• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.145-147
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• 2000

The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

• Journal of Astronomy and Space Sciences
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• v.33 no.2
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• pp.109-117
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• 2016

We explain the results of Yu et al. (2015b) of the novel sharpness angle measurement to a large number of spectra obtained from the Fermi gamma-ray burst monitor. The sharpness angle is compared to the values obtained from various representative emission models: blackbody, single-electron synchrotron, synchrotron emission from a Maxwellian or power-law electron distribution. It is found that more than 91% of the high temporally and spectrally resolved spectra are inconsistent with any kind of optically thin synchrotron emission model alone. It is also found that the limiting case, a single temperature Maxwellian synchrotron function, can only contribute up to 58⁺²³₋₁₈% of the peak flux. These results show that even the sharpest but non-realistic case, the single-electron synchrotron function, cannot explain a large fraction of the observed spectra. Since any combination of physically possible synchrotron spectra added together will always further broaden the spectrum, emission mechanisms other than optically thin synchrotron radiation are likely required in a full explanation of the spectral peaks or breaks of the GRB prompt emission phase.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.44-47
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• 2002

DV(Discrete Variation)-X${\alpha}$ cluster calculation was employed to calculate the electronic states of ${\gamma}'- Fe_4N$ which was one of iron nitride phases synthesized from plasma ion nitriding to improve surface hardness and wear resistance. The result of calculated electron density of states for Fe was similar to the result of band calculation. The cluster used for calculation of electronic states of ${\gamma}'-Fe_4N$ was based on $Fe_{14}N$ cluster which comprises 15 atoms. Finally the electronic states of ${\gamma}'- Fe_4N$ such as net-charge, band order, energy level, electron wave-function, and contour map for electron density were derived by the calculation.

• Journal of Photoscience
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• v.10 no.1
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• pp.9-20
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• 2003

Recent studies on the photoreactivity of l,4-unsaturated systems have changed some ideas that were firmly established in this area of research for many years. Thus, we have described the first examples of 2-aza-di-$\pi$-methane (2-ADPM) rearrangements promoted by triplet-sensitization and by single electron transfer (SET) using electron-acceptor sensitizers. These reactions afford N-vinylaziridine and cyclopropylimine photoproducts in the first examples of di-$\pi$-methane processes that yield three-membered ring heterocycles. l-Aza-1,4-dienes also undergo SET-promoted l-aza-di-$\pi$-methane (l-ADPM) rearrangements via radical-cation intermediates using electron acceptor sensitizers. In some cases, alternative cyclizations yielding different carbocycles and heterocycles have been observed. The l-ADPM and di-$\pi$-methane (DPM) reactions also occur via radical-anion intermediates on irradiation using electron donor sensitizers. On the other hand, the photoreactivity reported for $\beta$,${\gamma}$-unsaturated aldehydes for many years was decarbonylation to the corresponding alkenes. However, our studies demonstrate that these compounds undergo the oxa-di-$\pi$-methane (ODPM) rearrangement with high chemical and quantum efficiency. A comparison of the photochemical reactivity of $\beta$,${\gamma}$-unsaturated aldehydes and corresponding methyl ketones has shown that the ketones do not undergo the ODPM rearrangement while the corresponding aldehydes are reactive by this pathway. Monosubstituted $\beta$,${\gamma}$-unsaturated aldehydes at C-2 undergo the ODPM rearrangement yielding the corresponding cyclopropane carbaldehydes diastereoselectively. Finally, we have described the first examples of reactions, similar to the well know Norrish Type I process, which take place in the triplet excited state of $\beta$,${\gamma}$-unsaturated carbonyl compounds by excitation of the C-C double bond instead of the carbonyl group.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Journal of Radiation Protection and Research
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• v.39 no.2
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• pp.81-88
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• 2014

Recently, a new imaging method, gamma vertex imaging (GVI), was proposed for the verification of in-vivo proton dose distribution. In GVI, the vertices of prompt gammas generated by proton induced nuclear interaction were determined by tracking the Compton-recoiled electrons. The GVI system is composed of a beryllium electron converter for converting gamma to electron, two double-sided silicon strip detectors (DSSDs) for the electron tracking, and a scintillation detector for the energy determination of the electron. In the present study, the modules of a charge sensitive preamplifier (CSP) and a shaping amplifier for the analog signal processing of DSSD were developed and the performances were evaluated by comparing the energy resolutions with those of the commercial products. Based on the results, it was confirmed that the energy resolution of the developed CSP module was a little lower than that of the CR-113 (Cremat, Inc., MA), and the resolution of the shaping amplifier was similar to that of the CR-200 (Cremat, Inc., MA). The value of $V_{rms}$ representing the magnitude of noise of the developed system was estimated as 6.48 keV and it was confirmed that the trajectory of the electron can be measured by the developed system considering the minimum energy deposition ( > ~51 keV) of Compton-recoiled electron in 145-${\mu}m$-thick DSSD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.330-331
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• 2006

Recently, plasma display panels (PDPs) are highlighted for the flat type display device. Therefore, much attention has been paid to secondary electron emission coefficient of the electrode protective material of PDPs. As PDPs is developing, the concern about secondary electron emission coefficient ($\gamma$) which is related with PDPs electrode protection material is increasing continually. So the concern about the way to how to measure secondary electron emission coefficient is on the rise. At present, the way to how to measure secondary electron emission coefficient is developed by some research groups, which is giving some research part's advance help. In this research, we have studied how to measure secondary electron emission coefficient which is related with various thin films more conveniently than previous measurement method. We studied the method of measurement of secondary electron emission coefficient (${\gamma}$) of amorphous silicon films by using Paschen's curve.