• Title/Summary/Keyword: ${Y_2}{SiO_5}$

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Simultaneous Observations of SiO and $H_2O$ Masers toward Known Stellar $H_2O$-only Maser Sources

  • Kim, Jae-Heon;Cho, Se-Hyung;Kim, Sang-Joon
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.145.2-145.2
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    • 2011
  • We present the results of simultaneous observations of SiO v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0, and $H_2O$ $6_{16}-5_{23}$ maser lines toward 152 known $H_2O$-only maser sources (the sources which are previously detected only in the 22 GHz $H_2O$ maser emission) using Yonsei and Tamna 21-m radio telescopes of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and $H_2O$ maser emission were detected from 62 sources giving a detection rate of 40.8 %. SiO-only maser emission was detected from 27 sources, while $H_2O$-only maser was detected from 22 sources. We have identified 19 new detections of SiO maser emission for previous non-detection sources and 51 new detections of SiO maser for previously not observed sources. Characteristics of all observed sources in the IRAS two-color diagram is investigated including their evolutionary sequence and mutual relations between SiO and $H_2O$ maser emission. These observational results will be useful for statistical study of asymptotic giant branch (AGB) stars and future VLBI observation.

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Structure of SrO-B2O3-Al2O3 and SrO-B2O3-SiO2 glasses Using 11B Nuclear Magnetic Resonance (11B NMR 방법에 의한 SrO-B2O3-Al2O3와 SrO-B2O3-SiO2 유리들의 구조에 관한 연구)

  • Moon, Seong-Jun
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.19-25
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    • 2002
  • Ternary $xSrO-yB_2O_3-0.1Al_2O_3$ and $xSrO-yB_2O_3-0.1SiO_2$ glasses were prepared as a function of R(${\equiv}x/y$). The fraction of four-coordinated brans ($N_4$), symmetric three-coordinated barons ($N_{3S}$), and asymmetric three-coordinated barons ($N_{3A}$) were determined quantitatively to study the structures of these glasses by $^{11}B$ NMR. The values of $Q_{cc}$ and ${\eta}$ for $BO_3$ unit in the glasses were 2.74MHz and 0.22, those for $BO_3{^-}$ unit were 2.54MHz and 0.55, and those for $BO_4$ unit 0.60~0.75MHz and 0.00, respectively. The structure of SrBAl glass at $R_{1st}$ consisted of tetraborate ($[B_8O_{13}]^{-2}$) units and 1st-modified diborate ($[B_2Al_2O_7]^{-2}$) units, and those for the glass at $R_{max}$consisted of diborate ($[B_4O_7]^{-2}$) units, metaborate ($[BO_2^{-1}]$), 1st-modified diborate units, and 2nd-modified diborate ($[B_2Al_2O_8]^{-4}$) units. Due to the oxygens introduced from the strontium oxide. $AlO_4$ units were preferably formed rather than $BO_4$ units. And, the structure of SrBSi glasses in the region $R{\leq}0.5$ could be viewed as binary $SrO-B_2O_3$ glasses structure diluted by silicate oxide: therefore, the Si atoms of the glasses did not contributed to the change the configuration around the boron atoms. The silicate oxide was formed the $SiO_4{^-}$ units rather than the $BO_3{^-}$ units by the oxygens introduced from the storntium oxide in the region of $R{\geq}R_{max}$, and structure of those glass at $R_{max}$ consisted of diborate units, metaborate units loose $BO_4([BO_2]^{-1})$, and $SiO_4{^-}([SiO_{2.5}]^{-1})$ units.

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Fabrication of Semiconductor-Insulator-Semiconductor Solar Cells and their Characteristics (SIS 태양전지의 제조 및 그 특성)

  • Kim, Jin-Seop;Lee, Deok-Dong;Lee, U-Il
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.18 no.4
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    • pp.21-26
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    • 1981
  • SnO2/n-Si and ITO/n-Si SIS solar cells have been fabricated ty mears of electron-beam deposition. The optimum oxidation and heat-treatment condition for SnO2/n-Si cells and ITO/n-Si cells are 50$0^{\circ}C$-5min., 30$0^{\circ}C$-10min., and 50$0^{\circ}C$-5min., 30$0^{\circ}C$-20min. respectively. The open-circuit Voltage(Voc), short-circuit current density(Jsc), fill factor(FF), and efficiency (η) under AMI(100mW/$\textrm{cm}^2$) illumination were 0.4V, 34mA/$\textrm{cm}^2$, 0.44, and 6.0%(active area efficiency, 6.9%) for SnO2/n-Si solar cells, and 0.44V, 36mA/$\textrm{cm}^2$, 0.53, and 8.45%(active area efficiency, 9.71%) for ITO/n-Si solar calls.

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The interfacial properties of th eanneled SiO$_{2}$/TiW structure (열처리된 SiO$_{2}$/TiW 구조의 계면 특성)

  • 이재성;박형호;이정희;이용현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.117-125
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    • 1996
  • The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

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Dielectric passivation effects on the electromigration phenomena in Al-1%Si thin film interconnections (A1-1%Si 박막배선에서 엘렉트로마이그레이션 현상에 미치는 절연보호막 효과)

  • 김경수;김진영
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.27-30
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    • 2001
  • Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

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Preparation of $Li_2O-ZrO_2-P_2O_5-SiO_2$ based Glassy Solid Electrolytes by Sol-Gel Process and Their Ionic Conduction (솔-젤법에 의한 $Li_2O-ZrO_2-P_2O_5-SiO_2$계 유리 고체전해질의 제조와 그의 이온전도성)

  • 박강석;김기원;강은태
    • Journal of the Korean Ceramic Society
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    • v.31 no.6
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    • pp.660-670
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    • 1994
  • Transparent, crack-free dried gel monoliths with a composition of LiZr1.5Si2P2O12.5 have been synthesized by the low temperature polymerization of the Sol-Gel technique using metal alkoxides as starting materials. After initial reaction (20~40 min), each metal alkoxide closely paralleled each other during the hydrolysis reactions. The safe drying conditions of gels with no creaks the control of the shrinkage rate. The gels converted into the glass by heat treatment at 75$0^{\circ}C$. FTIR data indicated that the gels were phase separated into silicarich and phosphate-rich regions with the lithium. XRD results showed the formation of crystalline LiH2PO4. The gels dried at 15$0^{\circ}C$ or fired at 75$0^{\circ}C$ contained the residual water. The high ionic conductivity at room temperature for these gels was attributed to the motion of protons.

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Purification of Iron Oxides and Application to Magnetic Hard Ferrite

  • Kim, Jeong-Seog;Chou, Kyoung-Ho;Kim, Jai-Young
    • The Korean Journal of Ceramics
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    • v.2 no.3
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    • pp.125-130
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    • 1996
  • Hematite iron ore and waste iron oxide sludge containing about 3-5 wt% $SiO_2$ were purified by three types of method developed on the basis of the Bayer process which is known as the purification process of bauxite ore. The basic principle of the developed methods lies in the fact that the impurities contained in the iron oxides, such as $SiO_2$ and $Al_2O_3$ are soluble in the alkaline reagents. Reaction of the raw materials with KOH was done in pressure vessel, at atmospheric pressure, and by both of these two. By the pressure vessel method $SiO_2$ content was reduced to below 0.5 wt% in the waste iron oxide sludge, while, in iron ore, $SiO_2$ remained at 2-3 wt%. The atmospheric pressure reaction rendered the waste iron oxide sludge $SiO_2$ content below 0.5wt% when the reaction temperature increased to above 90$0^{\circ}C$. The combined method of two previous methods was the most effective process and rendered the refined iron oxide about 300-400ppm of $SiO_2$. Using some refined iron oxides, Ba-ferrite was produced and magnetic properties were measured. The highest quality of magnetic properties obtained in this study were Br=2.09 G, bHc=1.99 KOe, iHc=4.54 KOe, $(BH)_{max}$=1.06 MGOe. Effect of sintering condition and chemical composition will be discussed.

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Effect of $Al_2O_3$ on Hot-Press of ${\alpha}-SiC$ and Mechanical Properties (알루미나의 첨가가 ${\alpha}-SiC$의 가압소결 및 기계적 성질에 미치는 영향)

  • 이수영;고재웅;김해두
    • Journal of the Korean Ceramic Society
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    • v.28 no.7
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    • pp.561-567
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    • 1991
  • Submicron ${\alpha}-SiC$ powder with $Al_2O_3$ addition was hot-pressed under the controlled heating and pressurizing schedule. $SiO_2$ layer on ${\alpha}-SiC$ powder was effective for the sintering of ${\alpha}-SiC$ powder when $Al_2O_3$ was used as an additive. Applying of pressure under the controlled schedule accelerated the rearrangment of SiC grains, yielding 98% of theoretical density of SiC even at $1900^{\circ}C$. Flexural strength of the specimen containing 2 wt% $Al_2O_3$ was increased as increasing the hot-pressing temperature up to $2050^{\circ}C$ and maximum value was 800 MPa, while the flexural strength of the specimen containing 10 wt% $Al_2O_3$ was decreased as increasing the hot-pressing temperature above $2000^{\circ}C$ due to the formation of continuous grain boundary phase. Fracture toughness of the specimens was in the range of $3.5~4.5\;MNm^{-3/2}$ regardless of the amount of $Al_2O_3$ addition.

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CaxSr2-xSiO4:Eu2+ Green-emitting Nano Phosphor for Ultraviolet Light Emitting Diodes

  • Kim, Jong Min;Choi, Hyung Wook
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.249-252
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    • 2014
  • The aim of this work is to investigate the effect of $Ca_xSr_{2-x}$ and activator on the structural and luminescent properties of green-emitting $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ nano phosphor. Using urea as fuel and ammonium nitrate as oxidizer, $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ has been successfully synthesized, using a combustion method. The particles were found to be small, spherical and of round surface. SEM imagery showed that the phosphors particles are of nanosize. The $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ emission spectrum for 360 nm excitation showed a single band, with a peak at 490 nm, which is a green emission. The highest luminous intensity was at $1,000^{\circ}C$, which was obtained when the $Eu^{2+}$ content (y) was 0.05. The results support the application of $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs). Characteristics of the synthesized $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and photoluminescence (PL) detection.

Preparation of TiO2-SiO2 Powder by Modified Sol-Gel Method and their Photocatalytic Activities (수식 졸-겔법에 의한 TiO2-SiO2분체합성 및 광촉매활성)

  • Kim, Byung-Kwan;Mizuno, Noritaka;Yasui, Itaru
    • Applied Chemistry for Engineering
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    • v.7 no.6
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    • pp.1034-1042
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    • 1996
  • Various $TiO_2-SiO_2$ composite powders were prepared by the modified sol-gel method using 1-dodecanol as DCCA (Dryng Control Chemical Additive ). Their characterizations were carried out and their photocatalytic catalysis was examined on the evolution reaction of hydrogen. The weight losses at $500^{\circ}C$ of only $TiO_2$ and $SiO_2$ powders were 33. 0wt% and 42.5wt%, respectively, and those of the $TiO_2/SiO_2$ powders ($TiO_2/SiO_2=25/75$, 50/50 and 75/25) were about $70.0{\pm}3.0wt%$. The released substances from the powders were almost organic matters. The as-prepared powders except only $TiO_2$ powder were amorphous. Transformation of anatase to rutil was hindered by $SiO_2$ component and the crystallinity of anatase was decreased with increasing $SiO_2$ contents. The as-prepared powders were bulky states. By heating at $600^{\circ}C$ for 1 hr $TiO_2-SiO_2$ powders ($TiO_2=100%$, $TiO_2/SiO_2=75/25,\;50/50$) showed agglomerates consisted of particles in submicron, but those of $TiO_2/SiO_2=25/75$ and $SiO_2=100%$ were still bulky states. Specific surface area of the powders heat-treated at $600^{\circ}C$ for 1hr was increased with $SiO_2$ concents and their pore sizes were also depended on $SiO_2$ contents. The photocatalytic activity of $TiO_2/SiO_2=75/25$ heat-treated at $600^{\circ}C$ for 1hr was 0.240mo1/h.g-cat as $H_2$ evolution rate. This value was about 2.0 times that of P-25(Degussa P-25) as a standard photocatalyst.

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