air. The addition of antimony to the steels retarded the outward diffusion of elements during the oxidation, resulting in reduction of the oxidation rate.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.573-579
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• 2011

Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

• Economic and Environmental Geology
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• v.40 no.6
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• pp.713-726
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• 2007

The Daebong deposit consists of gold-silver-bearing mesothermal massive quartz veins which fill fractures along fault zones($N10{\sim}20^{\circ}W,\;40{\sim}60^{\circ}SW$) within banded gneiss or granitic gneiss of Precambrian Gyeonggi massif. Ore mineralization of the deposit is composed of massive white quartz vein(stage I) which was formed in the same stage by multiple episodes of fracturing and healing and transparent quartz vein(stage II) which is separated by a major faulting event. The hydrothermal alteration of stage I is sericitization, chloritization, carbonitization, pyritization, silicification and argillization. Sericitic zone occurs near and at quartz vein and includes mainly sericite, quartz, and minor illite, carbonates and epidote. Chloritic zone occurs far from quartz vein and is composed of mainly chlorite, quartz and minor sericite, carbonates and epidote. Fe/(Fe+Mg) ratios of sericite and chlorite range 0.36 to 0.59($0.51{\pm}0.10$) and 0.66 to 0.73($0.70{\pm}0.02$), and belong to muscovite-petzite series and brunsvigite, respectively. Calculated $Al_{IV}-Fe/(Fe+Mg)$ diagrams of sericite and chlorite suggest that this can be a reliable indicator of alteration temperature in Au-Ag deposits. Calculated activities of chlorite end member are $a3(Fe_5Al_2Si_3O_{10}(OH){_6}=0.00964{\sim}0.0291,\;a2(Mg_5Al_2Si_3O_{10}(OH){_6}= 9.99E-07{\sim}1.87E-05,\;a1(Mg_6Si_4O_{10}(OH){_6}=5.61E-07{\sim}1.79E-05$. It suggest that chlorite from the Daebong deposit is iron-rich chlorite formed due to decreasing temperature from $T>450^{\circ}C$. Calculated $log\;{\alpha}K^+/{\alpha}H^+,\;log\;{\alpha}Na^+/{\alpha}H^+,\;log\;{\alpha}Ca^{2+}/{\alpha}^2H^+$ and pH values during wall-rock alteration are $4.6(400^{\circ}C),\;4.1(350^{\circ}C),\;4.0(400^{\circ}C),\;4.2(350^{\circ}C),\;1.8(400^{\circ}C),\;4.5(350^{\circ}C),\;5.4{\sim}6.5(400^{\circ}C)\;and\;5.1{\sim}5.5(350^{\circ}C)$, respectively. Gain elements (enrichment elements) during wallrock alteration are $K_2O,\;P_2O_5,\;Na2O$, Ba, Sr, Cr, Sc, V, Pb, Zn, Be, Ag, As, Ta and Sb. Elements(Sr, V, Pb, Zn, As, Sb) represent a potentially tools for exploration in mesothermal and epithermal gold-silver deposits.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.257-257
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• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.