• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.236-239
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• 1999

This paper is the study for electrical characteristic of PZT ceramics with Sb$_2$O$_3$, CoO additive. Effect of Sb$_2$O$_3$, CoO additive ranged from 0.0 wt% to 1.2wt% on the electrical characteristic of the PZT ceramics have been investigated. In the case of Sb$_2$O$_3$ 0.6wt%, the maximum vague of mechanical quality factor(Qm) was obtained 124.11 at l15$0^{\circ}C$. And, additive CoO 1.2wt% was obtained 184.12 at l15$0^{\circ}C$. The electromechanical coupling factor(kp) was increased by increasing the amount of Sb$_2$O$_3$, CoO additive. The maximum value of electromechanical coupling factor(kp) was obtained 58.35 with Sb$_2$O$_3$1.2wt% additive at l15$0^{\circ}C$. Dopped with additive CoO 0.9wt%, electromechanical coupling factor(kp) was obtained 47.84 at 115$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.17 no.2
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• pp.75-79
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• 1980

The effect of the additive on the dielectric property of $TiO_2$ containing 0-2.5wt %. $Sb_2O_3$ was investigated as a function of frequency from $5{\times}10^4$ to $6.3{\times}10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant increased with increasing $Sb_2O_3$ concentration from 0.25 to 0.5wt.% It is due to space charge polarization caused by increasing anion vacanices. The dielectric constant decreased for further increase in $Sb_2O_3$ concentration. It can be explained by increasing grain size effect rather than space charge polarization.

• Journal of the Korean Ceramic Society
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• v.51 no.1
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• pp.43-50
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• 2014

We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1323-1330
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• 1995

The effects of various additives on the microstructures of sintered ZnO varistors were examined. Bi2O3, Sb2O3 and Cr2O3 were added to ZnO step by step to identify the effect of each component. The specimens were prepared by sintering at 110$0^{\circ}C$ and 120$0^{\circ}C$ in ambient atmosphere. In ZnO-Bi2O3-Sb2O3 ternary system, decrease of averge grain size due to antimony oxide addition depends on sintering temperature as well as Bi2O3 content. When Sb2O3 was partly or completely replaced by Cr2O3, grain size was further reduced. A significant amount of pyrochlore phase which was not transformed to spinel and Bi2O3-rich liquid phase seemed to remain during sintering at 110$0^{\circ}C$. Unlike ZnO-Bi2O3-Sb2O3 system, the $\alpha$-spinel phase containing significant amount of Cr did not transform to pyrochlore during furnace cooling. Fine spinel particles around 1${\mu}{\textrm}{m}$ size were ovserved within ZnO grains and grain boundaries, which were believed to be responsible for grain-growth inhibition in ZnO-Bi2O3-Sb2O3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.5 no.2
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• pp.58-66
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• 1991

This paper measured the characteristic of the thermal expansion, dielectric and conductivity to use $Sb_2O_3$ Filler in epoxy resin.The results are summarized as follow : 1 ) In the [$155^{\circ}C$] 1, The coefficient of thermal expansion increasing temperature obtained 8.19 in the case of pure epoxy resin and $4.5{\times}10^{-5}$ in the case of the mixing 7[%].2) The peak point of $\varepsilon\iota, \varepsilon\rho$ increasing $Sb_2O_3$ mixing ratio moved on the part of the high temperature. 3) The conductivity value increasing temperature shows the corner on the part of the Tg and it's Value became low the sample material with mixing I[%] than in case of pure epoxy resin.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.419-423
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• 2007

The behavior of oxygen gas participating in fining was observed in CRT (Cathode Ray Tube) glass melts doped with $Sb_2O_5\;or\;CeO_2$ by means of a yttria-stabilized zirconia (YSZ) electrode. The temperature dependence of the oxygen equilibrium pressure ($P_{o2}$) or the activity in both melts showed typical behavior corresponding to a theoretical redox reaction. In other words, the $P_{o2}$ value of melts with $CeO_2$ was lower than that of melts with $Sb_2O_5$ above $1250^{\circ}C$. The result implies that $Sb_2O_5$, is more efficient as a fining agent compared to $CeO_2$. On the other hand, melts from a batch containing $Sb_2O_5\;and\;KNO_3$ showed much higher $P_{o2}$ values compared to melts without $KNO_3$ above $1350^{\circ}C$. It is suggested that the addition of $KNO_3$ to CRT glass batch contributes partly to the first fining of the melts.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.220-228
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• 1991

본 연구에서는 핫프레스법으로 제작된 0.05Pb(Sn$_{1}$2/Sb$_{1}$2/)O$_{3}$-0.60PbZrO$_{3}$-0.35PbTiO$_{3}$+x[wt%]MnO$_{2}$ 세라믹스에 대해 구조적, 전기적 특성 및 탄성 표면파 특성을 조사하였다. x가 0.4인 조성을 1150[.deg.C]에서 45분간 소성한 시편의 경우 탄성표명파의 전기 기계 결합 계수 k$_{s}$ $^{2}$가 2.8[%], 기계적 품질 계수 Q$_{m}$ 이 1976으로 탄성 표면파 소자용 기판으로서 응용 가능함을 보였다.