Failure Analysis and Solution of ESD for Amplifier Used in Telecommunication |
Hwang, Soon-Mi
(Reliability Technology Research Center, Korea Electronic Technology Institute)
Jung, Young-Baek (Reliability Technology Research Center, Korea Electronic Technology Institute) Kim, Chul-Hee (Reliability Technology Research Center, Korea Electronic Technology Institute) Lee, Kwan-Hoon (Reliability Technology Research Center, Korea Electronic Technology Institute) |
1 | T. Green, "A Review of EOS/ESD Field Failure in Military Equipment", Proc. 10th EOS/ESD symposium, 1998. |
2 | D.C. Wunsch, R.R. Bell, "Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages", Nuclear and Plasma Sciences Society, vol.15, pp.244, 12, Nov., 1968. |
3 | James E. Vinson, Juin J. Liou, "Electrostatic Discharge in Semiconductor Devices", Proc. of IEEE, vol. 86, pp.399-420, 1998. DOI ScienceOn |
4 | S. U. Kim., "ESD Induced Gate Oxide Damage During Wafer Fabrication Process", EOS/ESD symposium, Vol. EOS-14, pp. 99 - 105, 1992. |
5 | R. G. Chemelli, B. A. Unger, "ESD by Static Induction", EOS/ESD symposium, Vol. EOS-5, pp. 29 - 36, 1983. |
6 | C. Diaz, S. M. Kang, C. Duvury, "Tutorial Electrical Overstress and Electrostatic Discharge", IEEE Trans., Vol. 44, pp. 2 - 5, 1995. |
7 | Schreier L.A., "Electrostatic Damage Susceptibility of Semiconductor Devices", Reliability Physics Symposium, pp.151, April, 1978. |
8 | Lacrampe N., Caignet F., Bafleur M., Nolhier,N., Mauran N., "Characterization and modeling methodology for IC's ESD susceptibility at system level using VF-TLP tester", 29th Electrical Overstress/Electrostatic Discharge Symposium, pp.1, 16-21, Sep., 2007. |
9 | Amerasekera A., Abeelen W., Roozendaal L., Hannemann M., Schofield P., "ESD failure modes: characteristics mechanisms, and process influences", IEEE Transactions on Electron Devices, vol.39, pp.430, Feb., 1992. DOI ScienceOn |
10 | 정전기 방전에 의한 전자계 복사의 특성 해석, 전자공학회논문지, 제 34권 D편 제 12호, 1997년 12. |
11 | Polgreen T.L., Chatterjee A., "Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow", IEEE Transactions on Electron Devices, vol.39, pp.379, Feb., 1992. DOI ScienceOn |
12 | IEC 61000-4-2 ; Electromagnetic Compatibility(EMC) Test ; ESD(Electro-Static Discharge) Test, 2001. |