• Korean Journal of Materials Research
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• v.21 no.10
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Structural Engineering and Mechanics
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• v.70 no.5
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• pp.551-562
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• 2019

In the present study, a suitable mathematical model considering parabolic transverse shear strains for dynamic analysis of laminated composite skew plates under different types of impulse and spatial loads was presented for the first time. The proposed mathematical model satisfies zero transverse shear strain at the top and bottom of the plate. On the basis of the cubic variation of thickness coordinate in in-plane displacement fields of the present mathematical model, a 2D finite element (FE) model was developed including skew transformations in the mathematical model. No shear correction factor is required in the present formulation and damping effect was also incorporated. This is the first FE implementation considering a cubic variation of thickness coordinate in in-plane displacement fields including skew transformations to solve the forced vibration problem of composite skew plates. The effect of transverse shear and rotary inertia was incorporated in the present model. The Newmark-${\beta}$ scheme was adapted to perform time integration from step to step. The $C^0$ FE formulation was implemented to overcome the problem of $C^1$ continuity associated with the cubic variation of thickness coordinate in in-plane displacement fields. The numerical studies showed that the present 2D FE model predicts the result close to the analytical results. Many new results varying different parameter such as skew angles, boundary conditions, etc. were presented.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.85-91
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• 2024

In this study, we investigated a method of growing single crystal 𝛽-Ga₂O₃ thin films on a c-plane sapphire substrate using MOCVD. We confirmed the optimal growth conditions to increase the crystallinity of the 𝛽-Ga₂O₃ thin film and confirmed the effect of the ratio between O₂ and Ga precursors on crystal growth on the crystallinity of the thin film. The growth temperature range was 600~1100℃, and crystallinity was analyzed when the O₂/TMGa ratio was 800~6000. As a result, the highest crystallinity thin film was obtained when the molar ratio between precursors was 2400 at 1100℃. The surface of the thin film was observed with a FE-SEM and XRD ω-scan of the thin film, the FWHM was found to be 1.17° and 1.43° at the and (${\bar{2}}01$) and (${\bar{4}}02$) diffraction peaks. The optical band gap energy obtained was 4.78 ~ 4.88 eV, and the films showed a transmittance of over 80% in the near-ultraviolet and visible light regions.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.78.1-78.1
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• 2014

An ionization front (IF) surrounding an H II region is a sharp interface through which a cold neutral gas makes transition to a warm ionized phase by absorbing UV photons from central massive stars. We investigate the structure and instability of a plane-parallel D-type IF threaded by magnetic fields parallel to the front. We find that magnetic fields increase the maximum propagation speed of the IFs, while reducing the expansion factor, defined as the density ratio of neutral to ionized phases. IFs become unstable to distortional perturbations due to gas expansion across the fronts, exactly analogous to the Darrieus-Landau instability of ablation fronts in terrestrial flames. The growth rate of the IF instability is proportional linearly to the perturbation wavenumber as well as the upstream flow speed. The IF instability is stabilized by gas compressibility and becomes completely quenched when the front is D-critical. The instability is also stabilized by magnetic pressure when the perturbations propagate in the direction perpendicular to the fields. When the perturbations propagate in the direction parallel to the fields, on the other hand, it is magnetic tension that reduces the growth rate, completely suppressing the instability when ${\beta}$ < 1.5, with ${\beta}$ denoting the square of the ratio of the sound speed to the Alfven speed in the pre-IF region. When the front experiences an acceleration, the IF instability cooperates with the Rayleigh-Taylor instability to make the front more unstable. We discuss potential effects of IF instability on the evolution and dynamics of IFs in the interstellar medium.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.4
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• pp.594-603
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• 2002

The characteristics of moisture ventilation in a dry room were studied numerically The effect of three important parameters: position of outlets, aspect ratio($\beta$) of horizontal plane and air exchange rate(N), was analyzed by using the scales of ventilation efficiency. The ventilation performance was evaluated by varying the aspect ratio and air exchange rate in the four types of outlet position. It was shown that the ventilation performance was improved by decreasing the aspect ratio in the longitudinal arrangement of outlet. The highest ventilation performance was determined when $\beta$ was 4 in the transverse arrangement of outlet. Regardless of the aspect ratio, the ceiling arrangement of outlet played more dominant effect on the ventilation efficiency than the floor arrangement. In every type and aspect ratio, the increase of air exchange rate to improve ventilation performance was appropriate up to N=60 /h.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• Membrane Journal
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• v.2 no.1
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• pp.59-66
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• 1992

The experimental studies were carried out on ultrafiltration of PEG #6000 and dextran 70T macromole¬cules. using an asymmetric cellulose acetate membrane in a cross flow plane type cell. Effects of pressure difference. feed concentration were studied on permeate flux and observed rejection for both the macromole¬cules. and the concentration polarization layer resistance $R_{b1}$ on permeate flux was analysed. The concentration polarization layer resistance $R_{b1}$ was correlated with the average macromolecule concen¬tration $C_{b1}$ in polarization layer. The resulting dimensionless correlation was expressed as : $\frac{R_{b1}}{{R_m}}=\alpha[\frac{\rho_{b1}}{C_{b1}}]^\beta$

• Korean Journal of Plant Tissue Culture
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• v.22 no.4
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• pp.201-205
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• 1995

The synthetic oligomers called nos right palindrome (RP) element and left palindrome (LP) element were inserted into nos.minimal promoter nos 5'-101 deletion mutant The activity of nos promoter was measured by studying the expression pattern of gene fusion between nos promoter and reporter genes such as chloramphenicol acetyltransferase and $\beta$-glucuconidase. Analysis of transgenic tobacco plane carrying transgene showed that the activity of nos minimal promoter activity was recovered by insertion of synthetic nos RP element. Nos RP element insertion of nos minimal promoter was induced by auxin, dithiothreitol, salicylic acid and methyl jasmonate.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Steel and Composite Structures
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• v.22 no.6
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• pp.1417-1443
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• 2016

Cellular and castellated steel beams are used to obtain higher stiffness and bending capacity using the same weight of steel. In addition, the beam openings may be used as a pass for different mechanical fixtures such as ducts and pipes. The aim of this study is to investigate the effect of different parameters on both elastic and inelastic critical buckling stresses of steel web plates with openings. These parameters are plate aspect ratio; opening shape (circular or rectangular); end distance to the first opening; opening spacing; opening size; plate slenderness ratio; steel grade; and initial web imperfection. The web/flange interaction has been simplified by web edge restraints representing simply supported boundary conditions. A numerical parametric study has been performed through linear and nonlinear finite element (FE) models, where the FE results have been verified against both experimental and numerical results in the literature. The web plates are subject to in-plane linearly varying compression with different loading patterns, ranging from uniform compression to pure bending. A buckling stress modification factor (${\beta}$-factor) has been introduced as a ratio of buckling stress of web plate with openings to buckling stress of the corresponding solid web plate. The variation of ${\beta}$-factor against the aforementioned parameters has been reported. Furthermore, the critical plate slenderness ratio separating elastic buckling and yielding has been identified and discussed for two steel grades of DIN-17100, namely: ST-37/2 and ST-52/3. The FE results revealed that the minimum ${\beta}$-factor is 0.9 for web plates under uniform compression and 0.7 for those under both compression and tension.