• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1186-1191
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• 2004

ZnO varistor ceramics which were fabricated with variation of added of 0.5～1.0 mol% Co$_3$O$_4$, were sintered at 1150 $^{\circ}C$. In the specimen added 0.7 mol% Co$_3$O$_4$, sintered density was 6.03 g/㎤ and electrical properties were superior to any other compositions. The nonlinear coefficient a and clamping voltage ratio were 83 and 1.35, respectively. But, endurance surge current in the specimen added 0.5 mol% Co$_3$O$_4$ was 7000 A/$\textrm{cm}^2$, and deviation of varistor voltage was Δ-3.23 %. As P.C.T and T.C.T environmental test were succeed in all specimens, and deviation of varistor voltage in the specimen added 0.6 mol% Co$_3$O$_4$ was Δ-0.81 %. All specimens showed good leakage current property on the High Temperature Continuous Load Test(HTCLT) for 1000 hr at 85 $^{\circ}C$ and variation rate of the varistor voltage below Δ-2.0 %.

• 한국세라믹학회지
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• 제27권3호
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• pp.361-368
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• 1990

The properties of the powder of ZrO2＋3m/o Y2O3 system prepared by co-precipitation method at the pH values of 7, 9, 10 and 11 were investigated. ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Zirconium hydroxide near by Zr(OH)4 structure showed more excellent crystallinity and lower formation temperature of tetragonal ZrO2. In the range of this study, cubic ZrO2 was not formed and stability of tetragonal ZrO2 prepared in the conditiion of pH 7 was most excellent. Average particle sizes and specific surface areas of tetragonal ZrO2 powders, prepared as calcining amorphous zirconium hydroxides at $600^{\circ}C$ for 1h, were 0.6-0.8${\mu}{\textrm}{m}$ and 45-70$m^2$/g, respectively.

• 한국진공학회지
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• 제5권3호
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• pp.245-250
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• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.

• 한국세라믹학회지
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• 제40권12호
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• pp.1208-1212
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• 2003

CaCO$_3$ powders were synthesized by aqueous solution reaction of CaC1$_2$ㆍ2$H_2O$-(NH$_4$)$_2$CO$_3$ system with NH$_4$OH at 45$^{\circ}C$ and pHs 8, 9, 10, and 11 and in the concentration range of 0.1∼5 M and its polymorphism, morphology and size were investigated. In order to investigate the influence of pH on nucleation, pH was adjusted before and after reaction respectively. When pH was adjusted after reaction a formation ratio of vaterite was increased with increasing pH and concentration but vaterite was formed with calcite. But, when pH was adjusted before reaction, the formation rate of vaterite was increased with increasing pH and concentration. resulting in a phase-pure vaterite with a spherical shape and 2∼5 $\mu\textrm{m}$ in size. It was found that solubility of alkaline vaterite was decreased with increasing OH- ions in the high pH solution. When pH was adjusted before nucleation in the high concentration range, in particular, decreasing of solubility disturbed transformation of initially formed numerous vaterite to calcite.

• Nuclear Engineering and Technology
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• 제8권4호
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• pp.231-242
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• 1976

중 준위 방사성 폐액의 증발 농축물을 불용성 물질로 고형화하기 위해 blown asp-halt와 straight asphalt를 혼합사용하여 제조된 bitumen-waste 고화체로부터 방사성핵종의 용출에 대한 고화체의 호학적 특성 및 용출 조건의 영향에 대해서 조사하였다. 고압 및 저온하에서 120일동안 $^{90}$ Sr 및 $^{137}$Cs의 용출율은 상압 및 상온때 보다 낮은 용출율을 보였으며, 40wt%염을 함유한 고화체에 대한 인공 해수 및 증류수에 대한 용출율의 영향은 별로 차이점이 관찰되지 않았다. 순수 asphalt 및 고화체의 연화점은 $^{60}$Co 조사에 의해 총선량 증가와 함께 증가 됐으나, 5.8$\times$$10^{8}$ rad, 까지 조사된 asphalt는 부피 증가나 팽윤 현상이 나타나지 않았다. 또한 Infrared spectra에 의해 blown asphalt의 functional group을 확인하였고, 계속 방사선에 의한 영향등을 조사중이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.144-144
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• 1999

최근 국내 반도체 기술의 비약적인 발전으로 전자 기기 전반에 소형화, 고주파화, 고기능화 등이 진행되는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기 신호를 변조.증폭시키는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기신호를 변조.증폭시키는 인덕터, 트랜스 포머와 같은 수동 자기 소자는 아직도 3차원 벌크 형태로 사용되고 있다. 일본을 중심으로 각국에서는 자기 소자의 박막.소형화에 대한 다각도의 연구가 진행되었으나 국내서는 아직 미미한 실정이다. 따라서 고집적 전원 공급 장치나 지능 센서 등에 반도체와 자기 소자의 사용 주파수 대역과 크기가 통합된 반도체-자성체 IC(semiconductor-magnetic integrated circuit)의 필요성이 절실히 요구되고 있다. 현재 사용중인 벌크형 인덕터나, 트랜스 포머의 경우 10NHz이상의 고주파 대역에는 응용되지 못하고 있다. 이는 적용된 자성체가 페라이트(ferrite)로서 초투자율은 크지만 고주파대역에서의 공진 현상에 의해 저투자율을 나타내고, 포화 자속밀도가 낮기 때문이다. 이러한 페라이트 자성체의 대체품으로 주목받고 있는 것이 Fe, Co계 고비저항 자성마이다. 그러나 Co는 낮은 포화자속밀도를 나타내기 때문에 이러한 조건을 충족시키는 자성막으로 Fe계 미세 결정막을 사용하였다. 본 연구에서는 선택적 전기 도금법(selective electroplating method)과 LIGA like process를 이용하여 공시형 인덕터(air core inductor)의 라이브러리(library)를 구축한 뒤, 고주파 대역에서의 우수한 연자기 특성을 가지는 Ti/FeTaN막을 적용한 자기 박막 인덕터(magnetic thin film inductor)를 제작하여 비교.분석하였다. 제조된 인덕터의 특성 추정은 impedence analyzer를 이용하여 주파수에 따른 저항(resistance), 인덕턴스(inductance)를 측정, 계산한 성능지수(quality factor)로서 인덕터의 성능을 평가하였다. 제조된 박막 인덕터의 코일 형상은 5턴의 double rectangular spiral 구조였으며, 적용된 자성막의 유효 투자율9effective permeability)은 1500, 자성막, 절연막 그리고 코일의 두께는 각각 2$\mu\textrm{m}$, 1$\mu\textrm{m}$, 20$\mu\textrm{m}$이며 코일의 폭은 100$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다.

• 한국세라믹학회지
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• 제28권2호
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• pp.160-166
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• 1991

Microstructure and phase changes during the sintering of ZnO varistors were studied in ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems using acanning electron microscopy (SEM) with an energy dispersive X-ray analysis (EDAX), X-ray diffraction (XRD) and differential thermal analysis (DTA). The spinel phase and the Bi2O3 phase were formed by the decomposition of the pyrochlore phase during heating. The spinel particles (2-4$\mu\textrm{m}$), which were formed both along ther grain boundaries and within the ZnO grain, were always found near the pyrochlore phase. Intergranular phases (Bi2O3 and pyrochlore) were precipitated from the liquid phase during cooling. The Bi2O3 phases were located at the triple (or multiple) point of the ZnO grains. Cr2O3 played a role in decreasing the formation temperature of the spinel phase and Bi2O3 phase during sintering, and inhibited the grain growth.

• 한국세라믹학회지
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• 제31권10호
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.436-439
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• 2000

Change of dielectric loss of use in high relative permitivity capacitor BaTiO$_3$ ceramic depends on Mn doping have been investigated. The powders used in this study were commercial BaTiO$_3$, TiO$_2$and, MnCO$_3$. Sample was fabricated by conventional ceramic process. The quantity of Mn was changed gradually from 0.lmol% to 10mo1%. The sintering densities were reduced with increasing amount of MnCO$_3$. This result is because of increase of low density second phase BaMnO$_3$. When the samples were doped by over 0.2mol% of MnCO$_3$, average grain sizes were enlarge to several tens ${\mu}{\textrm}{m}$. The dielectric losses were reduced by Mn doping to lmol% but, increased from lmol% to 10mo1% gradually.