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Adsorption of H Atoms on the Si(111)$4{\times}1$-In Surface  

Yu Sang-Yong (Department of Physics, Chungnam National University)
Lee Geun-Seop (Department of Physics, Inha University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.2, 2006 , pp. 139-144 More about this Journal
Abstract
Using scanning tunneling microscopy (STM) measurements, we studied the adsorption of hydrogen on the Si(111)$4{\times}1$-In surface at room temperature. The H atom features are found to be located between the two protrusions in one side of the $4{\times}1$ chain. The adsorbed H preferentially occupies one of the two zigzag In subchains, suggesting that the adsorption of H is influenced by the subsurface structure. The adsorbed H atom induces not only a localized distortion but also perturbs the distant region and results in a period-doubling modulations in the STM images. This H-induced perturbation differs from the Na-Induced perturbation on the same surface.
Keywords
Si(111); In; $4{\times}1$; Hydrogen adsorption; Scanning tunneling microscopy; Electronic perturbation;
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