• Korean Journal of Crystallography
• /
• v.18 no.1_2
• /
• pp.1-6
• /
• 2007

An Organometallic compound, $C_{16}H_{35}B_{10}IrS_2Si$, was synthesized from o-carborane, $Cp^*Ir(S_2C_2B{10}H_{10})$, and $Me_3SiCHN_2$. The molecular structure of this complex has been determined by X-ray diffraction. Crystallographic data : monoclinic, space group $P2_1/n$, $a=10.1986(12)\;{\AA}$, $b=14.834(5)\;{\AA}$, $c=17.139\;{\AA}$, ${\beta}=92.24(2)^{\circ}$, Z=4, $V=2591.0(14)\;{\AA}^3$. The structure was solved by direct methods and refined by full-matrix leat-squares methods to give a model with a reliability factor R=0.053 for 5080 reflections.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.2
• /
• pp.336-338
• /
• 2007

• Journal of the Korean Ceramic Society
• /
• v.28 no.8
• /
• pp.635-639
• /
• 1991

Monolithic gels in the ZrO2-SiO2 system containing up to 30 mol% ZrO2 were prepared from the mixed solutions of Zr(O.nC3H7)4 and partially prehydrolyzed Si(OC2H5)4 (Tetraethyl orthosilicate) by the sol-gel method. The effect of parameters such as the hydrolysis temperature, the amount of water and HCl on the hydrolysis condensation process was investigated and the obtained gels were studied by the IR spectra and TG-DTA. The results showed that the gelation time becomes shorter with increasing content of HCl, H2O and gelation temperature, and that the polymerization was more easily completed with the higher water volume causing the elimination of unreacted organic groups.

• Korean Journal of Materials Research
• /
• v.2 no.5
• /
• pp.353-359
• /
• 1992

Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.452-452
• /
• 2010

차세대 디스플레이로서 주목 받고 있는 유연성 정보표시 소자 개발에 대한 요구도가 날로 증대되고 있다. 유연성 정보표시 소자로서 플라스틱 기반 유연성 소자가 특히 주목 받고 있으나, 이의 실용화를 위해서는 플라스틱 기판에 적용 가능한 보호막 형성 기술 개발이 선행되어야 한다. 플라스틱 필름의 경우 높은 산소 및 수분 투과율 때문에 유연성 디스플레이의 응용에 걸림돌이 되고 있다. 플라스틱 기반 유연성 소자의 장수명화를 위해서는 수분과 산소의 투과를 방지하는 passivation layer 형성 기술이 필수적으로 요구된다. 본 연구에서는, polyethylene terephethalate (PET) 기판상에 증착된 $SiO_x$ 보호막의 합성에 있어서 중간층 유무에 따른 투습특성의 변화를 살펴보았다. 기화된 HMDSO (Hexamethyldisiloxane)와 Ar 및 $O_2$ 혼합기체를 이용하여 PECVD 방법으로 $SiO_x$ 박막을 합성하였다. 15 nm 두께의 $Al_2O_3$를 중간층으로 사용하여 중간층 유무에 따른 초기성장 거동 변화가 $SiO_x$ 박막의 투습 특성에 미치는 영향을 조사하였다. $SiO_x$ 박막 구조와 화학적 조성은 각각 FE-SEM과 FT-IR을 이용하여 분석하였으며, AFM을 이용하여 $SiO_x$ 박막 표면 미세 형상을 관찰하였다. 투습률은 MOCON사(社)의 Permatran-W 3/33 MA을 이용하여 측정하였다. 그리고 반복 굽힘 시험기를 이용하여 $SiO_x$ 보호막의 동적 투습 특성을 조사하였다. $Al_2O_3$ 중간층 유무에 따라 $SiO_x$ 박막의 투습률 (WVTR; water vapor transmission rate)은 ${\sim}10^{-1}g/m^2/day$(300 nm-thick $SiO_x$/PET)에서 ${\sim}5{\times}10^{-3}g/m^2/day$(300 nm-thick $SiO_x$/15 nm-thick $Al_2O_3$/PET)으로 변화하였다. 300 nm-thick $SiO_x$/15 nm-thick $Al_2O_3$/PET 시편의 경우 곡지름 50 mm에서 1,000회 반복 굽힘 후에도 투습률 변화를 보이지 않았다. 이와 같은 $SiO_x$ 박막의 투습 특성 변화는 $Al_2O_3$ 중간층 유무에 따른 초기 성장 거동의 변화로 해석된다. FE-SEM 및 AFM 표면 미세 구조 관찰을 통한 초기 성장 거동 변화 조사 결과, $Al_2O_3$ 중간층 없이 PET 기판위에 $SiO_x$ 박막 증착한 경우 3 차원 성장을 하는 반면, PET기판위에 $Al_2O_3$ 중간층 형성 후 $SiO_x$ 박막 증착하는 경우 2 차원 성장을 하게 됨을 관찰하였다. 따라서 본 연구를 통하여, 플라스틱 기반 유연성 표시 소자에 적용하기 위한 $SiO_x$ 보호막 합성 에 있어서 초기 성장 거동의 변화가 투습 특성에 민감한 영향을 미침을 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.14 no.1
• /
• pp.5-14
• /
• 1977

"Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.

• Journal of Powder Materials
• /
• v.8 no.3
• /
• pp.179-185
• /
• 2001

Through the observation of wear scar of two ceramic materials, microstructural wear mechanisms was investigated. As for the $Al_2O_3$-5 vol% SiC nanocomposite, the grain boundary fracture was suppressed by the presence of SiC nano-particles. The intragranular SiC particles have inhibited the extension of plastic deformation through the whole grain. Part of plastic deformation was accommodated around SiC particles, which made a cavity at the interface between SiC and matrix alumina. On the other hand, gas-pressure sintered silicon nitride showed extensive grain boundary fracture due to the thermal fatigue. The lamination of wear scar was initiated by the dissolution of grain boundary phase. These two extreme cases showed the importance of microstructures in wear behavior.

• Journal of the Korean Ceramic Society
• /
• v.37 no.6
• /
• pp.604-611
• /
• 2000

Glass-ceramics containing a cordierite (2MgO-2Al2O3-5SiO2) as a main crystal phase was prepared from MgO-Al2O3-SiO2 system glass through a controlled 2-step heat treatment for the application to magnetic memory disk substrate for higher storage capacity. Parent glasses prepared with addition of CeO2 as a fulx and TiO2 as a nucleating agent were crystallized by a 2-step heat treatment i.e. nucleation and crystal grwoth. Then the maximum nucleation and crystal growth rates were investigated and several properties such as bending strength, surface hardness and surface roughness were also studied for heat treated glass. As a result, only a $\alpha$-cordierite was precipitated as a main crystal phase for all heat treatment conditions and the maximum nucleation and crystal growth rates were 2.4$\times$109/㎣.hr at 80$0^{\circ}C$ and 0.3${\mu}{\textrm}{m}$/hr at 915$^{\circ}C$ respectively. After being nucleated at 80$0^{\circ}C$ for 5 hours and then crystallized at 915$^{\circ}C$ for 1 hour, the heat treated glass had a crystal volume fraction of 17.6% and crystal size fo 0.3${\mu}{\textrm}{m}$, and showed the optimum properties for the application to magnetic memory disk substrates as follows. ; Bending strength of 192 MPa, Vidkers hardness of 642.1kgf/$\textrm{mm}^2$, and surface roughness of 27$\AA$.

• The Bulletin of The Korean Astronomical Society
• /
• v.41 no.1
• /
• pp.43.1-43.1
• /
• 2016

With the Korean VLBI Network (KVN), both single dish and VLBI monitoring observations of H2O and SiO masers were performed toward the semi-regular variable star R Crateris. In the case of 11 VLBI monitoring observations from Jan. 5, 2014 to Jan. 7, 2016, successful superposed maps of H2O and SiO masers were obtained at 7 epochs by adopting the Source Frequency Phase Referencing (SFPR) method. These results enable us to investigate the development of outflow and asymmetric motions from SiO maser to H2O maser regions according to stellar pulsation which are closely related with a mass-loss process. Single dish monitoring observations of H2O and SiO masers were also carried out from 2009 June to 2016 Feb. Intensity variations between H2O and SiO masers were investigated according to stellar optical phases together with peak velocity variations with respect to the stellar velocity. We will compare the VLBI results among different maser transitions with those of single dish.

• Journal of the Korean Ceramic Society
• /
• v.26 no.3
• /
• pp.416-422
• /
• 1989

The particle size of synthesized SiC powders was decreased with increasing carbon content when the mixture of carbon and silica was carbonized at 1, 45$0^{\circ}C$ after hydrolysis of the mixture with the ranges of 3.1 to 3.5 in the mole ratio of Carbon/Alkoxide. The reacted fraction of $\beta$-SiC nearly had nothing to do with the mole ratio of Carbon/Alkoxide. When the reaction was made by adding 0.5wt% additives in the composition of 3.1 in the mole ratio of carbon/alkoxide, the additives decreased the yield of $\beta$-SiC and its sequence was Ba2O3>B>Fe>Al>Al2O3>Si. The effect of additives promoted the transformation of $\beta$-SiC to $\alpha$-SiC form and shwoed the increasing tendency of lattice constant. The two colors of $\beta$-SiC powder came out : one was the black grey with addition of Al, Al2O3 and B the other the light grey with addition of Fe, B2O3 and Si.