• Journal of Radiation Protection and Research
• /
• v.14 no.1
• /
• pp.8-15
• /
• 1989

After administration of $^{99m}TC,\;^{67}Ga,\;^{131}I,\;^{32}P\;and\;^{238}U(UO_2(NO_2)_3{\cdot}6H_2O)$, in male rats, toxic effects were examined by determining the biological materials in blood. Dosages of radio-nuclides injected are based on the amounts routinely administered to patients, and concentrations of BUN, creatinine, SGOT, SGPT and $PGE_2$ in plasma are determinated as indices to the biochemical response. No increase of creatinine was observed after injection of $^{99m}TC$. Concentrations of BUN, SGOT and $PGE_2$ were not significantly increased in comparison with before-administration. Administration of $^{67}Ga,\;^{131}I\;and\;^{32}P$, did not significantly change BUN, SGPT and SGOT, but largely increased $PGE_2$ than control levels. Besides, $^{238}U$ Showed the most severe toxicity. From the above results, we suggest that the determination of $PGE_2$ in plasma can be used as an index in case of elvaluating the effects of radiation toxicity by nuclides used in nuclear medicine.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.2
• /
• pp.67-74
• /
• 1994

Effects of the GaAs semiconductor particles on electrophysical phenomena at the Pt electrode/10S0-3TM KCl aqueous electrolyte interfaces have been studied using voltammetric time based and electrochemical impedance techniques. The anodic decomposition effect f the GaAs semiconductor particles on electrophysical phenomena was significantly observed during the positive potential scan (0 to 1.0 V vs. SCE). On the other hand, the cathodic decomposition effect of the GaAs semiconductor particles was negligible during thenegative potential scan (0 to -1.0 V vs. SCE). The GaAs semiconductor particles act as current activators or mediators during the anodic process and act as charge screens during the cathodic process. The electrolyte resistance and related impedance was increased due to the presence of the GaAs semiconductor particles. The anodic decomposition effect of the GaAs semiconductor particles can directly be applied to activate the hydrogen evolution.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.1
• /
• pp.50-57
• /
• 1986

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

• The Korean Journal of Nuclear Medicine
• /
• v.35 no.4
• /
• pp.280-285
• /
• 2001

We present a case of a 31 year-old male patient with tuberculous pericarditis with mediastinal mass that showed increased uptake on Gallium-67 image. Gallium-67 scan was performed to evaluate the activity of the superior mediastinal mass, which was detected on chest CT. A rim of intense activity around the heart was observed, but increased uptake was not seen in the mediastinum. However, on maximal contrast-enhanced SPECT images, a small focus of faint uptake was observed in the superior mediastinum. This finding implied that there was an active tuberculosis in the pericardium and inflammation in the superior mediastinal mass. This case demonstrated that Gallium-67 scinitigraphy was helpful for the diagnosis of tuberculous pericarditis.

• Nuclear Medicine and Molecular Imaging
• /
• v.40 no.3
• /
• pp.177-185
• /
• 2006

Purpose: Purpose of this study is to synthesize $^{99m}Tc$-labeled transferrin for injection imaging and to compare it with $^{67}Ga$-titrate for the detection of infectious foci. Materials and methods: Succinimidyl 6-hydrazino-nicotinate hydrochloride-chitosan-transferrin (Transferrin) was synthesized and radiolabeled with $^{99m}Tc$. Labeling efficiencies of $^{99m}Tc$-Transferrin were determined at 10 min, 30 min, 1 hr, 2 hr, 4 hr and 8 hr. Biodistribution and imaging studies with $^{99m}Tc$-Transferrin and $^{67}Ga$-citrate were performed in a rat abscess model induced with approximately $2{\times}10^8$ colony forming unit of Staphylococcus aureus ATCC 25923. Results: Successful synthesis of Transferrin was confirmed by mass spectrometry. Labeling efficiency of $^{99m}Tc$-Transferrin was $96.2{\pm}0.7%,\;96.4{\pm}0.5%,\;96.6{\pm}1.0%,\;96.9{\pm}0.5%,\;97.0{\pm}0.7%\;and\;95.5{\pm}0.7%$ at 10 min, 30 min, 1 hr, 2 hr, 4 hr and 8 hr, respectively. The injected dose per tissue gram of $^{99m}Tc$-Transferrin was $0.18{\pm}0.01\;and\;0.18{\pm}0.01$ in the lesion and $0.05{\pm}0.01\;and\;0.04{\pm}0.01$ in the normal muscle, and lesion-to-normal muscle uptake ratio was $3.7{\pm}0.6\;and\;4.7{\pm}0.4$ at 30 min and 3 hr, respectively. On image, lesion-to-background ratio of $^{99m}Tc$-Transferrin was $2.18{\pm}0.03,\;2.56{\pm}0.11,\;3.08{\pm}0.18,\;3.77{\pm}0.17,\;4.70{\pm}0.45\;and\;5.59{\pm}0.40$ at 10 min, 30 min, 1 hr, 2 hr, 4 hr and 10 hr and those of $^{67}Ga$-citrate was $3.06{\pm}0.84,\;4.12{\pm}0.54\;and\;4.55{\pm}0.74 $ at 2 hr, 24 hr and 48 hr, respectively. Conclusion: Transferrin is successfully labeled with $^{99m}Tc$, and its labeling efficiency was higher than 95% and stable for 8 hours. $^{99m}Tc$-Transferrin scintigraphy showed higher image quality in shorter time compared to $^{67}Ga$-citrate image. $^{99m}Tc$-transferrin is supposed to be useful in the detection of the infectious foci.

• Journal of Sensor Science and Technology
• /
• v.12 no.2
• /
• pp.66-71
• /
• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.5
• /
• pp.663-668
• /
• 2018

A combined CPG (Central Pattern Generator) based foot trajectory and GA (Genetic Algorithm) based joint compensation method is presented for adaptive humanoid walking. In order to increase an adaptability of humanoid walking for rough terrains, the experiment for rolling terrains are introduced. The CPG based foot trajectory method has been successfully applied to basic slops and variable slops, but has a limitation for the rolling terrains. The experiments are conducted in an ODE based Webots simulation environment using humanoid robot Nao to verify a stability of walking for various rolling terrains. The proposed method is compared to the previous CPG foot trajectory technique and shows better performance especially for the cascade rolling terrains.

• The Korean Journal of Nuclear Medicine
• /
• v.26 no.1
• /
• pp.111-115
• /
• 1992

Miliary Tuberculosis is an illness produced by acute dissemination of tubercle bacilli via the blood stream. In chest roentgenogram, a diffuse "miliary" infiltrates are usually seen, but normal or suspicious ground glass pattern also can be seen in early manifestation. Ten patients of miliary tuberculosis who underwent whole-body $^{67}Ga-citrate$ scintigraphy were evaluated retrospectively to study usefulness of Ga-scan for early diagnosis of miliary Tbc and evaluation of disease activity. All of ten patients demonstrated significantly diffuse bilateral pulmonary uptakes on 48 hours image. All of three patients of ground-glass pattern in chest roentgemogram also demonstrated increased uptakes. In the statistical analysis, the severity of chest roentgenographic findings showed positive correlation with the activity on Ga?scan. These results suggest that Gallium scan is useful for diagnosis of early miliary tuberculosis and for evaluation of disease activity on follow-up examination of miliary tuberculosis of lung.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.67-67
• /
• 2011

Pulsed DC $BCl_3/SF_6$ 플라즈마를 사용하여 GaAs와 AlGaAs의 건식 식각을 연구하였다. 식각 공정 변수는 가스 유량 (50~100 % $BCl_3$ in $BCl_3/SF_6$), 펄스 파워 (450~600 V), 펄스 주파수 (100~250 KHz), 리버스 시간 (0.4~1.2 ${\mu}s$)이었다. 식각 공정 후 표면 단차 측정기 (Surface profiler)를 사용하여 표면의 단차와 거칠기를 분석하였다. 그 결과를 이용하여 식각률 (Etch rate), 표면거칠기 (Surface roughness), 식각 선택비 (Selectivity)와 같은 특성 평가를 하였다. 실험 후 주사 현미경 (FE-SEM, Field Emission Scanning Electron Microscopy)을 이용, 식각 후 시료의 단면과 표면을 관찰하였다. 실험 결과에 의하면 1) 18 sccm $BCl_3$ / 2 sccm $SF_6$, 500 V (Pulsed DC voltage), 0.7 ${\mu}s$ (Reverse time), 200 KHz (Pulsed DC frequency), 공정 압력이 100 mTorr인 조건에서 GaAs와 Al0.2Ga0.8As의 식각 선택비가 약 48:1로 우수한 결과를 나타내었다. 2) 펄스 파워 (Pulsed DC voltage), 리버스 시간(Reverse time), 펄스 주파수(Pulsed DC frequency)의 증가에 따라 각각 500~550 V, 0.7~1.0 ${\mu}s$, 그리고 200~250 KHz 구간에서 AlGaAs에 대한 GaAs의 선택비가 감소하게 되는 것을 알 수 있었다. 이는 척 (chuck)에 인가되는 전류와 파워를 증가시키고, 따라서 GaAs의 식각률이 크게 증가했지만 AlGaAs 또한 식각률이 증가하게 되면서 GaAs에 대한 식각 선택비가 감소한 것으로 생각된다. 3) 표면 단차 측정기와 주사전자현미경 사진 결과에서는 GaAs의 경우 10% $SF_6$ (18 sccm $BCl_3$ / 2 sccm $SF_6$)가 혼합된 조건에서 상당히 매끈한 표면 (RMS roughness < 1.0 nm)과 높은 식각률 (~0.35 ${\mu}m$/min), 수직의 식각 측벽 확보에서 매우 좋은 결과를 보여주었다. 또한 같은 공정 조건에서 AlGaAs는 식각이 거의 되지 않은 결과 (~0.03 ${\mu}m$/min)를 보여주었다. 위의 결과들을 종합해 볼 때 Pulsed DC $BCl_3/SF_6$ 플라즈마는 GaAs와 AlGaAs의 선택적 식각 공정에서 매우 우수한 공정 결과를 나타내었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.12
• /
• pp.1139-1147
• /
• 2011

In this paper, a design and fabrication of GaN power amplifier for the S-band frequency (400 MHz bandwidth) are presented. A combining path using ${\lambda}$/4 transmission line is implemented for GaN pallet amp. Both the combiner with suspended-type transmission structure for low-loss and the suspended stripline coupler with aperture coupling for auto gain control are realized for achieving high-power high-efficiency amplifier. Proposed power amplifier demonstrated a 5 kW peak output power, 27.8 % efficiency, 67 dB gain without ALC and a 4 kW peak output power, 25.5 % efficiency, 0.1 dB droop at 200 usec pulse width and 10 % duty with ALC.