• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.694-697
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• 2007

We demonstrate the use of screen printing in the fabrication of highly efficient phosphorescent polymer organic-light-emitting devices (OLEDs) based on a green-emitting $Ir(ppy)_3$ and a host polymer PVK. We incorporate PBD in the polymer host as an electron-transporting dopant and ${\alpha}-NPD$ as a hole transporting dopant. The best screen printed single-layer device exhibits very high peak luminous efficiency of 63 cd/A at a relatively high operating voltage of 17.1 V at the luminance of $650\;cd/m^2$. We observed the highest luminance of $21,000\;Cd/m^2$ at 35V. Due to the high operating voltage, despite of the high peak luminous efficiency the peak power efficiency was found to be 12.2 lm/W at the luminance of $470\;cd/m^2$ (15.9 V).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.691-693
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• 2007

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.442-443
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• 2007

We have studied new hole blocking layer for effective organic light emitting diodes. The device having a structure of ITO/2TNATA/$\alpha$-NPD/DPVBi : Rubrene(0.7%)/DPVBi/New Hole Blocking layer or BCP/$Alq_3$/LiF/Al has been used. The driving voltage of OLED with BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) or New HBL were 5.5V and 4.4V, respectively. As a result, new HBL rather than BCP has a good hole blocking ability.

• 한국ITS학회 논문지
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• 제6권2호
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• pp.138-145
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• 2007

발광형 교통안전표지는 안개가 잦은 곳, 야간 교통사고가 많이 발생하거나 발생가능성이 높은 곳, 도로의 구조로 인하여 가시거리가 충분히 확보되지 않은 곳 등과 같은 장소에서 제한적으로 사용하도록 규정 되었다. 현재 발광형 교통안전표지는 LED가 사용되고 있으나, 향후 새로운 교통안전표지용으로 유기발광다이오드를 제안하였다. 소자의 구조는 $ITO/2-TNATA(500{\AA})/{\alpha}-NPD(200{\AA})/DPVBi(300{\AA})/BCP(10{\AA})/Alq3(200{\AA})/LiF(10{\AA})/Al:Li(1000{\AA})$로 하였다. 인가전압 10 V에서 전류밀도는 $240.71mA/cm^2$, 휘도는 $10,550cd/m^2$, 발광효율은 3.53cd/A이었다. $N_2$ 가스가 주입된 플라즈마로 전처리한 ITO 표면을 갖는 소자가 플라즈마 전처리되지 않은 ITO 표면을 갖는 소자보다 특성이 향상되었다. EL 스펙트럼의 최대 발광 파장은 456nm이었고 색좌표값은 x=0.1449, y=0.1633으로 NTSC 색좌표 Deep blue 영역(x=014, y=0.08)에 근접한 순수한 청색에 가까운 값을 얻었다.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.53-56
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• 2007

We have fabricated organic white light emitting diodes by mixing two colors from very thin rubrene doped and non-doped DPVBi layers. The device structure was ITO/2-TNATA(15 nm)/${\alpha}$-NPD(35 nm)/DPVBi:rubrene(5 nm)/DPVBi(30 nm)/$Alq_{3}(5\;nm)$/BCP(5 nm)/LiF(0.5 nm)/Al(150 nm). The yellow-emitting rubrene of 0.7 wt % was doped into the blue-emitting DPVBi host for the white light. CIE coordinate of the device was (0.31, 0.33) at 8 V. The color coordinates were stable at wide ranges of driving voltages. The luminance was over $1,000\;cd/m^{2}$ at 8 V and increases to $14,500\;cd/m^{2}$ at 12 V. The maximum current efficiency of the device was 8.2 cd/A at $200\;cd/m^{2}$.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.381-386
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• 2012

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which $Alq_3$ as organic buffer layer and LiF and Al as inorganic protective layers were deposited to protect the damage of OLED by epoxy. And then the OLEDs were attached to flat glass by printing method using epoxy. The basic structure of OLED doped with rubrene of 1 vol.% as emitting layer is ITO(150 nm) / 2-TNATA(50 nm) / ${\alpha}$-NPD(30 nm) / $Alq_3$:Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). In case of depositing $Alq_3$, LiF and Al and then attaching of flat glass onto OLED, current density, luminance, efficiency and driving voltage were not changed and lifetime was increased according to thickness of Al as inorganic protective layers. The lifetime of OLED/$Alq_3$/LiF/Al_4/glass structure was 139 hours increased by 15.8 times more than bare OLED of 8.8 hours and 1.6 times more than edge sealed OLED of 54.5 hours.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.936-940
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• 2005

IMML(Inorganic metal multi-layer) was used as cathode in the OLED devices to reduce the reflectance or ITO and increase the contrast ratio. Device structure was $ITO/{\alpha}-NPD/Alq_3:DCJTB/Alq_3/IMML/Al$. $Alq_3$ and DCJTB (4 - (dicyanomethylene) - 2 - ( 1 - propyls) 6 - methy 4H - pyrans) as host material lot red emission and red emitting guest material. IMML made three different layer: thin aluminum layer, aluminum layer doped with silicon monoxide, thick aluminum layer. The red OLED device with IMML showed the average reflectance of $4.97\%$, and then normal OLED with or without polarizer showed the average reflectance of $4.55\%$, $46\%$ at visible range from 380 nm to 780 nm. The brightness of OLED with IMML at 13 V was 5557 $cd/m^2$, and that of normal OLED with polarizer was 4872 $cd/m^2$. IMML could be the substitution for polarizer with same reflection, low cost, easy process in flat panel display market.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.941-944
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• 2005

In this experiment, OLEDs(Organic Light Emitting Diodes) was fabricated to confirm effect of Plasma treatment which increase the hole injection characteristic from anode. Device structure was $ITO/2-TNATA/{\alpha}-NPD/DPVBi/BAlq/Alq_3/Al:Li$. We used DPVBi (4, 4 - Bis (2,2-diphenylethen-1-yls) - Biphenyl) as a blue emitting material. To optimize the process condition of plasma treatment, we used 2 gases of the oxygen and nitrogen gas under 120 mTorr with 100 W, 200 W, and 400 W plasma power. The current efficiency of $N_2$ plasma is more efficient than that of $O_2$ plasma. At $1000 cd/m^2$, we obtained the maximum current efficiency of 6.45 cd/A using $N_2$ gas with 200 W plasma power.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.83-88
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• 2004

BAlq was fabricated as for hole blocking layer in the OLED devices to investigate its electrical and optical characteristics. Device structure was ITO/$\alpha$ -NPD/EML/BAlq/Alq3/Al:Li using TYG-201, DPVBi (4, 4 - Bis (2, 2 - diphenylethen-1 - yls) - Biphenyl), Alq and DCJTB (4-(dicyanomethylene)-2- (1-propyls)6-methy 4H-pyrans) as green emitting material, blue emitting material, host material for red emission and red emitting guest material respectively. The OLED device showed optimum working voltage and electron density at 600 cd/$m^2$ when thickness of BAlq is 25$\AA$ for RGB OLED devices while their efficiencies are better at 50$\AA$ of BAlq. Red and blue color OLEDs also fabricated using 30$\AA$ thickness of BAlq and compared with those without BAlq layer. BAlq was more effective in electrical properties such as working voltage, current density and efficiency of red OLED than blue and green ones. This study describes that 30$\AA$ is optimum thickness of BAlq for best performance of full color OLED devices when using BAlq as a hole blocking material.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.145-148
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• 2010

White organic light emitting devices were fabricated to improve the stability through a structural change using the two peak emission method. The fabricated devices were composed of indium tin oxide (100 nm)/ $\alpha$-NPD (30 nm)/4,40-bis(2,20-diphenylvinyl)-1,10-biphenyl (DPVBi, d: variable)/DPVBi: Rubrene (40 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(5 nm)/ $Alq_3$(5 nm)/ Al (100 nm). A DPVBi for blue emissions was used as the host material in the emitters. The doping concentration of the Rubrene was fixed at 2.0% (by weight). The white emission with Commission Internationale De L'Eclairage coordinates of (0.3342, 0.3439) occurred at 14 V with a thickness d of 1 nm. It was insensitive to the drive voltage, and the devices had a maximum luminance of $211\;cd/cm^2$. At 19 V, the current density and maximum external quantum efficiency were $173\;mAcm^2$ and 0.478%, respectively.