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http://dx.doi.org/10.5757/JKVS.2007.16.3.210

Optical properties of Rare-Earth-Implanted GaN Epilayer  

Kim, Yong-Min (Department of Applied Physics, Dankook University)
Publication Information
Journal of the Korean Vacuum Society / v.16, no.3, 2007 , pp. 210-214 More about this Journal
Abstract
We have studied optical transitions of Gd-implanted GaN epilayers. Photoluminescence transition intensity at 590 nm at T=5 K diminishes and its center position moves to short avelength (blue shift) with increasing temperature up to 200 K. Above T=200 K, the transition intensity increases with increasing temperature while the center position remains the same. We believe that such anomalous optical transition behavior is due to the effect of rare-element in the semiconductor host material and lattice imperfection which was occurred during the implantation process well as.
Keywords
rare-earth elements; ion-implantation; GaN; photoluminescence; DMS;
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