• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.206-206
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• 2011

Nanoparticles have been received great attention from many researchers for several decades because of their good and unique properties. In particular, researches in the field of synthesis of bimetallic nanoparticles showed good results for the past ten years. In this research, Pd thinlayer on Au nanoparticles were synthesized by electrochemical deposition method. Well-defined Au(111) nanoparticles were synthesized by solution based reduction method. Electrochemical deposition conditions for Pd thinlayer on Au(111) nanoparticles surface were carefully regulated by controlling parameters of cyclic voltammetry. To calculate exact mass and surface area catalytic activities of deposited Pd thinlayer on Au(111) nanoparticle, electrochemically active surface area (ECSA) and mass of the deposited Pd thinlayer were measured by cyclic voltammetry in 0.1 M HClO4 solution. Afterward, catalytic activities of the deposited Pd thinlayer were measured in 0.1 M HClO4 + 0.2 M formic acid solution. In case of less negative deposition potential, the amounts of deposited Pd mass and surface area were small. However, mass and ECSA activity of the deposited Pd to oxidize formic acid were increased.

• 대한가정학회:학술대회논문집
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• 대한가정학회 1997년도 Program & Abstracts * The 7th Korea-Japan Home Economics Joint Syposium
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• pp.111-111
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• 1997

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• 분석과학
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• 제5권3호
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• pp.303-308
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• 1992

Ti과 Si의 초기 반응이 Titanium Silicide의 표면 거칠기 (Surface roughness)를 고찰하기 위해 연구하였다. 형성기구는 In-situ AES와 LEED의 측정장비로 연구하였다. Ti의 하나나 두 원자층이 초고진공에서 원자적으로 깨끗한 Si 기판 위에 증착되었다. Reconstruction이 된 $7{\times}7$ Si(111) 표면이 초 고진공하에서 얻어졌으며 박막의 증착은 Quartz Crystal Oscillator로 측정되었다. In-situ 측정 결과 Ti과 Si의 초기 반응이 실온에서 일어났으며 Disorder막을 형성하였다. 낮은 온도($200^{\circ}C{\sim}300^{\circ}C$)에서 Ti과 Si의 Intermixing이 고찰되었고 $400^{\circ}C$ 근처에서 $1{\times}1$ Si(111) LEED 패턴이 관찰되었다. 이것은 Disorder막이 Order막으로 변화가 생긴 것을 나타낸다. 더 높은 온도에서 $7{\times}7$ Si(111) LEED 패턴이 재관찰되었는데 이것은 3차원적인 $TiSi_2$의 형성을 증명하는 것이다.

• 한국세라믹학회지
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• 제39권12호
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• pp.1149-1152
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• 2002

실리콘의 고압상을 연구하는 수단으로 압입 방법을 사용하였다. 실험에는 (100)과 (111) 실리콘 웨이퍼를 사용하였으며 하중유지 시간과 하중인가 속도에 따른 잔류상의 변화를 연구하였다. 압입 후의 상분석에는 Raman spectroscopy를 사용하였다. 하중 유지 시간의 실험결과 (111) 시편에서는 하중 유지 시간이 길어질수록 소성변형이 진행되어 고압상인 Si-III 와 Si-XII는 결정구조를 유지하지 못하고 사라지고 대신 a-Si가 관찰되었다. 하중 인가 속도 실험 결과 하중 인가 속도가 0.1 mm/min일 경우 모든 시편의 force/displacement 곡선에서 pop-in을 관찰할 수 있었다. Raman peak 분석 결과 이들 시편에서는 상전이가 관찰되었다. 5 mm/min의 하중인가 속도의 경우 (111) 시편에서는 급격한 변형의 증가 부분이 관찰되었으나 (100) 시편의 경우 관찰되지 않았다. 하중인가 속도가 느릴 경우 상전이 양상이 뚜렷하게 나타났으며 반대의 경우 상전이는 소량 관찰되거나 관찰되지 않았다. 이것은 하중인가속도가 상전이 영역의 부피에 영향을 주기 때문이라 판단된다.

• Bulletin of the Korean Chemical Society
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• 제25권2호
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• pp.167-171
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• 2004

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 $cm^{-1}$ appeared after the H-Si(111) surface was immersed in 40% $NH_4F$ solution containing 10 mM $Cu^{2+}$. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and $Cu^{2+}$ ions in solutions, which are changed into $Si(OH)_x(F)_y$ containing $SiF_6^{2-}$ ions and neutral copper islands.

• 한국연초학회지
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• 제20권2호
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• pp.153-159
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• 1998

The vein necrotic strain of Potato Virus Y (PVY - VN) and black shank (Phyto-phthora parasitica var. nicotianae) are the two major diseases causing severe damages especially in burley tobacco (N. tabacum L.) area in Korea. A new tobacco variety, KB 111, resistant to PVY and black shank disease, was developed by Korea Ginseng & Tobacco Research Institute in 1997. It is a male sterile(MS) F$_1$ hybrid of the cross between MS TC 613 and KB 108. KB 111 was compared to Burley 21 on the agronomic characteristics and disease resistances in performance tests: It possessed upright growth habit and flowered two days later than Burley 21. It was resistant to both PVY and black shank and yielded about 3% more cured leaf than Burley 21, but other characteristics are very simiar to those of Burley 21. The chemical composition and physical properties of the cured leaf of KB 111 were as much acceptable as those of Burley 21 while it produced average yield of good quality leaf and appeared to resistant to PVY and black shank disease on regional farm test in 1998.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 대한핵의학회지
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• 제24권1호
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• pp.37-48
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• 1990

Detection of deep-seated abscesses is sometimes difficult with ultrasonogrpahy or computed tome graphy alone. Indium-111-labeled leukocyte has widely used in the localization of abscesses after introduction by Segal and Thakur in 1976. But there are some difficulties in using indium-111-oxine in our country because of hardness to get the radiopharmaceutical timely and long time for labeling leukocytes. So we peformed the indium-111-labeled leukocyte scan for establishment of the labeling procedure and clinical application. We labeled the mixed leukocytes from 36 ml of patient's blood using 4 ml of ACD solution, 7 ml of 6% hydroxyethyl starch solution $(HESPAN^{(R)})$, 1 mCi of indium-111 oxine, 5 ml of normal saline and centrifuge. It took about 2 hours for the preparation of radiolabeled leukocytes and attention for contamination was needed. The average injected dose of labeled mixed leukocytes was 465 uCi. The average number of injected leukocytes was $2.5\times10^8$ and the labeling ratio was $57{\pm}13%$ (Table 2, Fig. 5). These number and ratio were sufficient for the localization of abscess. About twenty per cent of indium was labeled to red blood cells and platelets (Fig. 6) and the half-life of injected radiolabeled leukocytes was 8.3 hours. Scan was performed in 9 patients who were suspected to have abscesses clinically or radiologically. Three patients were positive, in one patient who had abscess close to lower lumbar vertebrae was surgically drained and another 2 positive cases did not show abscess clearly on computed tomography, so only antibiotics were administrated and treated successfully. The negative 6 patients were improved without specific treatment. In conclusion, the use of indium-111 oxine labeled leukocytes for localization of abscesses were very specific and helpful in the decision of treatment considering its relatively simple labeling method, and could be easily performed providing timely supply of the radiopharmaceutical.

• 소성∙가공
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• 제29권3호
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• pp.127-134
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• 2020

It is known that the difference of texture of the polycrystalline Al sheet is not a critical parameter for the formation of aligned nanopore arrays in anodic aluminum oxide (AAO). This will be related to the polycrystalline grain in the Al sheet. The texture of each grain in the polycrystalline Al sheet is different. The mixed textures of grains have the mixing effects on the nanopore structure of the AAO. Thus, the effect of Al texture on the nanopore structure of the AAO was investigated using three types of Al single crystals with (111), (200) and (220) textures in this paper. These three types of AAO layers were fabricated by the two-step anodizing method at 40 V and temperature of 0-5℃ in oxalic acid solution. In the nanopores formed on the AAO, the average area of one nanopore and the average roundness of one nanopore were measured were measured based on the SEM images. In the hexagon obtained by connecting nanopores on the AAO, the average standard deviation of one angle deviated from 120° was measured. In the AAO nanopores with texture of (111), (200) and (220) single crystal samples, the average area of one nanopore of (200) single crystal sample was the widest, followed by (111), (220) single crystals. The average circularity of one nanopore of (200) single crystal sample was the best, followed by (111), (220) single crystals. The average standard deviation of an angle from 120° of (220) single crystal sample was the largest, followed by (111) and (200) single crystals.