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http://dx.doi.org/10.5762/KAIS.2014.15.3.1707

Analysis with Directional Solidification in Silicon Melting Process  

Cho, Hyun-Seob (Department of Electronics Engineering, Chungwoon University)
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.15, no.3, 2014 , pp. 1707-1710 More about this Journal
Abstract
This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. The activation analysis of metal impurities were also detected the total number of 10 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers.
Keywords
Uni-directional Solidification; Refinement; Multicrystalline Silicon; Solar Grade Silicon; Solidification Rate; Thermal Gradient; Stober process;
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