• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.23-29
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• 2006

Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

• Spatial Information Research
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• v.14 no.1 s.36
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• pp.129-150
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• 2006

Mineral potential mapping is an important procedure in mineral resource assessment. The purpose of this study is to analyze mineral potential using weight of evidence model and a Geographic Information System (GIS) environment to identify areas that have not been subjected to the same degree of exploration. For this, a variety of spatial geological data were compiled, evaluated and integrated to produce a map of potential mineral in the Gangreung area, Korea. for this, a spatial database considering mineral deposit, topographic, geologic, geophysical and geochemical data was constructed for the study area using a GIS. The used mineral deposits were non-metallic(Kaolin, Porcelainstone, Silicastone, Mica, Nephrite, Limestone and Pyrophyllite) deposits of sedimentary type. The factors relating to mineral deposits were the geological data such as lithology and fault structure, geochemical data, including the abundance of Al, As, Ba, Ca, Cd, Co, Cr, Cu, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Si, Sr, V, Zn, $Cl^-,\;F^-,\;{PO_4}^{3-},\;{NO_2}^-,\;{NO_3}^-,\;SO_{42-}$, Eh, PH and conductivity and geophysical data, including the Bouguer and magnetic anomalies. These factors were used with weight of evidence model to analyze mineral potential. Probability models using the weight of evidence were applied to extract the relationship between mineral deposits and related factors, and the ratio were calculated. Then the potential indices were calculated by summation of the likelihood ratio and mineral potential maps were constructed from Geographic Information System (GIS). The mineral potential maps were then verified by comparison with the known mineral deposit areas. The result showed the 85.66% in prediction accuracy.

• Economic and Environmental Geology
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• v.23 no.4
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• pp.369-381
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• 1990

Most of significant ore deposits in South Korea such as the Sangdong W - Mo, the Yeonhwa Pb-Zn and the Geodo Cu-Fe skarn ore deposits occur at the southern limb of the Hambaeg syncline in the Taebaeg Basin. The mineralization took place in the interbedded limestone of the Myobong Formation and the Pungchon limestone of the Great Limestone Group of the Cambrian age, generally striking E-W and dipping 25-30 degrees north. There are no outcrops of the skarn-type orebody at the northern limb of the syncline. In order to find a clue of a possible hidden orebody localized at the limestones in the northern limb, a lithogeochemical exploration by using carbon isotope and some elements such as Si, Ca, Fe and Al at the Sangdong Mine area has been attempted as for a modelling study. For this study, 45 samples from the Pungchon limestone which do not show any megascopic indication of mineralization have been taken in both the mineralized zone and the unminerallized zone at the Sangdong Mine area. Analytical data show that there are big differences in the contents of CaO and $Al_2O_3$ between the Pungchon limestone of the mineralized zone and that of the unmineralized zone. Carbon isotope data exhibit that ${\delta}^{13}C$ values of the Pungchon limestone in the mineralized zone are highter than those in the unmineralized zone. The difference in the analytical values of CaO, $Al_2O_3$ and the carbon isotope between the mineralized and the unmineralized zones is as follows ; Unminerallized zone Mineralized zone CaO 51.3% 43.5% $Al_2O_3$ 0.6% 2.4% ${\delta}^{13}C$ -0.39 permil -0.56 permil $Fe_2O_3$ 0.9% 1.4% $SiO_2$ 3.0% 2.4% The decrease in the Si content of the Pungchon limestone in the mineralized zone is contrary to the result of the previous study (Moon, 1987). On the basis of identification of the increase in the Al content of the limestone in the mineralized zone, it could be deduced that the decrease in the Si content of the Pungchon limestone might be due to the result of increase in the alteration products mainly occurred along fracture-system such as joint cracks or minor faults and that the phenomena shown by the Si and Al content in the mineralized zone might be derived from the thermal effect of granite extended mineralizing activity to the overlied limestone on the surface. Higher mean values of Fe and Al as well as lower mean values of carbon content and the ${\delta}^{13}C$ than mean values of those in the Pungchon limestone at the northern limb of the Hambaeg Syncline may be applicable in exploration for blind orebodies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.68-71
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• 2002

The electromagnetic properties and thermal behavior of ferrite cores used in the blocking filter for PLC were investigated as a function of additives. The highest density of 4.98 $g/cm^2$ and permeability of 8221 were obtained to the specimen added $MoO_3$ 400 ppm, $SiO_2$ 100 ppm and CaO 200 ppm since the microstructures were compacted through reduction of pores in the specimen. The permeability was increased up to 13094 at $110^{\circ}C$ with increasing temperature of specimen, however, it was decreased precipitously to under 100 over $110^{\circ}C$. The exothermic behavior was observed that the temperature of specimens became $102^{\circ}C$ at 1MHz. In the consequence, the ferrite core developed by this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to $93^{\circ}C$ in the range of 10kHz to 450kHz bandwidth qualified for PLC.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.278-279
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• 2012

최근 들어 세계적인 고유가 행진과 화석연료 고갈에 대응하기 위하여 대체 에너지원 발굴에 대한 필요성이 높아지고 있다. 그 중 CIGS 박막 태양전지는 미래 신재생 에너지 자원의 가장 유망한 후보군 중 하나이다. 기존의 Si 기반의 태양전지의 경우 시간경과에 따른 효율 저하, 높은 재료비, 복잡한 공정으로 인하여 대량생산이 힘든 단점을 가지고 있다. 반면 박막 태양전지의 경우 생산 원가를 낮출 수 있는 태양전지 제조기술로서는 2세대 태양전지로 불리우며, 에너지 변환 효율과 생산 원가에서 우월성을 가진다. 그리고 이러한 CIGS 박막 태양전지를 단일 CIGS 타겟을 이용하여 스퍼터링 공정으로 제작하면 기존에 사용되었던 동시 증발법에 비해서 간단하고 대면적 코팅 및 대량 생산이 가능하다. 본 연구에서 사용된 기판으로는 $25{\times}25mm$ 크기의 Soda Lime Glass (SLG) 위에 DC 마그네트론 스퍼터링 공정으로 Mo가 $1{\mu}m$ 증착된 시편을 이용하여, 2 inch 단일 CIGS 타겟 (MATERION, CIGS Target 25-17.5-7.5-50 at%)을 기판 가열하여 증착하였다. RF 파워는 80 W, 기판 온도는 RT, 100, 200, 300, $400^{\circ}C$로 가열 후 증착하였고, CIGS 박막의 두께는 약 $1{\mu}m$로 일정하게 하였다. CIGS/Mo 박막의 파워별 미세구조 분석을 위해 X-ray Diffraction (XRD, BRUKER GADDS)로 측정하였으며, 박막의 결정립 크기를 확인하기 위해 Field Emission Scanning Electron Microscopy (FE-SEM, HITACHI)을 사용하여 측정하였다. 조건별 박막의 조성 분석 및 표면조도는 Energy Dispersive X-ray Spectroscopy (EDS, HORIBA 7395-H)와 Atomic Force Microscopy (AFM)을 이용하여 각각 평가하였다. 마지막으로 광학적 특성을 평가하고 박막의 밴드갭 에너지를 계산하기 위해서 190 nm에서 1,100 nm의 영역 대에서 자외선 광학 측정기(UV-Vis, HP-8453, AGLIENT)로 투과도를 측정하여 밴드갭 에너지를 계산하였다. 증착된 CIGS 박막은 기판 온도가 증가함에 따라 결정립 크기가 커지는 경향을 보였다. 이는 기판 상에 도달한 스퍼터 원자의 확산 에너지 증가로 인한 것으로 생각되어진다. 또한, 기판온도에 따른 결정립 성장 변화는 4성분계의 박막의 조성 및 핵생성 밀도와 관련되어 설명되어질 것이다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Korean Journal of Food Science and Technology
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• v.40 no.4
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• pp.424-429
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• 2008

To investigate the acid tolerance characteristics of the acid-resistant mutant, Leuconostoc paramesenteroides P-200, as a kimchi starter, this study examine proton permeability, ATPase activity, glycolysis activity, $Mg^{2+}$ release, and membrane fatty acid composition, and compared the data to that of its wild-type, L. paramesenteroides LP-W. In the proton permeability experiment, the LP-W and P-200 strains' average maximum half-time $(t_{1/2})$ values for pH equilibration through the cell membrane were approximately 5.7 and 9.3 min in 150mM KCl solution, and 4.2 and 8.3 min in 3% NaCl solution, respectively. Their values and pH levels for maximal specific ATPase activity showed that P-200 had greater activity than LPW. And the results of pH-dependent glycolysis activity showed that P-200 had greater activity than LP-W. Furthermore, after 2 hr at pH 4.0, LP-W and P-200 had percent magnesium release values of approximately 12% and 34%, respectively. A comparison of their membrane fatty acid compositions indicated that C18 and cyclo-C19 were the major different fatty acids between the two strains, and their contents of C18 and cyclo-C19 were 2.5% and not detected, respectively, in LP-W, and 6.4% and 11.4%, respectively, in P-200. These results indicate that the P-200 strain has significantly improved acid tolerance as compared to its wild type, LP-W.

• Journal of Radiation Protection and Research
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• v.23 no.1
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• pp.33-47
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• 1998

Using a combination of an X-ray generator Installed in radiation calibration laboratory of Korea Atomic Energy Research Institute (KAERI) and a series of 8 radiators and filters described in ISO-4037, monoenergetic fluorescent X-rays from 8.6 keV to 75 keV were produced. This fluorescent X-rays generated by primary X-rays from radiator were discriminated $K_{\beta}$ lines with the aid of filter material and the only $K_{\alpha}$ X-rays were analyzed with the high purity Ge detector and portable MCA. The air kerma rates were measured with the 35 co ionization chamber and compared with the calculational results, and the beam uniformity and the scattered effects of radiation fields were also measured. The beam purities were more than 90 % for the energy range of 8.6 keV to 75 keV and the air kerma rates were from 1.91 mGy/h (radiator : Au, filter : W) to 54.2 mGy (radiator : Mo, filter : Zr) at 43 cm from center of the radiator. The effective area of beam at the measurement point of air kerma rates was 12 cm ${\times}$ 12 cm and the influence of scattered radiation was less than 3 %. The fluorescent X-rays established in this study could be used for the determination of energy response of the radiation measurement devices and the personal dosemeters in low photon energy regions.