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Failure Analysis and Solution of ESD for Amplifier Used in Telecommunication  

Hwang, Soon-Mi (Reliability Technology Research Center, Korea Electronic Technology Institute)
Jung, Young-Baek (Reliability Technology Research Center, Korea Electronic Technology Institute)
Kim, Chul-Hee (Reliability Technology Research Center, Korea Electronic Technology Institute)
Lee, Kwan-Hoon (Reliability Technology Research Center, Korea Electronic Technology Institute)
Publication Information
Journal of Applied Reliability / v.11, no.3, 2011 , pp. 251-265 More about this Journal
Abstract
Low-noise amplifier(LNA) is a component that amplifies the signal while lowering the noise figure of high-frequency signal. LNA holds a very important position in RF system so that it is widely used for telecommunication. Electro static discharge(ESD) is the most common cause of malfunction for low-powered components, such as Large Scale Integration and IC type LNA is weak in ESD. This thesis studies static effect of communication LNA. It analyzes ESD effect, which occurs within LNA circuit, and describes testing standard and methods. In order to find out LNA's susceptiblity to electro static, two well-recognized communication IC type LNA models were selected to be tested. Then static-induced malfunction was carefully analyzed and it suggests architectural problem and improvement from the LNA's ESD point of view.
Keywords
Low-noise amplifier(LNA); ESD of LNA; Test of LNA; Failure analysis of LNA;
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  • Reference
1 T. Green, "A Review of EOS/ESD Field Failure in Military Equipment", Proc. 10th EOS/ESD symposium, 1998.
2 D.C. Wunsch, R.R. Bell, "Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages", Nuclear and Plasma Sciences Society, vol.15, pp.244, 12, Nov., 1968.
3 James E. Vinson, Juin J. Liou, "Electrostatic Discharge in Semiconductor Devices", Proc. of IEEE, vol. 86, pp.399-420, 1998.   DOI   ScienceOn
4 S. U. Kim., "ESD Induced Gate Oxide Damage During Wafer Fabrication Process", EOS/ESD symposium, Vol. EOS-14, pp. 99 - 105, 1992.
5 R. G. Chemelli, B. A. Unger, "ESD by Static Induction", EOS/ESD symposium, Vol. EOS-5, pp. 29 - 36, 1983.
6 C. Diaz, S. M. Kang, C. Duvury, "Tutorial Electrical Overstress and Electrostatic Discharge", IEEE Trans., Vol. 44, pp. 2 - 5, 1995.
7 Schreier L.A., "Electrostatic Damage Susceptibility of Semiconductor Devices", Reliability Physics Symposium, pp.151, April, 1978.
8 Lacrampe N., Caignet F., Bafleur M., Nolhier,N., Mauran N., "Characterization and modeling methodology for IC's ESD susceptibility at system level using VF-TLP tester", 29th Electrical Overstress/Electrostatic Discharge Symposium, pp.1, 16-21, Sep., 2007.
9 Amerasekera A., Abeelen W., Roozendaal L., Hannemann M., Schofield P., "ESD failure modes: characteristics mechanisms, and process influences", IEEE Transactions on Electron Devices, vol.39, pp.430, Feb., 1992.   DOI   ScienceOn
10 정전기 방전에 의한 전자계 복사의 특성 해석, 전자공학회논문지, 제 34권 D편 제 12호, 1997년 12.
11 Polgreen T.L., Chatterjee A., "Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow", IEEE Transactions on Electron Devices, vol.39, pp.379, Feb., 1992.   DOI   ScienceOn
12 IEC 61000-4-2 ; Electromagnetic Compatibility(EMC) Test ; ESD(Electro-Static Discharge) Test, 2001.