Deep Level Defect Transient Spectroscopy Analysis of 4H-SiC SBD and JBS Diodes |
Byun, Dong-Wook
(Department of Electronic Materials Engineering, Kwang-woon University)
Shin, Myeong-Cheol (Department of Electronic Materials Engineering, Kwang-woon University) Moon, Jeong Hyun (Power Semiconductor Research Center, Korean Electrotechnology Research Institute (KERI)) Bahng, Wook (Power Semiconductor Research Center, Korean Electrotechnology Research Institute (KERI)) Shin, Weon Ho (Department of Electronic Materials Engineering, Kwang-woon University) Oh, Jong-Min (Department of Electronic Materials Engineering, Kwang-woon University) Park, Chulhwan (Department of Chemical Engineering, Kwang-woon University) Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwang-woon University) |
1 | B. J. Baliga, J. Appl. Phys., 53, 1759 (1982). [DOI: https://doi.org/10.1063/1.331646] DOI |
2 | J. Yang, S. Ahn, F. Ren, S. J. Pearton, S. Jang, and A. Kuramata, IEEE Electron Device Lett., 38, 906 (2017). [DOI: https://doi.org/10.1109/LED.2017.2703609] DOI |
3 | K. M. Geib, C. Wilson, R. G. Long, and C. W. Wilmsen, J. Appl. Phys., 68, 2796 (1990). [DOI: https://doi.org/10.1063/1.346457] DOI |
4 | W. Y. Son, M. C. Shin, M. Schweitz, S. K. Lee, and S. M. Koo, J. Nanoelectron. Optoelectron., 15, 777 (2020). [DOI: https://doi.org/10.1166/jno.2020.2818] DOI |
5 | C. Zhang, S. Srdic, S. Lukic, Y. Kang, E. Choi, and E. Tafti, Proc. 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (IEEE, Portland, USA, 2018) p. 3880. [DOI: https://doi.org/10.1109/ECCE.2018.8558373] |
6 | Y. J. Lee, S. Cho, J. H. Seo, S. J. Min, J. I. An, J. M. Oh, S. M. Koo, and D. Lee, J. Korean Inst. Electr. Electron. Mater. Eng., 31, 367 (2018). [DOI: https://doi.org/10.4313/JKEM.2018.31.6.367] DOI |
7 | Y. Pan, L. Tian, H. Wu, Y. Li, and F. Yang, Microelectron. Eng., 181, 10 (2017). [DOI: https://doi.org/10.1016/j.mee.2017.05.054] DOI |
8 | S. Sasaki, K. Kawahara, G. Feng, G. Alfieri, and T. Kimoto, J. Appl. Phys., 109, 013705 (2011). [DOI: https://doi.org/10.1063/1.3528124] DOI |
9 | S. J. Min, M. C. Shin, N. T. Nguyen, J. M. Oh, and S. M. Koo, Materials, 13, 445 (2020). [DOI: https://doi.org/10.3390/ma13020445] DOI |
10 | T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schoner, and N. Nordell, Phys. Status Solidi A, 162, 199 (1997). [DOI: https://doi.org/10.1002/1521-396X(199707)162:1<199: AID-PSSA199>3.0.CO;2-0] DOI |
11 | K. Kawahara, G. Alfieri, and T. Kimoto, J. Appl. Phys., 106, 013719 (2009). [DOI: https://doi.org/10.1063/1.3159901] DOI |
12 | B. Zippelius, J. Suda, and T. Kimoto, J. Appl. Phys., 111, 033515 (2012). [DOI: https://doi.org/10.1063/1.3681806] DOI |
13 | Y. D. Tang, X. Y. Liu, Z. D. Zhou, Y. Bai, and C. Z. Li, Chinese Phys. B, 28, 106101 (2019). [DOI: https://doi.org/10.1088/1674-1056/ab3cc2] DOI |
14 | T. Dalibor, G. Pensl, N. Nordell, and A. Schoner, Phys. Rev. B, 55, 13618 (1997). [DOI: https://doi.org/10.1103/PhysRevB.55.13618] DOI |
15 | L. Gelczuk, M. Dabrowska-Szata, M. Sochacki, and J. Szmidt, Solid-State Electron., 94, 56 (2014). [DOI: https://doi.org/10.1016/j.sse.2014.02.008] DOI |
16 | F. Fabbri, D. Natalini, A. Cavallini, T. Sekiguchi, R. Nipoti, and F. Moscatelli, Superlattices Microstruct., 45, 383 (2009). [DOI: https://doi.org/10.1016/j.spmi.2008.10.024] DOI |