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http://dx.doi.org/10.5516/NET.01.2013.051

A SIMPLE METHOD TO CALCULATE THE DISPLACEMENT DAMAGE CROSS SECTION OF SILICON CARBIDE  

Chang, Jonghwa (Korea Atomic Energy Research Institute)
Cho, Jin-Young (Korea Atomic Energy Research Institute)
Gil, Choong-Sup (Korea Atomic Energy Research Institute)
Lee, Won-Jae (Korea Atomic Energy Research Institute)
Publication Information
Nuclear Engineering and Technology / v.46, no.4, 2014 , pp. 475-480 More about this Journal
Abstract
We developed a simple method to prepare the displacement damage cross section of SiC using NJOY and SRIM/TRIM. The number of displacements per atom (DPA) dependent on primary knock-on atom (PKA) energy was computed using SRIM/TRIM and it is directly used by NJOY/HEATR to compute the neutron energy dependent DPA cross sections which are required to estimate the accumulated DPA of nuclear material. SiC DPA cross section is published as a table in DeCART 47 energy group structure. Proposed methodology can be easily extended to other materials.
Keywords
Displacement Per Atom (DPA); Cross Section; Silicon Carbide; Compound Material;
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