• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.889-892
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• 2000

We have investigated the Pt doping effect on structural and electrochemical properties of amorphous vanadium oxide film, grown by radio frequency magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction (GXRD) and high resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with l0W r.f. power induce more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt increases, large amount of Pt incorporates into amorphous V$_2$O$_{5}$ and makes PtOx microcrystalline phase in amorphous matrix. This result suggests that the semicondcuting PtOx microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibility of vanadium oxide cathode film.de film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.751-757
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• 2000

The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.539-545
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• 2021

The effect of Sm₂O₃ doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm₂O₃ results in better densification (from 5.70 to 5.82 g/cm³) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm₂O₃ increases. The doping of Sm₂O₃ remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm² in the leakage current density). Meanwhile, the doping of Sm₂O₃ reduces the donor concentration (the range of 2.73 × 10¹⁸ to 1.18 × 10¹⁸ cm^-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 10¹² to 4.08 × 10¹² cm^-2 with the increase of doping content of Sm₂O₃. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm₂O₃.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1241-1242
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• 2006

Electromagnetic properties of $CeO_2$ doped and undoped YBaCuO superconductors were evaluated to investigate the effect of pinning center on the magnetization and magnetic shielding. The variation $\DeltaM$ with doping was maximum for 3% doping and decrease with further doping. The magnetic shielding was evaluated by measuring the induced voltage in secondary coil and the voltage initially set to 0.5V, decreased to 0.17V and 0.28V respectively for the undoped and 3% $CeO_2$ doped sample. The much less change in the induced voltage for the 3% doped sample is attributed to the increased flux shielding by shielding vortex current. The $CeO_2$ was converted to fine $BaCeO_3$ particles which were trapped in YBaCuO superconductor during the reaction sintering. The trapped fine particles, $BaCeO_3$ may be acted as a flux pinning center.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.491-495
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• 2005

Vanadium pentoxide xerogels with a doping ratio of $Al/V_2O_5$ ranging from 0.01 to 0.05 were synthesized by doping Al into $V_2O_5$ xerogel via the sol-gel process. By using the synthesized $Al_xV_2O_5$, the $Li/Al_xV_2O_5$ cells were assembled to investigate the chemical and electrochemical properties. Surface morphology of the $Al_xV_2O_5$ xerogel showed an anisotropic corrugated sheet-like matrix, and the interlayer distance was about $11.5{\AA}$. The IR spectra of the $Al_xV_2O_5$ revealed that the doped Al was coordinated to the vanadyl group in $V_2O_5$. The $Al_xV_2O_5$ xerogels showed enhanced reversibility and energy density compared with the $V_2O_5$ xerogel. The specific capacity of the $Al_{0.05}V_2O_5$ xerogel was more than 200 mAh/g at 10 mA/g discharge rate, and cycle efficiency was about 90% after the 31st cycling test between 1.9 V and 3.9 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.87-87
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• 2001

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.529-535
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• 1990

This paper describes the factors which control the impedance-relative humidity characteristics of the TiO2-V2O5 humidity sensor. To obtain the quantitative relationships between impedance and many manufacturing parameters such as V2O5mol%, the sintering time and temperature, various sets of samples are preared and tested. With changing relative hymidity from 20% to 80%, it is measrued that the corresponding capacitance and impedance from the semicircles which complex impedance plots make. As a result we found that the impedance-relative humidity characteristics are mainly controlled by the doping amount of V2O5 total pore volume and bulk resistence of the elements. We can assume the equivalent circuits of each samples and finally control the sintering time to get a linear humidity impedance response curve which plays an important role in device making. 4mol% V2O5-TiO2 specimen sintered at 90$0^{\circ}C$ for 10min. show liear log(Z) vs. RH characteristics and 10mol% V2O5-TiO2 specimen sintered at the same temp. for 20min. show linear (Z) vs. RH.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.