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http://dx.doi.org/10.12656/jksht.2013.26.4.178

Evaluation of Fracture Strength of Silicon Die with Surface Condition by Ball Breaker Test  

Byeon, Jai-Won (Department of Materials Science & Engineering, Seoul National University of Science & Technology)
Publication Information
Journal of the Korean Society for Heat Treatment / v.26, no.4, 2013 , pp. 178-184 More about this Journal
Abstract
The effects of thickness and surface grinding condition on the fracture strength of Si wafer with a thickness under $100{\mu}m$ were investigated. Fracture strength was measured by ball breaker test for about 330 dies (size: $4mm{\times}4mm$) per each wafer. For statistical analysis of the fracture strength, scale factor was determined from Weibull plot. Ball breaker fracture strength was observed to increase with decreasing thickness of silicon die. For the silicon dies of different surface conditions, ball breaker fracture strength was high in the order of polished, ground (#4800), and ground (#320 grit) specimen. Probabilistic fracture strength (i.e., scale factor) increased with decreasing surface roughness of silicon die.
Keywords
Silicon die; Fracture strength; Ball breaker test; Surface condition; Weibull plot;
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1 T. K. Woo, Y. H. Kim, H. S. Ahn, and S. I. Kim : J. Microelectron. Packag. Soc., 16 (2009) 61.
2 M. K. Choi, and E. K. Kim : J. Microelectron. Packag. Soc., 15 (2008) 63.
3 Y. Desmond, R. Chong, W. E. Lee, and B. K. Lim : IEEE Inter. Society Conference on Thermal Phenomena (2004) 203.
4 ASTM C 1161-02C (1990).
5 J. D. Wu, C. Y. Huang and C. C. Liao : Microelectronics Reliab., 43 (2003) 269.   DOI   ScienceOn
6 H. H. Jiun and G. Omar : Microelectronics Reliab., 46 (2006) 836.   DOI   ScienceOn
7 Z. Chen, J. B. Han and N. X. Tan : Journal of Electronic Packaging, 125 (2003) 115.
8 Y. K. Min and J. W. Byeon : J. Microelectron. Packag. Soc., 18 (2011) 15.
9 J. N. Calata, J. G. Bai, X. Liu, S. Wen and G. Q. Lu : IEEE Transactions on Advanced Packaging, 28 (2005) 404.   DOI   ScienceOn
10 P. A. Wang : IEEE Proceedings of the Fourth World Conference on Photovoltaic Energy Conversion, (2006) 1179.
11 N. M. Lellan, N. Fan, S. Liu, K. Lau and J. Wu : ASME J Electron. Packag., 126 (2004) 110.   DOI   ScienceOn
12 J. Paul, B. Majeed, K. M. Razeeb, and J. Barton : Acta Materiallia, 54 (2006) 3991.   DOI   ScienceOn
13 M. Y. Tsai, and C. H. Chen : Microelectronics Reliab., 48 (2008) 933.   DOI   ScienceOn
14 P. H. DeHoff, K. J. Anusavice, and P. W. Hathcock : J. Dent. Res., 61 (1982) 1066.   DOI   ScienceOn
15 G. Omar, N. Tamaldin, M. R. Muhamad, and T. C. Hock : IEEE, Semiconductor Electronics Proceedings ICSE International Conference (2000) 147.