1 |
A. Cherala, P. Schumaker, B. Mokaberi, K. Selinidis, B. J. Choi, M. J. Meissl, N. N. Khusnatdinov, D. LaBrake, and S. Sreenivasan, IEEE/ASME Trans. Mech., 20, 122 (2015). [DOI: http://dx.doi.org/10.1109/TMECH.2013.2297679]
DOI
|
2 |
Takei, Satoshi, and M. Hanabata, Appl. Phys. Lett., 107, 14 (2015). [DOI: http://dx.doi.org/10.1063/1.4932647]
DOI
|
3 |
S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Appl. Phys, Lett., 67, 3114 (1995). [DOI: http://dx.doi.org/10.1063/1.114851]
DOI
|
4 |
J. Haisma, M. Verheijen, and K. Heuvel, J. Vac. Sci. Technol. B, 14, 4124 (1996). [DOI: http://dx.doi.org/10.1116/1.588604]
DOI
|
5 |
S. Thoms, D. S. Macintyre, D. Moran, and I. Thayne, J. Vac. Sci. Technol. B, 22, 3271 (2004). [DOI: http://dx.doi.org/10.1116/1.1821504]
DOI
|
6 |
Y. K. Kim, J. H. Kim, B. S. You, J. S. Jang, K. H. Kwon, J. Korean Inst. Electr. Electron. Mater. Eng., 24, 10 (2011).
|
7 |
M. Austin, H. Ge, W. Wu, M. Li, and Z. Yu, Appl. phys. Lett., 84, 5229 (2004). [DOI: http://dx.doi.org/10.1063/1.1766071]
DOI
|
8 |
D. Morihara, H. Hiroshima, and Y. Hirai, Microelectron. Eng., 86, 684 (2009). [DOI: http://dx.doi.org/10.1016/j.mee.2008.12.005]
DOI
|
9 |
S. E. Lee, H. G. Lim, S. S. Lee, D. G. Choi, D. Lee, and S. U. Hong, Macromol. Res., 21, 916 (2013). [DOI: http://dx.doi.org/10.1007/s13233-013-1107-5]
DOI
|