IGZO TFT Stability Improvement Based on Various Passivation Materials
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Kim, Jaemin
(Department of Electrical and Computer Engineering, Sungkyunkwan University)
Park, Jinsu (Department of Electrical and Computer Engineering, Sungkyunkwan University) Yoon, Geonju (Department of Electrical and Computer Engineering, Sungkyunkwan University) Cho, Jaehyun (Department of Electrical and Computer Engineering, Sungkyunkwan University) Bae, Sangwoo (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) Kim, Jinseok (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) Kwon, Keewon (Department of Electrical and Computer Engineering, Sungkyunkwan University) Lee, Youn-Jung (Department of Electrical and Computer Engineering, Sungkyunkwan University) Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University) |
1 | J. M. Lee, I. T. Cho, J. H. Lee, and H. I. Kwon, Appl. Phys Lett., 93, 093504 (2008). [DOI: https://doi.org/10.1063/1.2977865] DOI |
2 | K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett., 95, 013502 (2009). [DOI: https://doi.org/10.1063/1.3159831] DOI |
3 | C. H. Tu, W. T. Lin, C. H. Chen, M. C. Hung, J. J. Chang, M. F. Chiang, and W. I Liao, J. Soc. Inf. Disp., 42, 1151 (2011). [DOI: https://doi.org/10.1889/1.3621028] |
4 | M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater., 16, 639 (2004). [DOI: https://doi.org/10.1021/cm0304546] DOI |
5 | A. Moldovan, F. Feldmann. M. Zimmer, J. Rentsch, J. Benick, and M. Hermle, Sol. Energy Mater. Sol. Cells, 142, 123 (2015). [DOI: https://doi.org/10.1016/j.solmat.2015.06.048] DOI |
6 | J. R. Lloyd, Thin Solid Films, 91, 175 (1982). [DOI: https://doi.org/10.1016/0040-6090(82)90431-X] DOI |
7 | A. Olziersky, P. Baequinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, and J. R. Morante, J. Appl. Phys., 108, 064505 (2010). [DOI: https://doi.org/10.1063/ 1.3477192] DOI |
8 | Y. Yang, G. Z. Hu, Y. Hao, X. H. Ma, S. Quan, L. Y. Yang, and S. G. Jiang, Chin. Phys. B, 19, 047301 (2010). [DOI: https://doi.org/10.1088/1674-1056/19/4/047301] DOI |
9 | L. Kavan, M. Gratzel, J. Rathousky, and A. Zukalb, J. Electrochem. SOC., 143, 394 (1996). [DOI: https://doi.org/10.1149/1.1836455] DOI |
10 | M. P. Walser, W. L. Kalb, T. Mathis, T. J. Brenner, and B. Batlogg, Appl. Phys. Lett., 94, 053303 (2009). [DOI:https://doi.org/10.1063/1.3077192] DOI |
11 | S. Y. Huang, T. C. Chang, M. C. Chen, T. C. Chen, F. Y. Jian, Y. C. Chen, H. C. Huang, and D. S. Gan, ESurf. Coat. Technol., 231, 117 (2013). [DOI: https://doi.org/10.1016/j.surfcoat.2011.12.047] DOI |
12 | S. H. Choi, J. H. Jang, J. J. Kim, and M. K. Han, IEEE Electron Device Lett., 33, 381 (2012). [DOI: https://doi.org/10.1109/LED.2011.2178112] DOI |
13 | Y. H. Kim, H. S Kim, J. I. Han, and S. K. Park, Appl. Phys Lett., 97, 092105 (2010). [DOI: https://doi.org/10.1063/1.3485056] DOI |
14 | M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, H. S. Shin, J. S. Park, J. K. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett., 90, 212114 (2007). [DOI: https://doi.org/10.1063/1.2742790] DOI |
15 | J. W. Park, D. Lee, H. Kwon, and S. Yoo, IEEE Electron Device Lett., 30, 362 (2009). [DOI: https://doi.org/10.1109/LED.2009.2013647] DOI |
16 | X. Cheng, M. Caironi, Y. Y. Noh, J. Wang, C. Newman, H. Yan, A. Facchetti, and H. Sirringhaus, Chem. Mater., 22, 1559 (2010). [DOI: https://doi.org/10.1021/cm902929b] DOI |
17 | W. L. Kalb, T. Mathis, S. Haas, A. F. Stassen, and B. Batlogg, Appl. Phys, Lett., 90, 092104 (2007). [DOI: https://doi.org/10.1063/1.2709894] DOI |
18 | H. S. Seo, J. U. Bae, D. H. Kim, Y. J. Park, C. D. Kim, I. B. Kang, I. J. Chung, J. H. Choi, and J. M. Myoung. Electrochem. Solid-State Lett., 12, H348 (2009). [DOI:https://doi.org/10.1149/1.3168522] DOI |
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