1 |
M. Chhowalla et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nature Chem. 5, 263 (2013).
DOI
|
2 |
Q. H. Wang, K. K. Zadeh, A. Kis, J. N. Coleman, and M. Strano, Electronics and optoelectronics of twodimensional transition metal dichalcogenides, Nature Nanotechnol. 7, 699 (2012).
DOI
|
3 |
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer transistors, Nature Nanotechnol. 6, 147 (2011).
DOI
|
4 |
J. A. Wilson and A. D. Yoffe, The transition metal dichalcogenides discussion and interpretation of optical, electrical and structural properties. Adv. Phys. 18, 193 (1969).
|
5 |
S. O. Kasap, Principles of Electronic Materials and Devices 2nd ed. McGraw Hill (2002).
|
6 |
R. C. Jaeger, Introduction to Microelectronic Fabrication 2nd ed. Prentice Hall (2002).
|
7 |
R. S. Muller, T. I. Kamins, and M. Chan, Device Electronics for Integrated Circuits 3rd ed. Wiley (2003).
|
8 |
L. Solymar and D. Walsh, Electrical Properties of Materials 6th ed., Oxford Univ. Press (1998)
|
9 |
B. Radisavljevic and A. Kis, Mobility engineering and a metal-insulator transition in monolayer , Nature Mater. 12, 815 (2013).
DOI
|
10 |
E. Revolinsky and D. Beerntsen, Electrical properties of the and systems. J. Appl. Phys. 35, 2086 (1964).
DOI
|
11 |
S. I. Kim et al. Metallic conduction induced by direct anion site doping in layered , Sci. Rep. 6, 19733 (2016).
DOI
|
12 |
D. H. Keum et al. Bandgap opening in few-layered monoclinic , Nature Phys. 11, 482 (2015).
DOI
|
13 |
S. Cho et al. Phase patterning for ohmic homojunction contact in , Science, 349, 625 (2015).
DOI
|
14 |
Y. Cui, X. Duan, J. Hu, and C. M. Lieber, Doping and electrical transport in silicon nanowires, J. Phys. Chem. B, 104, 5213 (2000).
|
15 |
Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Experimental observation of the quantum Hall effect and Berry's phase in graphene, Nature, 438, 201 (2005).
DOI
|
16 |
J. H. Davies, The Physics of Low-Dimensional Semiconductors, Cambridge Univ. Press (1993).
|
17 |
H. L. Stomer, R. Dingle, A. C. Gossard, W. Wiegmann, and M. D. Struge, Two-dimensional electron gas at a semiconductor-semiconductor interface, Solid State Commun. 29, 705 (1979).
DOI
|
18 |
A. Ohtomo and H. Y. Hwang, A high-mobility electron gas at the heterointerface, Nature, 427, 324 (2004).
|
19 |
J. Mannhart and D. G. Schlom, Oxide interfaces - An opportunity for electronics, Science, 327, 1607 (2010).
DOI
|
20 |
K. S. Novoslov et al. Electric field effect in atomically thin carbon films, Science, 306, 666 (2004).
DOI
|
21 |
M. Xu, T. Liang, M. Shi, and H. Chen, Graphenelike two-dimensional materials, Chem. Rev. 113, 3766 (2013).
DOI
|