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http://dx.doi.org/10.4313/JKEM.2021.34.3.193

Investigation on the Degradation of the Electrical Characteristics of a-IGZO Thin Film Transistor Under Gate Bias Stress  

Kim, Tae-Soo (School of Electronics and Information Engineering, Korea Aerospace University)
Jeon, Jae-Hong (School of Electronics and Information Engineering, Korea Aerospace University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.34, no.3, 2021 , pp. 193-197 More about this Journal
Abstract
The transfer characteristics of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT) showed the distortion in the subthreshold region after gate bias stress, in addition to the parallel shift of threshold voltage. The capacitance-voltage (C-V) curve was also deformed from its initial shape after the gate bias stress. This study analyzes both the C-V and transfer curves plotted on the same gate voltage axis in order to investigate the mechanism driving the distortion in the transfer curve. It is deduced that an additional interfacial trap states at the bottom interface of a-IGZO are produced during gate bias stress, thereby they exhibit the back channel effect, which explains the origin of the distortion in the transfer curve and the deformation of C-V curve.
Keywords
Thin film transistor; Oxide semiconductor; Bias stress;
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