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http://dx.doi.org/10.4191/KCERS.2002.39.9.840

The Fabrication of ITO Thin-film O3 Gas Sensors Using R.F. Magnetron Sputtering Method and their Characterization  

Kwon, Jung-Bum (Department of Materials Science and Engineering, The University of Seoul)
Jung, Kyoung-Keun (Department of Materials Science and Engineering, The University of Seoul)
Lee, Dong-Su (Inostek Inc.)
Ha, Jo-Woong (Inostek Inc.)
Yoo, Kwang-Soo (Department of Materials Science and Engineering, The University of Seoul)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.9, 2002 , pp. 840-845 More about this Journal
Abstract
As an ozone gas sensor, the semiconductor gas sensor which is cheap, portable and simple in use and has a high sensitivity and an excellent selectivity, has been known as an alternative. In the present study, ITO ($In_2O_3 95%,\;SnO_2$ 5%) thin films were deposited on the alumina substrate by using R.F. magnetron sputtering method. The substrate temperature was 300$^{\circ}C$ and 500$^{\circ}C$, respectively and then some specimens were annealed at 500$^{\circ}C$ for 4h in air. ITO gas-sensing films formed crystallines before and after annealing. As results of gas sensitivity measurements to an ozone gas, the sensor deposited at 300$^{\circ}C$ and then annealed has the highest sensitivity (sensible below 1 ppm). As the operating temperature increased gradually, the sensitivity decreased but the response time and stability improved.
Keywords
R.F. magnetron sputtering method; ITO thin films; Ozone gas sensors;
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