• Title/Summary/Keyword: $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ Uultilayer($Ag/As_{40}Ge_{10}Se_{15}S_{35}$

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Characteristics of the Photoinduced Anisotropy(PA) in Ag/AsGeSeS Multilayer Thin Films (Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성)

  • Yeo, Cheol-Ho;Na, Su-Woong;Shin, Kyung;Park, Jeong-Il;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.144-150
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    • 2003
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.