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1 B. Zhou, B. Tang, C. Zhang, C. Qin, Z. Gu, Y. Ma, T. Zhai, and J. Yao, Nat. Commun. 11, 1174 (2020)./   DOI View Article
2 J.-W. Lee, J.-W. Jeong, J.-T. Kang, J.-W. Kim. S. Park, H. Jeon, E. Go, Y. Ahn, D.-J. Kim and Y.-H. Song, IEEE Trans. Electron Devices 67(3), 1192 (2020)./   DOI View Article
3 S. T. Yoo and K. C. Park, ACS Omega 5, 15601-15605 (2020)./   DOI View Article
4 C. R. Inscoe, C. Puett, A. J. Billingsley, O. Zhou, J. Lu and Y. Z. Lee, Proc. Of SPIE 11312, 1131224 (2020)/ View Article
5 D. Spronk, Y. Luo, C. Inscoe, A. Billingsley, Y. Z. Lee, J. Lu and O. Zhou, Proc. Of SPIE 11312, 1131237 (2020)/ View Article
6 S. T. Han, IEEE Trans. Plasma Sci. 48(9), 3238 (2020)./   DOI View Article
7 K. Beom, M. Kim, H. Lee, H. J. Kim, S. -Y. Cho, H. H. Lee, C. J. Kang, and T. -S. Yoon, Nanotechnology 31(26), 265201 (2020)./   DOI View Article
8 D. Dev, A. Krishnaprasad, M. S. Shawkat, Z. He, S. Das, D. Fan, H. -S. Chung, Y. Jeong, and T. Roy, IEEE Elec. Dev. Lett. 41(6), 936 (2020)./   DOI View Article
9 J. W. Park, B. H. Kang, H. J. Kim, Adv. Funct. Mater. 30, 1904632 (2020)./   DOI View Article
10 D. Kumar, T. C. Gomes, N. Alves, L. Fugikawa-Santos, G. C. Smith and J. Kettle, IEEE Sens J. 20, 7532 (2020)/   DOI View Article