• Title/Summary/Keyword: $[Cu(hfac)]_2(HD)$

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Deposition of copper dots with new copper precursors (새로운 Copper 전구체를 이용한 구리점 증착)

  • Kang, Sang-Woo;Seong, Dae-Jin;Shin, Yong-Hyoen;Rhee, Shi-Woo;Yun, Ju-Young
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.485-492
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    • 2006
  • Two new copper(I) complexes with organic ligands, $[Cu^I(hfac)]_2(DVTMSO)$ and $[Cu^I(hfac)]_2(HD)$ (hfac=hexafluoroacetylacetonate, DVTMSO=1,2-divinylte-tramethyl-disiloxane, HD=1,5-hexadiene) were synthesized and used for copper metal-organic chemical vapor deposition. In these compounds, two Cu(hfac) fragments are bonded by one neutral ligand forming unusual structure with respect to other Cu(I) complexes. The compounds exhibited relatively high volatility and stability when compared to other copper(I) precursors. By using the reported compounds as precursors, a continuous Cu layer was not formed but the Cu islands were only observed. And the shape and size of Cu islands are significantly changed as a function of the substrate temperature.