• Title/Summary/Keyword: $A_2/O$ 공정

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Enhancement of $SO_2$ Sorption of $CuO/{\gamma}-{A1_2}$O$_3$ Sorbent by Additives (첨가제에 의한 $CuO/{\gamma}-A1$$_2$O$_3$ 흡수제의 $SO_2$ 제거능력의 향상)

  • 정상문;유경선;김상돈
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 1995.11a
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    • pp.38-41
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    • 1995
  • 화석연료의 연소에 의하여 방출되는 SO$_2$ 와 NO 에 의한 대기오염의 심각성은 이미 잘 알려져 있으며 그에 따른 배출규제 또한 강화되고 있다. 최근에는 탈황과 탈질을 동시에 처리하는 동시 탈황탈질 공정의 연구가 진행되고 있다. 동시제거 공정은 주로 흡수제/촉매를 토대로 개발되고 있으며 산화구리가 담지된 알루미나 (CuO/${\gamma}$-A1$_2$O$_3$) 흡수제/촉매는 SOx, NOx 동시제거에 효과적인 물질로 알려져 있다. 담지된 CuO 와 담체 A1$_2$O$_3$는 SO$_2$$O_2$ 존재하에 반응하여 CuSO$_4$$Al_2$(SO$_4$)$_3$ 가되며 [1] CuSO$_4$ 와 미반응된 CuO 는 NO 제거를 위한 촉매로서의 역할을 하게 된다 [2].

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Comparison of Anoxic/Oxic Membrane Bioreactor - Reverse Osmosis and Activated Sludge Process-Microfiltration-Reverse Osmosis Process for Advanced Treatment of Wastewater (폐수의 고도처리를 위한 무산소/호기형 분리막생물반응조 - 역삼투 공정과 활성슬러지공정 - 정밀여과 - 역삼투 공정의 비교)

  • Roh, Sung-Hee;Kim, Sun-Il;Quan, Hong-hua;Song, Yon-Ho
    • Applied Chemistry for Engineering
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    • v.17 no.5
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    • pp.521-526
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    • 2006
  • A membrane bioreactor (MBR) is an effective tool for wastewater treatment with recycling. MBR process has several advantages over conventional activated sludge process (ASP); reliability, compactness, and quality of treated water. The resulting high-quality and disinfected effluents suggest that MBR process can be suitable for the reused and recycling of wastewater. An anoxic/oxic (A/O) type MBR was applied to simultaneous removal of organics and nutrients in sewage. At first, the efficiency of submerged MBR process was investigated using a hollow fiber microfiltration membrane with a constant flux of $10.2L/m^2{\cdot}h$ at each solids retention time (SRT). Results showed that protein/carbohydrate (P/C) ratio increased and total extracellular polymeric substances (EPS) remained constant with SRT increased. Secondly, A/O type MBR with a reverse osmosis (RO) membrane was employed to treat the municipal wastewater. The performance of A/O type MBR-RO process is better for the treatment of organics and nutrients than ASP-MF-RO process in terms of consistent effluents quality.

Effects of Calcium on the Activity of V2O5/TiO2 Catalysts in SCR Processes (SCR 공정에서 Calcium 성분이 V2O5/TiO2 촉매 활성에 미치는 영향)

  • Kim, Jin-Kil;Park, Kwang-Hee;Hong, Sung-Chang;Lee, Eui-Dong;Kang, Yong
    • Korean Chemical Engineering Research
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    • v.50 no.5
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    • pp.772-777
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    • 2012
  • Factors acting on the deactivation of $V_2O_5/TiO_2$ catalysts were investigated in the selective catalytic reduction(SCR) process for long term operation. The activity of $V_2O_5/TiO_2$ catalysts was decreased rapidly after 8 months from the starting of operation in the selective catalytic reaction processes. From ICP-AES analysis, the deactivation of the used catalysts could be caused from the calcium component included in urea solution as a reducing agent. It was found from the $NH_3$-TPD experiments that the strong basic element like Ca component drastically affected the acidity of the $V_2O_5/TiO_2$ catalyst. The results gave an explanation on the reason why the component of Ca, even though its concentration is very low, could lead to the deactivation of $V_2O_5/TiO_2$ catalyst in the selective catalytic reaction processes.

The Direct Bonding of Copper to Alumina by $Cu-Cu_2$O Eutectic Reaction (Cu-C$u_2$O의 공정반응에 의한 구리와 알루미나의 직접접합)

  • Yu, Hwan-Seong;Lee, Im-Yeol
    • Korean Journal of Materials Research
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    • v.2 no.4
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    • pp.241-247
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    • 1992
  • The direct bonding of Cu to $Al_2O_3$, employing the $Cu-Cu_2$O eutectic skin melt, is investigated. The bonding force and interface structure of samples prepared by oxidation at $1015^{\circ}C$ in $1.5{\times}10^{-1}$torr followed by bonding at 107$5^{\circ}C$ under $10_{-3}$ torr vacuum have been studied using peeling test, SEM, EDS and XRD. It has been found that the optimal strength is obtained for 3 minutes of oxidation while the adhesion force is decreased with oxidation shorter or longer than 3 minutes. The rupture occured at alumina-eutectic interface. Fractured surface of $Al_2O_3$covered with $Cu_2$O nodules pulled out of the Cu indicates that bonding strength is governed by $Cu-Cu_2$O interface and not by $Cu_2$O-A$l_2O_3$interface. The bonding force is slightly increased with bonding time and the reaction phases of CuA$l_2O_4$and $CuAlO_2$are formed at interface during the bonding.

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Determination of Efficient Operating Condition of UV/H2O2 Process Using the OH Radical Scavenging Factor (수산화라디칼 소모인자를 이용한 자외선/과산화수소공정의 효율적인 운전 조건도출)

  • Kim, Seonbaek;Kwon, Minhwan;Yoon, Yeojoon;Jung, Youmi;Hwang, Tae-Mun;Kang, Joon-Wun
    • Journal of Korean Society of Environmental Engineers
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    • v.36 no.8
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    • pp.534-541
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    • 2014
  • This study investigated a method to determine an efficient operating condition for the $UV/H_2O_2$ process. The OH radical scavenging factor is the most important factor to predict the removal efficiency of the target compound and determine the operating condition of the $UV/H_2O_2$ process. To rapidly and simply measure the scavenging factor, Rhodamine B (RhB) was selected as a probe compound. Its reliability was verified by comparing it with a typical probe compound (para-chlorobenzoic acid, pCBA); the difference between RhB and pCBA was only 1.1%. In a prediction test for the removal of Ibuprofen, the RhB method also shows a high reliability with an error rate of about 5% between the experimental result and the model prediction using the measured scavenging factor. In the monitoring result, the scavenging factor in the influent water of the $UV/H_2O_2$ pilot plant was changed up to 200% for about 8 months, suggesting that the required UV dose could be increased about 1.7 times to achieve 90% caffeine removal. These results show the importance of the scavenging factor measurement in the $UV/H_2O_2$ process, and the operating condition could simply be determined from the scavenging factor, absorbance, and information pertaining to the target compound.

Combined Removal of n-heptane and CO using Plasma-catalytic Process (플라즈마/촉매 공정을 이용한 n-헵테인과 일산화탄소 동시제거)

  • Lee, Sang Baek;Jo, Jin Oh;Mok, Young Sun
    • Journal of the Korean Institute of Gas
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    • v.20 no.2
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    • pp.1-9
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    • 2016
  • Combined removal of n-heptane and carbon monoxide (CO) using a plasma-catalytic process was investigated. The performance of the plasma-catalytic process was compared with that of the catalyst-alone process to characterize the decomposition of n-heptane and CO with the operation parameters such as the type of catalyst, reaction temperature, and discharge power. From several sets of experiments, it was found that the decomposition efficiency of n-heptane mainly depended on the specific input energy rather than the reactor temperature, whereas the oxidation of CO on both the energy density and the reaction temperature. The results conducted over several metal oxide catalysts exhibited that the decomposition efficiency of n-heptane was in the order: $Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3{\approx}Ag/{\gamma}-Al_2O_3$. Especially, $Pd/{\gamma}-Al_2O_3$ catalyst did hardly generate CO as a byproduct during the decomposition of n-heptane under an appropriate condition, revealing $CO_2$ selectivity of nearly 100%. The CO oxidation efficiency was largely affected by the type of catalyst ($Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$). At temperatures below $180^{\circ}C$, the plasma-catalytic process was more effective in the oxidation of CO, while above $180^{\circ}C$, the catalytic process resulted in slightly higher CO oxidation efficiency.

Efficient Desulfurization and Denitrification by Low Temperature Plasma Process (저온 플라즈마 공정에 의한 효율적인 탈황 및 탈질)

  • Kim, Sung-Min;Kim, Dong-Joo;Kim, Kyo-Seon
    • Korean Chemical Engineering Research
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    • v.43 no.1
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    • pp.129-135
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    • 2005
  • In this study, we have analyzed the removal efficiencies of $SO_2$ and $SO_2/NO$ by the pulsed corona discharge process and investigated the effects of several process variables on those removal efficiencies systematically. The effects of process variables such as applied voltage, pulse frequency, residence time, and initial concentrations of reactants (NO, $SO_2$, $NH_3$, $H_2O$, and $O_2$) on the removal efficiency were analyzed. As the applied voltage, the pulse frequency or the residence time increases or as the $O_2$ or the $H_2O$ or the $NH_3$ concentration in the inlet feed gas stream increases, the $SO_2$ removal efficiencies and the simultaneous removal efficiencies of $SO_2/NO$ also increase. These experimental results can be used as a basis to design the pulsed corona discharge process to remove $NO_x$ and $SO_x$.

Atomic Layer Deposition of ZrSiO4 and HfSiO4 Thin Films using a newly designed DNS-Zr and DNS-Hf bimetallic precursors for high-performance logic devices (DNS-Zr과 DNS-Hf 바이메탈 전구체를 이용한 Gate Dielectric용 ZrSiO4 및 HfSiO4 원자층 증착법에 관한 연구)

  • Kim, Da-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.138-138
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    • 2017
  • 차세대 CMOS 소자의 지속적인 고직접화를 위해서는 높은 gate capacitance와 낮은 gate leakage current를 확보를 위한, 적절한 metal gate electrode와 high-k dielectric 물질의 개발이 필수적으로 요구된다. 특히, gate dielectric으로 적용하기 위한 다양한 high-k dielectric 물질 후보군 중에서, 높은 dielectric constant와, 낮은 leakage current, 그리고 Si과의 우수한 열적 안정성을 가지는 Zr silicates 또는 Hf silicates(ZrSiO4와 HfSiO4) 물질이 높은 관심을 받고 있으며, 이를 원자층 증착법을 통해 구현하기 위한 노력들이 있어왔다. 그러나, 현재까지 보고된 원자층 증착법을 이용한 Zr silicates 및 Hf silicates 공정의 경우, 개별적인 Zr(또는 Hf)과 Si precursor를 이용하여 ZrO2(또는 HfO2)과 SiO2를 반복적으로 증착하는 방식으로 Zr silicates 또는 Hf silicates를 형성하고 있어, 전체 공정이 매우 복잡해지는 문제점 뿐 아니라, gate dielectric 내에서 Zr과 Si의 국부적인 조성 불균일성을 야기하여, 제작된 소자의 신뢰성을 떨어뜨리는 문제점을 나타내왔다. 따라서, 본 연구에서는 이러한 문제점을 개선하기 위하여, 하나의 precursor에 Zr (또는 Hf)과 Si 원소를 동시에 가지고 있는 DNS-Zr과 DNS-Hf bimetallic precursor를 이용하여 새로운 ZrSiO4와 HfSiO4 ALD 공정을 개발하고, 그 특성을 살펴보고자 하였다. H2O와 O3을 reactant로 사용한 원자층 증착법 공정을 통하여, Zr:Si 또는 Hf:Si의 화학양론적 비율이 항상 일정한 ZrSiO4와 HfSiO4 박막을 형성할 수 있었으며, 이들의 전기적 특성 평가를 진행하였으며, dielectric constant 및 leakage current 측면에서 우수한 특성을 나타냄을 확인할 수 있었다. 이러한 결과를 바탕으로, bimetallic 전구체를 이용한 ALD 공정은 차세대 고성능 논리회로의 게이트 유전물질에 응용이 가능할 것으로 판단된다.

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A Comparison between the Decomposition of Bisphenol A and the Concentration of Hydrogen Peroxide Formed during Ozone/Catalyst Oxidation Process (오존/촉매 산화공정에서 비스페놀 A의 분해와 생성된 과산화수소의 농도 비교)

  • Choi, Jae Won;Lee, Hak Sung
    • Applied Chemistry for Engineering
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    • v.28 no.6
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    • pp.619-625
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    • 2017
  • In this study, the formation of hydroxyl radical and decomposition characteristics of bisphenol A (BPA) was investigated by quantifying hydrogen peroxide formed as a reaction by-product during the formation stage of hydroperoxyl radical. The direct oxidation reaction by ozone only decomposed BPA just like the Criegee mechanism under the condition where radical chain reactions did not occur. Non-selective oxidation reactions occurred under the conditions of pH 6.5 and 9.5 where radical chain reactions do occur, confirming indirectly the formation of hydroxyl radical. The decomposition efficiency of BPA by the added catalysts appeared in the order of $O_3$/PAC ${\geq}$ $O_3/H_2O_2$ > $O_3$/high pH > $O_3$ alone. 0.03~0.08 mM of hydrogen peroxide were continuously measured during the oxidation reactions of ozone/catalyst processes. In the case of $O_3$/high pH process, BPA was completely decomposed in 50 min of the oxidation reaction, but reaction intermediates formed by oxidation reaction were not oxidized sufficiently with 29% of the removal ratio for total organic carbon (TOC, selective oxidation reaction). In the case of $O_3/H_2O_2$ and $O_3$/PAC processes, BPA was completely decomposed in 40 min of the oxidation reaction, and reaction intermediates formed by the oxidation reaction were oxidized with 57% and 66% of removal ratios for TOC, respectively (non-selective oxidation reactions).

Effects of Working Pressure on Structural and Optical Properties of HfO2 Thin Films (공정 압력이 HfO2 박막의 구조적 및 광학적 특성에 미치는 영향)

  • Joung, Yang-Hee;Kang, Seong-Jun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.6
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    • pp.1019-1026
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    • 2017
  • The structural properties of $HfO_2$ films could be improved by calibrating the working pressure owing to the enhanced quality of a thin film. We deposited $HfO_2$ films on glass substrates by radio frequency (RF) magnetron sputtering under a base vacuum pressure lower than $4.5{\times}10^{-6}Pa$, RF power of 100 W, substrate temperature of $300^{\circ}C$. The working pressures were varied from 1 mTorr to 15 mTorr. Subsequently, their structural and optical properties were investigated. In particular, the $HfO_2$ film deposited at 1 mTorr had superior properties than the others, with a crystallite size of 10.27 nm, surface roughness of 1.173 nm, refractive index of 2.0937 at 550 nm, and 84.85 % transmittance at 550 nm. These results indicate that the $HfO_2$ film deposited at 1 mTorr is suitable for application in transparent electric devices.