1 |
P. Pust, P. J. Schmidt, and W. Schnick, "A revolution in lighting," Nat. Mater. 14, 454-458 (2015).
DOI
|
2 |
C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "The efficiency challenge of nitride light-emitting diodes for lighting," Phys. Status Solidi A 212, 899-913 (2015).
DOI
|
3 |
J. Cho, J. H. Park, J. K. Kim, and E. F. Schubert, "White light-emitting diodes: History, progress, and future," Laser Photonics Rev. 11, 1600147 (2017).
DOI
|
4 |
Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, "White light emitting diodes with super-high luminous efficacy," J. Phys. D: Appl. Phys. 43, 354002 (2010).
DOI
|
5 |
M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, "New developments in green LEDs," Phys. Status Solidi A 206, 1125-1129 (2009).
DOI
|
6 |
S. Saito, R. Hashimoto, J. Hwang, and S. Nunoue, "InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range," Appl. Phys. Express 6, 111004 (2013).
DOI
|
7 |
M. A. Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. D. Carlo, "Efficiency drop in green InGaN/GaN light emitting diodes: The role of random alloy fluctuations," Phys. Rev. Lett. 116, 027401 (2016).
DOI
|
8 |
H. Y. Ryu, D. S. Shin, and J. I. Shim, "Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material," Appl. Phys. Lett. 100, 131109 (2012).
DOI
|
9 |
H. Y. Ryu, G. H. Ryu, Y. H. Choi, and B. J. Ma, "Modeling and simulation of efficiency droop in GaN-based blue light-emitting diodes incorporating the effect of reduced active volume of InGaN quantum wells," Curr. Appl. Phys. 17, 1298-1302 (2017).
DOI
|
10 |
E. M. Purcell, "Spontaneous emission probabilities at radio frequencies," Phys. Rev. 69, 681 (1946).
|
11 |
K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, "Surface-plasmon-enhanced light emitters based on InGaN quantum wells," Nat. Mater. 3, 601-605 (2004).
DOI
|
12 |
C. H. Lin, C. Hsieh, C. G. Tu, Y. Kuo, H. S. Chen, P. Y. Shih, G. H. Liao, Y. W. Kiang, C. C. Yang, C. H. Lai, G. R. He, J. H. Yeh, and T. C. Hsu, "Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering," Opt. Express 22, A842- A856 (2014).
DOI
|
13 |
G. Sun, J. B. Khurgin, and R. A. Soref, "Practical enhancement of spontaneous emission using surface plasmons," Appl. Phys. Let. 90, 111107 (2007).
DOI
|
14 |
K. G. Lee, K. Y. Choi, J. H. Kim, and S. H. Song, "Experimental observation of electroluminescence enhancement on green LEDs mediated by surface plasmons," Opt. Express 22, A1303-A1309 (2014).
DOI
|
15 |
K. Tateishi, M. Funato, Y. Kawakami, K. Okamoto, and K. Tamada, "Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films," Appl. Phys. Lett. 106, 121112 (2015).
DOI
|
16 |
C. Y. Chen, D. M. Yeh, Y. C. Lu, and C. C. Yang, "Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure," Appl. Phys. Lett. 89, 203113 (2006).
DOI
|
17 |
C. F. Chu, C. C. Cheng, W. H. Liu, J. Y. Chu, F. H. Fan, H. C. Cheng, T. Doan, and C. A. Tran, "High brightness GaN vertical light-emitting diodes on metal alloy for general lighting application," Proc. IEEE 98, 1197-1207 (2010).
DOI
|
18 |
A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, "High-power and high-efficiency InGaN-based light emitters," IEEE Trans. Electron Devices 57, 79-87 (2010).
DOI
|
19 |
C. G. Song, Y. J. Cha, S. K. Oh, J. S. Kwak, H. J. Park, and T. Jeong, "Optimized via-hole structure in GaN-based vertical-injection light-emitting diodes," J. Korean Phys. Soc. 68, 159-163 (2016).
DOI
|
20 |
H. Morawitz, "Self-coupling of a two-level system by a mirror," Phys. Rev. 187, 1792 (1969).
DOI
|
21 |
R. M. Amos and W. L. Barnes, "Modification of the spontaneous emission rate of Eu 31 ions close to a thin metal mirror," Phys. Rev. B 55, 7249-7254 (1997).
DOI
|
22 |
M. Nami and D. F. Feezell, "Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires," Opt. Express 22, 29445-29455 (2014).
DOI
|
23 |
H. Y. Ryu, "Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effect," Opt. Express 23, A1157-A1166 (2015).
DOI
|
24 |
Y. Xu, J. Vuckovic, R. K. Lee, O. J. Painter, A. Scherer, and A. Yariv, "Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity," J. Opt. Soc. Am. B 16, 465-474 (1999).
DOI
|
25 |
J. K. Hwang, H. Y. Ryu, and Y. H. Lee, "Spontaneous emission rate of an electric dipole in a general microcavity," Phys. Rev. B 60, 4688-4695 (1999).
DOI
|
26 |
A. Taflove, Computational Electrodynamics: The Finite-Difference Time-Domain Method (Artech House Inc., 1995).
|
27 |
E. D. Palik, Handbook of Optical Constants of Solids (Academic, 1998).
|