• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.228-232
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• 2006

In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25\;wt\%\;CaCO_3$ and $0.2\;wt\%\;Li_{2}CO_3$ as sintering aids were manufactured according to the variation of poling field. The specimens could be sintered at $930\;^{\circ}C$. The piezoelectric properties were investigated according to the poling field. The maximum properties showed at the field of 6.5 kV/mm, which had kt of 0.49, Qmt of 1816, and $d_{33}$ of 81.4 pC/N.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.176-177
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• 2005

In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25wt%CaCO_3$ and 0.2wt%$Li_2CO_3$ as sintering aids were manufactured according to the variation of poling field. Specimens could be sintered at the sintering temperature of $930^{\circ}C$. The piezoelectric properties increased according to the increase of poling field and showed the maximum values (kt=0.49, Qmt=1816, and $d_{33}$=81.4pC/N) under 6.5kV/mm.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.386-393
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• 2002

Fabricatio of the potassium-titanate fiber with K2O${\cdot}nTiO_2$ composition and coating of electrically conductive Sb-doped $SnO_2$ (ATO: Antimony Tin Oxide) layer on the fiber on the fiber were the fiber were the aims of this work. The fiber fabricated by slow-cooling technique showed the mean length of $15{\mu}m$ and mean diameter of $0.5{\mu}m$. Three different coating methods i.e, sol-gel, co-precipitation and urea technique, were attempted to coat the conductive ATO layer on the potassium-titanate fiber. The influences of coating method, concentrations of ATO(5∼70wt%) and Sb (0∼20wt%), temperature in the range of $450\;to\;800^{\circ}C$, number of washing (3∼4 times) on the resistivity of the ATO coated fiber were examined in details. The fiber coated ATO by coprecipitation exhibited lower resistivity of 103${\Omega}{\cdot}$cm at the 30 wt% of ATO, and showed nearly constant low value of $60{\Omega}{\cdot}cm\;to\;90{\Omega}{\cdot}$cm at the higher concentration of ATO.

• Proceedings of the KIEE Conference
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• 1983.07a
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• pp.225-226
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• 1983

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.489-494
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• 2009

In this study, In order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics, $0.95(K_{0.5}Na_{0.5})NbO_3-0.05Li(Sb_{0.8}Nb_{0.2})O_3+0.2\;wt%Ag_2O+0.4\;wt%MnO_2+Xwt%CuO$ were investigated as a function of the amount of CuO addition. With increasing the amount of CuO addition, density was increased up to 0.4 wt.% CuO and then decreased above. And also, electro mechanical coupling factor ($k_p$) was decreased. At the 0.4 wt% CuO added specimen sintered at $1020^{\circ}C$, $k_p$, Qm, density, dielectric constant (${\varepsilon}_r$) and $d_{33}$[pC/N] showed the optimal value of $4.37\;g/cm^3$, 0.354, 305, 645, and 144 pC/N respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.1
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• pp.390-395
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• 2011

In order to develope piezoelectric transformer for the ballast of fluorescent lamp, the composition of piezoelectric ceramics was 0.95Pb($Zr_xTi_{1-x}$)O3+yPb($Mn_{1/3}Nb_{2/3}$)$O_3$+(0.05-y)Pb($Sb_{1/2}Nb_{1/2}$)$O_3$. PMN compound was selected to improve mechanical quality factor and PSN to prevent the decrease of dielectric constant and electromechanical coupling coefficient. Dielectric and piezoelectric characteristics in the region of MPB of 0.95Pb($Zr_xTi_{1-x}$)$O_3$+yPb($Mn_{1/3}Nb_{2/3}$)$O_3$+(0.05-y)Pb($Sb_{1/2}Nb_{1/2}$)$O_3$ ceramics was discussed both quantatively and qualitatively.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.150-154
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• 2019

This study investigates the effect of MnO2 and CuO as acceptor additives on the microstructure and piezoelectric properties of $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$, which has a rhombohedral-tetragonal phase boundary composition. $MnO_2$ and CuO-added $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$ ceramics sintered at a relatively low temperature of $1020^{\circ}C$ show a pure perovskite phase with no secondary phase. As the addition of $MnO_2$ and CuO increases, the sintered density and grain size of the resulting ceramics increases. Due to the difference in the amount of oxygen vacancies produced by B-site substitution, Cu ion doping is more effective for uniform grain growth than Mn ion doping. The formation of oxygen vacancies due to B-site substitution of Cu or Mn ions results in a hardening effect via ferroelectric domain pinning, leading to a reduction in the piezoelectric charge coefficient and improvement of the mechanical quality factor. For the same amount of additive, the addition of CuO is more advantageous for obtaining a high mechanical quality factor than the addition of $MnO_2$.

• Analytical Science and Technology
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• v.34 no.1
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• pp.17-22
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• 2021

In this study, flame retardant mixtures of decabromodiphenylethane (DBDPE) and Sb2O3 were analyzed using Fourier transform infrared (FT-IR) spectroscopy. The experimentally obtained wavenumbers of DBDPE and Sb2O3 were 1321 and 949 cm-1, respectively, whereas those obtained by theoretical calculation were 1370 and 818 cm-1, respectively. Strong correlation was observed between the mixing molar ratios and observed peak area ratios, suggesting that FT-IR analysis can be used to obtain relative amounts of the individual components of flame retardant mixture.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.165-171
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• 2020

The electrochemical preparation and spectroscopic characterisation of iridium-antimony (Ir-Sb) species is important owing to their potential applications as nanostructure materials. Nanostructures, i.e. nanoflower and nanodisk, of Ir-Sb were electrodeposited on conductive substrates using a practical electrochemical method based on the simultaneous underpotential deposition (UPD) of Ir and Sb from the IrCl₃ and Sb₂O₃ at a constant potential. Electrochemical UPD mechanism of Ir-Sb was studied using cyclic voltammetry and potential-controlled electrochemical deposition techniques. Herein, X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, X-ray photoelectron and Raman spectroscopy were used to determine the morphological and structural properties of the electrochemically-synthesised Ir-Sb nanostructures.