MRR model for the CMP Process Considering Relative Velocity
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김기현
(서울대학교 기계항공공학부 미세성형연구실)
오수익 (서울대학교 기계항공공학) 전병희 (인덕대학) |
1 |
Material Removal Mechanism in chemical Mechanical Polishing:Theory and Modeling
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DOI ScienceOn |
2 |
A Mechanical Model for Erosion in Copper Chemical-Mechanical Polishing
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3 |
Probable role of abrasion in chemo-mechanical polishing of tungsten
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DOI ScienceOn |
4 |
A micro-contact and wear model for CMP of silicon wafers
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DOI ScienceOn |
5 |
A Chemical Mechanical polishing model incorporating both the chemical and mechanical effects
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6 |
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7 |
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8 |
A model for mechanical wear and abrasive particle adhesion during the CMP process
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DOI ScienceOn |
9 |
Three-Dimensional Wafer-Scale Copper Chemical-Mechanical Planarization Model,
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10 |
Hydrodynamic Analysis of Chemical Mechanical Polishing Process
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DOI ScienceOn |
11 |
半導體平垣化 CMP技術
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12 |
Tribology Analysis of Chemical-Mechanical Polishing
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DOI ScienceOn |
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