• Title/Summary/Keyword: $\alpha$-$Al_2$$O_3$

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Performance Evaluation of Selective Coatings for Solar Thermal Collectors (태양열 집열기에 사용될 선택흡수막의 성능 평가)

  • Lee, Kil-Dong
    • Journal of the Korean Solar Energy Society
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    • v.32 no.4
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    • pp.43-50
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    • 2012
  • Metal-metal oxide (M-M oxide) cermet solar selective coatings with a double cermet layer film structure were deposited on the Al-deposited glass substrate by using a directed current (DC) magnetron sputtering technology. M oxide (CrO and ZrO) was used as the ceramic component in the cermets, and Cr and Zr used as the metallic components. In addition, black Cr (Cr-$Cr_2O_3$ cermet) solar selective coatings were deposited on the Ni-plated Cu substrate by using a electroplating method for comparison. The thermal stability tests were carried out for performance evaluation of solar coatings. Reflectance measurements were used to evaluate both solar absorptance(${\alpha}$) and thermal emittance (${\epsilon}$) of the solar coatings before and after thermal testing by using a spectrometer. Optical properties of optimized cermet solar coatings were ${\alpha}{\simeq}0.94-0.96$ and ${\epsilon}{\simeq}0.1$ ($100^{\circ}C$). The results of thermal stability test of M-M oxide solar coatings showed that the Cr-CrO cermet solar selective coatings were more stable than the Zr-ZrO cermet selective coatings at temperature of both $400^{\circ}C$ in air and $450^{\circ}C$ in vacuum. The black Cr solar selective coatings were degraded in air at temperature of $400^{\circ}C$. The main optical degradation modes of these coatings were diffusion of metal atoms, and oxidation.

The Study of Opto-electric Properties in EL Device with PMN Dielectric Layer (PMN 계 유전체 적용 EL 소자의 광전특성 연구)

  • Kum, Jeong-Hun;Han, Da-Sol;Ahn, Sung-Il;Lee, Seong-Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.776-780
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    • 2009
  • In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

A Case of Interstitial Pneumonitis developed by Interferon-${\alpha}$ Treatment for Chronic Hepatitis C (만성 C형 간염 환자에서 Interferon-${\alpha}$를 투여중 발생한 간질성 폐렴 1예)

  • Yoon, Jong Goo;Ahn, Joong Hyun;Ko, Seung Hyeon;Lee, Hyun Seoung;Kwon, Soon Seog;Kim, Young Kyoon;Moon, Hwa Sik;Park, Sung Hak;Song, Jeong Sup
    • Tuberculosis and Respiratory Diseases
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    • v.43 no.4
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    • pp.637-644
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    • 1996
  • Interstitial pneumonitis associated with interferon alpha therapy for chronic hepatitis C was first describe6 in 1994 by Kazoo et al In Japan. The mechanism of interstitial pneumonitis developed by interferon alpha was still unknown but immunologic, allergic of direct lung toxicity were suggested. We experienced a case of interstitial pneumonitis developed during interferon alpha therapy for chronic hepatitis C in a 52-year-old male patient. He was treated with 6 million units of interferon alpha intramuscularly 3 times per week for 4 weeks and noted progressive dyspnea and cough. These symptoms were subsided after 6 weeks' discontinuation of interferon alpha therapy. And so, he was retreated with 3 million units of interferon alpha 3 times per week for 8 weeks and felt dyspnea again. He was admitted to our hospital for further evaluation of progressive dyspnea. Arterial blood gas(ABG) values were $PaO_2$ 90.7 mmHg and $PaCO_2$ 31.9 mmHg, and antinuclear antibody(ANA) was negative. A chest X-ray film revealed diffuse reticulo-nodular shadows in bilateral lung fields, suggesting a diagnosis of interstitial pneumonitis. A marked increase in lymphocyte count and suppressor T cell were observed in bronchoalveolar lavage(BAL) fluid. Lymphocyte stimulation test with interferon alpha was positive. Interstitial pneumonitis was confirmed by transbronchial lung biopsy. After discontinuation of interferon alpha, we gave oral steroid in the condition that clinical symptoms were being improved gradually.

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Surface characteristics and bioactivity of minocycline-treated Ti-6Al-4V alloy

  • Lee, Jung-Hyuk;Sun, Young-Gon;Na, Eui-Ri;Moon, Jong-Wook;Kim, Young-Joon
    • Oral Biology Research
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    • v.42 no.4
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    • pp.187-197
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    • 2018
  • Chemical agents such as minocycline (MC) and citric acid (CA) were suggested in the treatment of contaminated implant surface. In this study, MC-HCl treatment was performed to enhance surface characteristics of titanium alloy surface. The purpose of this study was to assess the characteristics and the biocompatibility of Ti-6Al-4V surface treated by MC. Alpha-beta titanium alloy (Ti-6Al-4V) samples were prepared and they were divided into 6 groups according to chemical concentration and treatment time. These groups include 1) group I, non-treated smooth titanium alloy; 2) group II, MC 1.5 mg/mL for 1 hour; 3) group III, MC 1.5 mg/mL for 24 hours; 4) group IV, MC 15 mg/mL for 10 minutes; 5) group V, MC 100 mg/mL for 5 minutes; 6) group VI, pH1 CA for 3 minutes. The analysis of the surface characteristics of MC-treated titanium alloy was executed using scanning electron microscopy, roughness test, and X-ray photoelectron spectroscopy (XPS). Cell adhesion and MTT assay was done using MC3T3 cell. Titanium surfaces treated with MC indicated a more smoothened surface microstructure. For group II and III, the new peaks of rutile TiO2 were found. Group II and V have more basic group of Ti-OH form in XPS. In MTT assay, all MC-treated groups showed significantly higher cell viability compared to control. The surface roughness, crystal structure, surface hydrophilicity, cell viability of smooth titanium surface was improved by MC treatment. Compared with the control experiment and CA-treated group, smooth titanium surface treated with MC showed improved surface characteristics and cell biocompatibility.

Performance of OLED devices with the surface characteristics of TCO thin films (투명전도성 박막의 표면 특성에 따른 OLED 소자의 특성)

  • Lee, Bong-Kun;Lee, Yu-Lim;Lee, Kyu-Mann
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.313-313
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    • 2009
  • OLED 소자는 직접발광, 광시야각, 그리고 빠른 응답속도 때문에 동영상에 적합하여 최근 각광받고 있는 디스플레이장치 중의 하나이다. OLED 소자의 양극재료로는 높은 광투과율과 $\sim10^{-4}{\Omega}\;cm$ 수준의 낮은 전기 비저항을 갖는 ITO (Sn-doped $In_2O_3$)가 널리 사용되고 있다. 하지만 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 액정디스플레이의 투명전극으로 사용될 경우 $400\;^{\circ}C$정도의 높은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 반면에 Al이 도핑 된 ZnO (AZO)박막은 넓은 밴드갭 (3.37eV)와 400nm에서 700nm 사이의 가시광 영역에서 80% 이상의 우수한 투과성을 지니고 있다. 특히 Al이 도핑된 ZnO는 박막의 전기적 특성이 크게 향상되어 디스플레이나 태양전지로의 응용이 가능하다. 또한 비교적 낮은 비용과 플라즈마에서의 안정성, 무독성, 그리고 전기전도성과 같은 많은 이점이 있다. 그 결과 AZO 박막은 ITO기판을 대안하는 지원물질로 활발히 연구가 진행되고 있다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기에 따른 OLED 소자의 특성을 분석하였다. ITO와 AZO 박막은 챔버 내 다양한 가스 분위기(Ar, Ar+$O_2$ and Ar+$H_2$)에서 R.F Magnetron Sputtering방법으로 증착하였다. TCO 박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석하였다. 광학적 투과도와 박막의 두께는 ultraviolet spectrophotometer (Varian, cary-500)와 surface profile measurement system으로 각각 측정하였다. 면저항 charge carrier 농도, 그리고 TCO 박막의 이동도와 같은 전기적특성은 four-point probe와 hall effect measurement(HMS-3000)로 각각 측정하였다. TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 화학에칭 하였다. 미세사이즈 패턴 마스크가 사용되었으며 에칭의 깊이는 에칭시간에 따라 조절하였다. TCO 박막의 표면 형태는 FESEM과 AFM으로 관찰하였다. 투명전극으로 사용되는 ITO 및 AZO 기판 상용화를 위해 ITO 및 AZO 기판 위에 ${\alpha}$-NPB, Alq3, LiF, Al 의 순서로 증착 및 패터닝함으로써 OLED 소자를 제작하였다. 전류밀도와 전압 그리고 발광휘도와 전압과 같은 전기적 특성은 spectrometer(minolta CS-1000A)를 이용하여 측정하였다.

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Plasma Etching Characteristics of Sapphire Substrate using $BCl_3$-based Inductively Coupled Plasma ($BCl_3$ 계열 유도결합 플라즈마를 이용한 사파이어 기판의 식각 특성)

  • Kim, Dong-Pyo;Woo, Jong-Chang;Um, Doo-Seng;Yang, Xue;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.363-363
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    • 2008
  • The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

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Effect of Annealing Temperature on the Properties of $\beta$ -SiC-Ti $B_2$ Electrocondutive Ceramic Composites by Spray Dry (Spray Dry한 $\beta$-SiC-Ti $B_2$ 도전성 세라믹 복합체의 특성에 미치는 Annealing 온도)

  • 신용덕;주진영;최광수;오상수;서재호
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.8
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    • pp.335-341
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    • 2003
  • The composites were fabricated respectively 61vo1.% $\beta$ -SiC and 39vo1.% Ti $B_2$ spray-dried powders with the liquid forming additives of l2wt% $Al_2$ $O_3$$Y_2$ $O_3$ by pressureless annealing at 1$700^{\circ}C$, 175$0^{\circ}C$, 180$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$ -SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and 4.4Mpaㆍ $m^{\frac{1}{2}}$ for composites by pressureless annealing temperature 1$700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 8.09${\times}$10$^{-3}$ ㆍcm for composite by pressureless annealing temperature 1$700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

Electronic state calculation of ceramics by $DV-X\;{\alpha}$ cluster method

  • Adachi, Hirohiko
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1994.11a
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    • pp.1-1
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    • 1994
  • ;The electronic state calculations for various types of ceramic materials have beell performed by the use of $DV-X\;{\alpha}$ cluster method. The molecular orbital levels and wave functions for model clusters have been computed to study the electronic properties ami chemical bonding of the ceramics. For ${\beta}-sialon(Si_{6-z}Al_zO_zN_{8-z})$ which is a high temperature structural material based on ${\beta}-Si_3N_4$, we have made model cluster calculations to estimate the strength of chemical bonding between atoms by the Mulliken population analysis. It is found that the covalent bonding between Si and N atoms is very strong in pure ${\beta}-Si_3N_4$, but the covalency around solute atom is considerably weakened when Si atom is substituted by AI. This tendency is enhanced by an additional substitution of oxygen atom for N. The result calculated can well explain the experimental data of changes in mechanical properties such as the reductions of Young's modulus and Vickers hardness with increment of z-value in ${\beta}-sialon$. Various model clusters for transition metal oxides which show many interesting physical and chemical properties have also been calculated. High-valent perovskite-type iron oxides EMFe0_3E(M=Ca and Sr) possess very interesting magnetic and chemical properties. In these oxides, iron exists as $Fe^{4+}$ state, but the experimental measurement of Mossba~er effect suggests that disproportionation $2Fe^{4+}=Fe^{3+}+Fe^{5+}$ takes place for $CaFe0_3$ at low temperatures. The model cluster calculations for these compounds indicated the existence of considerably strong covalent bonding of Fe-O. The calculations of hyperfine interaction at iron neucleus show very good agreement with the experimental Mossbauer measurements. The result calculated also implies that the disproportionation reaction is strongly possible by assuming the quenching of breathing phonon mode at low temperatures.tures.

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Bone Replacement and Grafting with a Biologically Active Ceramic Composite

  • McGee, Thomas Donald
    • The Korean Journal of Ceramics
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    • v.7 no.1
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    • pp.41-44
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    • 2001
  • A composite of $Ca_3$(PO$_4$)$_2$ and MgAl$_2$O$_4$ spinel is biologically active and has enduring strength. Its strength depends on the spinel phase. The flaws in the spinel depend on the grain size of the calcium phosphate phase and are not altered by dissolution. The calcium phosphate, ${\alpha}$ tri-calcium phosphate, controls the tissue response. Bone bonds to the implant. A design for a bone graft as a replacement for a section of the diaphysis of a canine femur provides for tensile, compressive, torsional and bending load; and for the physiological processes of bonding and remodeling. A bone plate, used to stabilize the implant at time of surgery was removed after about one year. Over seven years of service have been achieved without internal or external fixation.

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STUDY OF MULTILAYER STRUCTURE USING X-RAY DOUBLE CRYSTAL DIFFRACTION

  • Wu, Yunzhong;Xu, Xueming;Wang, Weiyuan
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.30-33
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    • 1995
  • By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

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