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http://dx.doi.org/10.9723/jksiis.2013.18.5.019

High Speed TCAM Design using SRAM Cell Stability  

Ahn, Eun Hye (경북대학교 전자공학과)
Choi, Jun Rim (경북대학교 전자공학과)
Publication Information
Journal of Korea Society of Industrial Information Systems / v.18, no.5, 2013 , pp. 19-23 More about this Journal
Abstract
This paper deals with the analysis of 6T SRAM cell stability for Hi-speed processing Ternary Content Addressable Memory. The higher the operation frequency, the smaller CMOS technology required in the designed TCAM because the purpose of TCAM is high-speed data processing. Decrease of Supply voltage is one cause of unstable TCAM operation. Thus, We should design TCAM through analysis of SRAM cell stability. In this paper we propose methodology to characterize the Static Noise Margin of 6T SRAM. All simulations of the TCAM have been carried out in 180nm CMOS process technology.
Keywords
TCAM; SRAM; Static Noise Margin; Write Margin; Read Margin;
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