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http://dx.doi.org/10.5757/JKVS.2008.17.6.544

Improvement of PR Stripper Efficient and Change of Surface Hardness for HDI-PR Used by PLVA Method  

Kim, Soo-In (Department of Nano & Electronic Physics, Kookmin University)
Lee, Chang-Woo (Department of Nano & Electronic Physics, Kookmin University)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.6, 2008 , pp. 544-548 More about this Journal
Abstract
At the semiconductor industry, Photoresist(PR) strip progress has high cost and time consuming process. Accordingly, many research group have been focused on the shortening of the PR strip progress. But the replacements of newly developed materials rather than normally used strip have accompanied by cost consumption. Therefore, we suggested the Plasma Liquid-Vapor Activation (PLVA) method of general PR strip solution for saving the PR strip time and the high strip rate of PR residue. The PLVA method was very effective for PR strip progress. Also, the ion damaged PR(high dose implanted photoresist: HDI-PR) was almost impossible to strip. However, it was very difficult to characterize the change of chemical composition of HDI-PR between with and without PLVA method. Thus, physical properties of HDI-PR surface with and without PLVA method were measured by using the nano-indenter system.
Keywords
HDI-PR strip activation; Plasma liquid-vapor activation: PLVA; Nano-indenter system;
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Times Cited By KSCI : 1  (Citation Analysis)
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