Effects of Oxygen Pressure on the Crystallization Behavior and Electrical Properties of YMnO3 Thin Films |
Cheon, Chae-Il
(Department of Materials Science and Engineering, Hoseo Chungnam)
Yun, Kwi-Young (Department of Materials Science and Engineering, Hoseo Chungnam) Kim, Jeong-Seog (Department of Materials Science and Engineering, Hoseo Chungnam) Kim, Jin-Hyeok (Department of ceramic Engineering, Chonnam National University) |
1 |
Epitaxially grown YMnO₃Film: New Candidate for Nonvloatile Memory Devices
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DOI ScienceOn |
2 |
Ferroelectric Properties of YMnO₃Thin Films Prepared by Chemical Solution Deposition
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DOI ScienceOn |
3 |
Growth Mechanism of YMnO₃ Film as a New Candidate for Nonvolatile Memory Devices
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DOI ScienceOn |
4 |
Preparation of Ferrolelectric YMnO₃Thin FIlms for Nonvolatile Momory Devices by Metalorganic Chemical Vapor Deposition
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DOI ScienceOn |
5 |
Memory Window of Hightly c-axis Oriented Ferroelectric YMnO₃Thin Films
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6 |
Ferroelectric Propetries of c-oriented YMnO₃Films Deposited on Si Substrates
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DOI ScienceOn |
7 |
Ferroelectricity of YMnO₃Thin Films Prepared via Solution
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DOI |
8 |
Non-ohmic Behavior and Switching Phenomena in YMnO₃based Ceramic Materials
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DOI ScienceOn |
9 |
Ferroelectric Characterization of Highly (0001)-oriented YMnO₃Thin Films Grown by Chemical Solution Deposition
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DOI ScienceOn |