• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.236-239
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• 1999

This paper is the study for electrical characteristic of PZT ceramics with Sb$_2$O$_3$, CoO additive. Effect of Sb$_2$O$_3$, CoO additive ranged from 0.0 wt% to 1.2wt% on the electrical characteristic of the PZT ceramics have been investigated. In the case of Sb$_2$O$_3$ 0.6wt%, the maximum vague of mechanical quality factor(Qm) was obtained 124.11 at l15$0^{\circ}C$. And, additive CoO 1.2wt% was obtained 184.12 at l15$0^{\circ}C$. The electromechanical coupling factor(kp) was increased by increasing the amount of Sb$_2$O$_3$, CoO additive. The maximum value of electromechanical coupling factor(kp) was obtained 58.35 with Sb$_2$O$_3$1.2wt% additive at l15$0^{\circ}C$. Dopped with additive CoO 0.9wt%, electromechanical coupling factor(kp) was obtained 47.84 at 115$0^{\circ}C$.

• 한국세라믹학회지
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• 제17권2호
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• pp.75-79
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• 1980

The effect of the additive on the dielectric property of $TiO_2$ containing 0-2.5wt %. $Sb_2O_3$ was investigated as a function of frequency from $5{\times}10^4$ to $6.3{\times}10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant increased with increasing $Sb_2O_3$ concentration from 0.25 to 0.5wt.% It is due to space charge polarization caused by increasing anion vacanices. The dielectric constant decreased for further increase in $Sb_2O_3$ concentration. It can be explained by increasing grain size effect rather than space charge polarization.

• 한국세라믹학회지
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• 제51권1호
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• pp.43-50
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• 2014

We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.

• 한국세라믹학회지
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• 제32권12호
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• pp.1323-1330
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• 1995

The effects of various additives on the microstructures of sintered ZnO varistors were examined. Bi2O3, Sb2O3 and Cr2O3 were added to ZnO step by step to identify the effect of each component. The specimens were prepared by sintering at 110$0^{\circ}C$ and 120$0^{\circ}C$ in ambient atmosphere. In ZnO-Bi2O3-Sb2O3 ternary system, decrease of averge grain size due to antimony oxide addition depends on sintering temperature as well as Bi2O3 content. When Sb2O3 was partly or completely replaced by Cr2O3, grain size was further reduced. A significant amount of pyrochlore phase which was not transformed to spinel and Bi2O3-rich liquid phase seemed to remain during sintering at 110$0^{\circ}C$. Unlike ZnO-Bi2O3-Sb2O3 system, the $\alpha$-spinel phase containing significant amount of Cr did not transform to pyrochlore during furnace cooling. Fine spinel particles around 1${\mu}{\textrm}{m}$ size were ovserved within ZnO grains and grain boundaries, which were believed to be responsible for grain-growth inhibition in ZnO-Bi2O3-Sb2O3.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• 한국조명전기설비학회지:조명전기설비
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• 제5권2호
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• pp.58-66
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• 1991

본 논문은 내열성 에폭시수지를 개발하기 위하여 에폭시수지에 $Sb_2O_3$를 첨가한 시편의 열팽창, 유전 및 도전특성을 측정하여 다음과 같은 결론을 얻었다. 1)[$155^{\circ}C$]이하에서의 온도증가에 따른 열팽창 계수는 순수 에폭시수지가 $8.19{\times}10^{-5}$ 인데 비해 7[%] 혼합한 경우에는$4.5{\times}10^{-5}$ 이었다. 2)$Sb_2O_3$의 혼합율에 따른 $\varepsilon\iota, \varepsilon\rho$의 온도의존성은 1[kHz]에서 순수에폭시수지는 [$155^{\circ}C$]근방에서 피크점을 보이고 있으나 $Sb_2O_3$의 혼합율이 증가함에 따라 피크점은 고온으로 옮아간다. 3) 전기전도로는 유리전이온도근방에서 변곡되는 두 개의 직선적인 특성을 나타내며 1[%] 혼합한 경우에는 순수에폭시 수지에 비해 낮은 값을 나타낸다.

• 한국세라믹학회지
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• 제44권8호
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• pp.419-423
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• 2007

The behavior of oxygen gas participating in fining was observed in CRT (Cathode Ray Tube) glass melts doped with $Sb_2O_5\;or\;CeO_2$ by means of a yttria-stabilized zirconia (YSZ) electrode. The temperature dependence of the oxygen equilibrium pressure ($P_{o2}$) or the activity in both melts showed typical behavior corresponding to a theoretical redox reaction. In other words, the $P_{o2}$ value of melts with $CeO_2$ was lower than that of melts with $Sb_2O_5$ above $1250^{\circ}C$. The result implies that $Sb_2O_5$, is more efficient as a fining agent compared to $CeO_2$. On the other hand, melts from a batch containing $Sb_2O_5\;and\;KNO_3$ showed much higher $P_{o2}$ values compared to melts without $KNO_3$ above $1350^{\circ}C$. It is suggested that the addition of $KNO_3$ to CRT glass batch contributes partly to the first fining of the melts.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• 한국광학회지
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• 제13권3호
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• pp.215-222
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• 2002

광기록매체용 Ge-Sb-Te다층박막 성장과정을 in-situ 타원계를 사용하여 실시간으로 모니터하여 각 층의 두께를 제어하고 성장된 Ge-Sb-Te 다층박막을 ex-site 분광타원법으로 확인하였다. 보호층인 ZnS-SiO$_2$와 기록층인 Ge$_2$Sb$_2$Te$_{5}$을 단결정실리콘 기층 위에 스퍼터링 방법으로 각각 성장시키면서 구한 타원상수 성장곡선을 분석하여 성장에 따르는 보호층의 균일성 및 기록 층의 밀도변화를 파악하고 이를 기초로 하여 Ge-Sb-Te광기록 다층박막의 두께를 정밀하게 제어하였다. Ge$_2$Sb$_2$Te$_{5}$ 단층박막 시료의 복소굴절율은 eX-Situ 분광타원분석을 통하여 구하였다. 제작된 다층구조는 설정된 다층구조인 ZnS-SiO$_2$(1400$\AA$)$\mid$ GST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$)와 각 층의 두께 및 전체 두께에서 1.5% 이내에서 일치하는 정확도를 보여주었다.주었다.

• E2M - 전기 전자와 첨단 소재
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• 제4권3호
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• pp.220-228
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• 1991

본 연구에서는 핫프레스법으로 제작된 0.05Pb(Sn$_{1}$2/Sb$_{1}$2/)O$_{3}$-0.60PbZrO$_{3}$-0.35PbTiO$_{3}$+x[wt%]MnO$_{2}$ 세라믹스에 대해 구조적, 전기적 특성 및 탄성 표면파 특성을 조사하였다. x가 0.4인 조성을 1150[.deg.C]에서 45분간 소성한 시편의 경우 탄성표명파의 전기 기계 결합 계수 k$_{s}$ $^{2}$가 2.8[%], 기계적 품질 계수 Q$_{m}$ 이 1976으로 탄성 표면파 소자용 기판으로서 응용 가능함을 보였다.