Browse > Article

서브테라헤르츠 CMOS 집적 회로 기술 동향  

Sim, Dong-Ha (서울과학기술대학교)
Publication Information
The Proceeding of the Korean Institute of Electromagnetic Engineering and Science / v.23, no.5, 2012 , pp. 15-24 More about this Journal
Keywords
Citations & Related Records
연도 인용수 순위
  • Reference
1 P. H. Siegel. "THz technology", IEEE Trans. on Microw. Theory Tech., vol. 50, no. 3, pp. 910-928, Mar. 2002.   DOI   ScienceOn
2 D. L. Woolard, E. R. Brown, M. Pepper, M. Kemp, "Terahertz frequency sensing and imaging: A time of reckoning future applications?", IEEE Proc., vol. 93, no. 10, pp. 1722-1743, Oct. 2005.   DOI
3 E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap, and K. K. O. "Progress and challenges towards terahertz CMOS intergrated circuits", IEEE J. Solid-State Circuits, vol. 45, no. 8, pp. 1554-1564, Aug. 2010.   DOI
4 I. Post, M. Akbar, G. Curello, S. Gannavaram, W. Hafez, U. Jalan, K. Komeyii, J. Lin, N. Lindert, J. Park, J. Rizk, G. Sacks, C. Tsai, D. Yeh, P. Bai, and C.-H. Jan, "A 65 nm CMOS SOC technology featuring strained silicon transistors for RF applications". in IEDM Tech Dig., pp. 1-3, Dec. 2006 .
5 S. Sankaran, K. K. O, "Schottky barrier diodes for mm-wave and detection in a foundry CMOS process", IEEE Electron Device Letts., vol. 26, no. 7, pp. 492-494, Jul. 2005.   DOI
6 R. Rassel, J. Johnson, B. Orner, S. Reynolds, M. Dahlstrom, J. Rascoe, A. Joseph, B. Gaucher, J. Dunn, and S. S. Onge, "Schottky barrier diodes for millimeter wave SiGe BiCMOS applications", in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, pp. 255-258, Oct. 2006.
7 S. Sankaran, C. Mao, E. Seok, D. Shim, C. Cao, R. Han, C. Hung, and K. K. O, "Towards terahertz operation of CMOS", in ISSCC Dig. Tech. Papers, pp. 202-203, Feb. 2009.
8 D. Shim, S. Sankaran, and K. K. O, "Complementray antiparallel Schottky barrier diode pair in a $0.13{\mu}m$ logic CMOS technology". IEEE Electron Device Lett., vol. 29, no. 6, pp. 606-608, Jun. 2008.   DOI
9 C..M. Hung, Y.-C. Ho. I-C. Wu, and K. K.. O, "High-Q capacitors implemented in a CMOS process for low-power wireless applications", IEEE Trans. Microw. Theory Tech., vol. 46. no. 5, pp. 505-511, May 1998.
10 T. Soorapanth, C. P. Yue, D. K. Shaeffer, T. H. Lee, and S. S. Woog, "Analysis and optimization of accumulation-mode varactor for RF ICs", in VLSI Symp. Tech. Dig., pp. 32-33, Jun. 1998.
11 H. Xu and K. K. O, "High-Q thick-gate-oxide MOS varactors with subdesign-rule channel lengths for millimeter-wave applications". IEEE Electron Device Lett., vol. 29, no. 4, pp. 363-365, Apr. 2008   DOI
12 M. Krach, J. Freyer, and M. Claassen, "Schottky diode tripler for 210 GHz", Electronics Lett., vol. 36, no. 10, pp. 858-859, May 2000.   DOI   ScienceOn
13 D. Shim, K. K. O, "Symmetric varactor in 130-nm CMOS for frequency multiplier applications". IEEE Electron Device Lett., vol. 32, no. 4, pp. 470-472, Apr. 2011.   DOI
14 E. Seok, C. Cao, D. Shim, D. J. Arenas, D. B. Tanner, C.-M. Hung, and K. K. O, "410-GHz CMOS push-push oscillator with a patch antenna", in IEEE ISSCC Dig. Tech. Papers, pp. 472-473, Feb. 2008.
15 K. Sengupta, A Hajimiri, "Distributed active radiation for THz signal generation", in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, pp. 288-289. 2011.
16 D. Shim, D. Koukis, D. Arenas, D. B. Tanner, and K. K. O, "553-GHz signal generation in CMOS using a quadruple-push oscillator," in Symp. VLSI Circuits Dig. Tech. Papers, pp. 154-155, Jun. 2011.
17 D. Huang, T. R. LaRoccan, M. F. Chang, L. Samoska, A. Fung, R. L. Campbell, and M. Andrews. "Terahertz CMOS frequency generator using linear superposition technique", IEEE J. Solid-State Circuits, vol. 43, no. 12, pp. 2730-2738, Dec. 2008.   DOI
18 O. Momeni, E. Afshari, "High power terahertz and millimeter-wave oscillator design: A systematic approach", IEEE Journal of Solid-State Circuits, Mar. 2011.
19 C. Mao, C. S. Nallani, S. Sankaran, E. Seok, and K. K. O, "125-GHz diode frequency doubler in $0.13{\mu}m$ CMOS", IEEE J. Solid-State Circuits, vol. 44, no. 5, pp. 1531-1538, May 2009.   DOI
20 R. Han, Y. Zhang, D. Coquillt, J. Hoy, H. Vide-lier, W. Knap, E. Brown, and K. K. O, "280-GHz shocttky diode detector in 130-nm digital CMOS", in IEEE Custom Integrated Circuits Conf. San Jose, CA, Sep. 2010.
21 F. Schuster, H. Videlier, A. Dupret, D. Coquillat, M. Sakowicz, J. Rostaing, M. Tchagaspanian, B. Giffard, and W. Knap, "A broadband THz imager in a low-cost CMOS technology". in ISSCC Dig. Tech. Papers, pp. 42-43. Feb. 2011.
22 J. Stake, S. H. Jones, L. Dillner, S. Hollung, and E. L. Kollberg, "Heterostructure-barrier-varactor design", IEEE Trans. Microw. Theory Tech., vol. 48, no. 4, pp. 677-682. Apr. 2000.   DOI   ScienceOn