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http://dx.doi.org/10.4191/KCERS.2005.42.8.567

Microstructure Development of Spark Plasma Sintered Silicon Carbide with Al-B-C  

Cho, Kyeong-Sik (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Lee, Kwang-Soon (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Lee, Hyun-Kwuon (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology)
Lee, Sang-Jin (Department of Advanced Materials Science and Engineering, Mokpo National University)
Choi, Heon-Jin (School of Advanced Materials Engineering, Yonsei University)
Publication Information
Abstract
Densification of SiC powder with additives of total amount of2, 4, 8 $wt\%$ Al-B-C was carried out by Spark Plasma Sintering (SPS). The unique features of the process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. The heating rate and applied pressure were kept at $100^{\circ}C/min$ and 40 MPa, while the sintering temperature and holding time varied from 1700 - $1800^{\circ}C$ for 10 - 40 min, respectively. The SPS-sintered specimens with different amount of Al-B-C at $1800^{\circ}C$ reached near-theoretical density. The $3C{\rightarrow}6H,\;15R{\rightarrow}4H$ phase transformation of SiC was enhanced by increasing the additive amount. The microstructure of SiC sintered up to $1750^{\circ}C$ consisted of fine equiaxed grains. In contrast, the growth of large elongated grains in small matrix grains was shown in sintered bodies at $1800^{\circ}C$, and the plate-like grains interlocking microstructure had been developed by increasing the holding time at $1800^{\circ}C$. The grain growth rate decreases with increasing amount of Al-B-C in SiC starting powder, however, the both of volume fraction and aspect ratio of large grains in sintered body increased.
Keywords
SiC; Spark plasma sintering; Rapid densification; Interlocking microstructure;
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