Browse > Article
http://dx.doi.org/10.4313/JKEM.2015.28.12.771

Design and Fabrication of Micro Patterns on Flexible Copper Clad Laminate (FCCL) Using Imprinting Process  

Min, Chul Hong (SYNOPEX INC., R&D Center)
Kim, Tae Seon (School of Information, Communications and Electronics Engineering, The Catholic University of Korea)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.12, 2015 , pp. 771-775 More about this Journal
Abstract
In this paper, we designed and fabricated low cost imprinting process for micro patterning on FCCL (flexible copper clad laminate). Compared to conventional imprinting process, developed fabrication method processing imprint and UV photolithography step simultaneously and it does not require resin etch process and it can also reduce the fabrication cost and processing time. Based on proposed method, patterns with $10{\mu}m$ linewidth are fabricated on $180mm{\times}180mm$ FCCL. Compared to conventional methods using LDI (laser direct imaging) equipment that showed minimum line with $10{\sim}20{\mu}m$, proposed method shows comparable pattern resolution with very competitive price and shorter processing time. In terms of mass production, it can be applied to fabrication of large-area low cost applications including FPCB.
Keywords
Imprint; FCCL (flexible copper clad laminate); FPCB; Resin;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 A. Cherala, P. Schumaker, B. Mokaberi, K. Selinidis, B. J. Choi, M. J. Meissl, N. N. Khusnatdinov, D. LaBrake, and S. Sreenivasan, IEEE/ASME Trans. Mech., 20, 122 (2015). [DOI: http://dx.doi.org/10.1109/TMECH.2013.2297679]   DOI
2 Takei, Satoshi, and M. Hanabata, Appl. Phys. Lett., 107, 14 (2015). [DOI: http://dx.doi.org/10.1063/1.4932647]   DOI
3 S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Appl. Phys, Lett., 67, 3114 (1995). [DOI: http://dx.doi.org/10.1063/1.114851]   DOI
4 J. Haisma, M. Verheijen, and K. Heuvel, J. Vac. Sci. Technol. B, 14, 4124 (1996). [DOI: http://dx.doi.org/10.1116/1.588604]   DOI
5 S. Thoms, D. S. Macintyre, D. Moran, and I. Thayne, J. Vac. Sci. Technol. B, 22, 3271 (2004). [DOI: http://dx.doi.org/10.1116/1.1821504]   DOI
6 Y. K. Kim, J. H. Kim, B. S. You, J. S. Jang, K. H. Kwon, J. Korean Inst. Electr. Electron. Mater. Eng., 24, 10 (2011).
7 M. Austin, H. Ge, W. Wu, M. Li, and Z. Yu, Appl. phys. Lett., 84, 5229 (2004). [DOI: http://dx.doi.org/10.1063/1.1766071]   DOI
8 D. Morihara, H. Hiroshima, and Y. Hirai, Microelectron. Eng., 86, 684 (2009). [DOI: http://dx.doi.org/10.1016/j.mee.2008.12.005]   DOI
9 S. E. Lee, H. G. Lim, S. S. Lee, D. G. Choi, D. Lee, and S. U. Hong, Macromol. Res., 21, 916 (2013). [DOI: http://dx.doi.org/10.1007/s13233-013-1107-5]   DOI