• Journal of the Korean Applied Science and Technology
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• v.33 no.2
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• pp.286-292
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• 2016

1, 2-Hexanediol galactoside (HD-gal) has been synthesized from 1, 2-hexanediol (HD), a cosmetic preservative, using recombinant Escherichia coli ${\beta}$-galactosidase (${\beta}$-gal) at the high lactose concentration (300 g/l). To confirm the molecular structure of synthesized HD-gal, NMR ($^1H$- and $^{13}C$-) spectroscopy and mass spectrometry of HD-gal were conducted. $^1H$ NMR spectrum of HD-gal showed multiple peaks corresponding to the galactocyl group, which is an evidence of galactocylation on HD. Downfield proton peaks at ${\delta}_H$ 4.44 ppm and multiple peaks from ${\delta}_H$3.96~3.58 ppm were indicative of galactocylation on HD. Up field proton peaks at ${\delta}_H$ 1.60~1.35 ppm and 0.92 ppm showed the presence of $CH_2$ and $CH_3$ protons of HD. $^{13}C$ NMR spectrum revealed the presence of 21 carbons suggestive of ${\alpha}$- and ${\beta}$-anomers of HD-gal. Among 12 carbon peaks from each anomers, the 3 peaks at dC 68.6, 60.9 and 13.2 ppm were assigned to be overlapped showing only 21 peaks out of total 24 peaks. The mass value (protonated HD-gal, m/z = 281.1601) from mass spectrometry analysis of HD-gal, and $^1H$ and $^{13}C$ NMR spectral data were in well agreement with the expecting structure of HD-gal. For further study, the minimum inhibitory concentrations (MICs) of HD-gal against bacteria will be investigated, and, in addition, cytotoxicity to human skin cells of HD-gal will be examined. It is expected that it will eventually be able to develop a new cosmetic preservative, which have low cytotoxicity against human skin cell and maintains antimicrobial effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.60-64
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• 2007

Ba-Ferrite single crystals were prepared and characterized by X-ray, SEM and Mossbauer spectroscopy. The single crystal layers was cut in the c-axis and radiated to the surface by ${\gamma}-rays$ for Mossbauer spectroscopy. We found out that the spin states in Fe atoms were parallel to the ${\gamma}-rays$ direction. The temperature dependence of the hyperfine field is almost similar to that of powder samples. The crystal structure is a Magnetoplumbite without any other phases and the lattice parameters are found out with $a_0=5.892{\AA},\;b_0=5.892{\AA},\;c_0=23.198{\AA}$. $M\"{o}ssbauer$ spectrum in single crystal have 5 sets off absorption lines in each Fe site when the ${\gamma}-rays$ have the same radiation direction with the c-axis in the crystal, which mean that the whole crystal bulk formed only one crystal and same spin direction. The hysteresis curve shows the saturation moment and coercive force of 70.71 emu/g and 320 Oe respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Society of Food Science and Nutrition
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• v.43 no.10
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• pp.1535-1542
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• 2014

This study was conducted to investigate the physicochemical properties and biological activities of collagens with different molecular weights from Alaska pollack (Theragra chalcogramma) skin as well as their efficacies as functional materials. The molecular weights of collagens were between 1~10 kDa (below 1 kDa (AP1), 1~3 kDa (AP2), 3~10 kDa (AP3), and above 10 kDa (AP4). The protein content of AP4 (40.19 g/100 g) was the highest. Collagen contents of AP1, AP2, AP3, and AP4 were 36.43, 32.23, 19.23, and 14.89%, respectively. The free amino acid and essential amino acid contents of AP1 were higher than those of AP2, AP3, and AP4. Fourier transform infrared spectroscopy spectra of collagens with different molecular weights showed wavenumbers representing the regions of amide I, amide II, amide III, and amide A, respectively. The electron-donating ability (29.51%) and SOD-like activity (38.45%) of AP1 were higher than those of AP2, AP3, and AP4. Tyrosinase inhibition activity of AP1 improved with higher treatment concentration. The rate of inhibition of MMP-1 production in HS68 cells exposed to UVB was suppressed by treatment with AP1 (29.78%) and AP2 (26.49%) at 1 mg/mL. Furthermore, there was a strong correlation between DPPH, superoxide dismutase, tyrosinase activity, and MMP-1 inhibition rate of collagens with different molecular weights.

• Proceedings of the Korea Inteligent Information System Society Conference
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• 2000.11a
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• pp.257-266
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• 2000

산업 및 가정용 기기들이 점차 복잡해짐에 따라 다양한 공학 분야의 해석 기술을 동시에 고려하면서 이들 원리를 적용한 최적의 설계를 결정하는 방법론의 필요성이 대두되고 있다. 다분야통합최적설계 또는 MDO(Multidisciplinary Design Optimization)라 일컫는 새로운 기술은 이러한 필요에 대응하는 기술로서 국내외적으로 활발한 연구가 진행되고 있다. 이러한 MDO 기술을 구현하는 소프트웨어와 하드웨어 복합 체계를 MDO 프레임웍(framework)이라 한다. 일반적으로 프레임웍이란 실제 응용프로그램의 용도에 맞는 주문제작(customization)이 가능한 일종의 전단계 프로그램이라 할 수 있다 MDO 프레임웍은 설계 및 해석 도구들간의 인터페이스를 제공하고, 이들 도구들이 사용하는 설계 데이터를 효율적으로 공유할 수 있도록 지원하여, 설계 작업을 정의, 실행, 관리하는 역할을 한다. 이러한 MDO 프레임웍은 설계 작업을 통합적으로 관리하고 자동화하여 설계 도구간의 데이터 전달과 변환에 소묘되는 설계자의 부담을 경감시키며 다분야 전문가가 참여하는 공통 작업 환경을 제공함으로써 설계 효율성을 증진시킨다. 본 논문에서는 이러한 효용을 달성하기 위한 MDO 프레임웍(framework)을 제시하고 프레임웍 설계의 논리적 근저와 타당성을 밝힌다. 본 논문에서 제안하는 다분야 통합 최적화를 위한 분산형 지능 시스템인 DisMDO는 사용자가 GUI를 동해서 편리하게 다분야통합최적화 문제를 해결할 수 있도록 지원하며, 제공되는 스크립트 언어를 동해서도 이를 정의할 수 있도록 지원하여 일괄처리도 가능하도록 한다. 또한, 집중화된 데이터베이스를 관리하여 다분야 전문가들이 공통의 데이터를 안전하게 공유할 수 있도록 지원하며, 외부에서 제공되는 해석 도구나 최적화 모듈을 손쉽게 프레임웍에 통합시킬 수 있도록 하는 인터페이스 제작기(factory) 기능을 제공한다.ackscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.195-195
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• 2000

TFT-LCD의 제조공정은 박막층의 식각 공정에 대해 기존의 습식 공정을 대치하는 건식식각이 선호되고 있다. 건식 식각 공정은 반도체 공저에 응용되면서 소자의 최소 선폰(CD)이 감소함에 따라 유도결합셩 프라즈마를 비롯한 고밀도 플라즈마 이용한 플라즈마 장비 사용이 증가하는 추세이다. 여기에 평판디스플레이의 공정을 위해서는 대면적과 사각형 기판에 대한 균일도를 보장할 수 있는 고밀도의 균일한 플라즈마 유지가 중요하다. 본 실험에서는 자장강화된 유도결합형 플라즈마의 플라즈마 밀도 및 균일도를 살펴보고 TFT-LCD에 gate 전극으로 사용되는 Al-Nd 박막의 식각을 통하여 식각균일도와 식각속도 및 식각 선택도 등의 건식 식각 특성을 보고자 한다. 영구자석 및 전자석의 설치는 사각형의 유도결합형 플라즈마는 소형 영구자석을 배열하여 부착하였으며, 외부에는 chamber와 같이 사각형태의 전자석을 500mm$\times$500mm의 크기를 갖는 z축 방향의 Helmholtz형으로 제작하였다. 더. 영구자석 배열에 대해서는 자석간의 거리와 세기 변화를 조합하여 magnetic cusping의 변화를 주었으며 전자석의 세기는 전류값을 기준으로 변화시켜 보았다. 실험을 통하여 플라즈마 균일도를 5% 이하로 개선하고 이러한 균일도를 유지하며 플라즈마 밀도를 높일 수 있는 조건을 찾을 수 있었다. 이러한 적합화된 조건에서 저장강화된 유도결합형 프라즈마를 Al-Nd 박막 식각에 응용한 결과, Al-Nd의 식각속도 및 식각 선택도는 유도결합형 프라즈마에 비해 크게 증가하였으며, 식각균일도가 개선되는 것을 관찰하였다. 또한 electrostatic probe(Hiden, Analytical)를 이용하여 Al-Nd 식각에 사용된 반응성 식각가스에 대한 저장강화된 유도결합형 플라즈마의 특성 분석을 수행하였다.c recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.을 알 수 있

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.16 no.4
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• pp.397-410
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• 2018

When considering the long-term safety assessment of spent-nuclear fuel management, americium is one of the most radio-toxic actinides. Although spectroscopic methods are widely used for the study of actinide chemistry, application of those methods to americium chemistry has been limited. Herein, we purified $^{241}Am$ to obtain a highly pure stock solution required for spectroscopic studies. Quantitative and qualitative analyses of purified $^{241}Am$ were carried out using liquid scintillation counting, and gamma and alpha radiation spectrometry. Highly sensitive absorption spectrometry coupled with a liquid waveguide capillary cell and time-resolved laser fluorescence spectroscopy were employed for the study of Am(III) hydrolysis and oxalate (Ox) complexation. $Am^{3+}$ ions under acidic conditions exhibit maximum absorbance at 503 nm, with a molar absorption coefficient of $424{\pm}8cm^{-1}{\cdot}M^{-1}$. $Am(OH)_3(s)$ colloidal particles formed under near neutral pH conditions were identified by monitoring the absorbance at around 506-507 nm. The formation of ${Am(Ox)_3}^{3-}$ was detected by red-shifts of the absorption and luminescence spectra of 4 and 5 nm, respectively. In addition, considerable enhancements of the luminescence intensities were observed. The luminescence lifetime of ${Am(Ox)_3}^{3-}$ increased from 23 to 56 ns, which indicates that approximately six water molecules are replaced by carboxylate ligands in the inner-sphere of the Am(III). These results suggest that ${Am(Ox)_3}^{3-}$ is formed through the bidentate coordination of the oxalate ligands.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.14-19
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• 2002

The iron-doped perovskite La$_{0.67}$Sr$_{0.33}$Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$compound has been studied by x-ray diffraction, Mossbauer spectroscopy, and vibrating sample magnetometry. The single phase of the polycrystalline La$_{0.67}$Sr$_{0.33}$Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$powder has been prepared by a waterbased solgel method. Crystalline La$_{0.67}$Sr$_{0.33}$Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$was a rombohedral structure with lattice parameters a$_{0}$=5.480 $AA$, $alpha$=60.259$^{circ}$. Mossbauer spectra of La$_{0.67}$Sr$_{0.3}$/Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$have been taken at various temperatures ranging from 20 to 400 K. As the temperature increases toward the Curie temperature, T$_{c}$=375 K, the Mossbauer spectra show line broadening and the difference between the 1,6 and 3,4 linewidths is caused by the anisotropic hyperfine field fluctuation. The anisotropic field fluctuation of +H (P$_{+}$=0.80) is greater than -H (P$_{-}$=0.20). We calculated that the anisotropy energy was 124.01 erg/cm$^3$for T=150 K which is associated with the large line broadening.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.313-319
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• 2018

This study introduces a new investigation report on the microstructural and electrical property changes of $ZnO-Zn_2BiVO_6-Mn_3O_4$ (ZZMn), where 0.33 mol% of $Mn_3O_4$ and 0.5 mol% of $Zn_2BiVO_6$ were added to ZnO (99.17 mol%) as liquid phase sintering aids. $Zn_2BiVO_6$ contributes to the decrease of sintering temperatures by up to $800^{\circ}C$, and segregates its particles at the grain boundary, while $Mn_3O_4$ enhances ${\alpha}$, the nonlinear coefficient, of varistor properties up to ${\alpha}=62$. In comparison, when the sintering temperature is increased from $800^{\circ}C$ to $1,000^{\circ}C$, the resistivity of ZnO grains decreases from $0.34{\Omega}cm$ to $0.16{\Omega}cm$, and the varistor property degrades. Oxygen vacancy ($V_o^{\bullet}$) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be $ZnO/Zn_2BiVO_6$-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under $900^{\circ}C$. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.