Browse > Article
http://dx.doi.org/10.4313/JKEM.2015.28.10.625

Effect on the Transport Current and Quench Resistance of the HTS Wire with Normal-Superconducting Junction During the Fault Current Applying  

Hong, Gong-Hyun (Department of Electrical Engineering, Chonbuk National University)
Du, Ho-Ik (International Standardization & Certification for Superconducting Power Apparatus and Human Resource Development Center, Chonbuk National University)
Han, Byoung-Sung (International Standardization & Certification for Superconducting Power Apparatus and Human Resource Development Center, Chonbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.10, 2015 , pp. 625-629 More about this Journal
Abstract
The second-generation HTS wire its YBCO coated conductor is widely used in the superconducting power apparatus. The YBCO coated conductor uses the normal-superconducting junction to increase the transport capacity of superconducting power apparatus when it is applied. The normal-superconducting junction can be a cause of reducing the stability of the superconducting power apparatus when a fault current is applied. Thus, in this study we have conducted the effect analysing normal-superconducting junction for the fault current using transport current and quench resistance. From the experimental results when a fault current is applied, the effect on the normal-superconducting junction is reduced the larger the amplitude of the fault current and is helpful to maintain the thermal stability of the HTS wire.
Keywords
YBCO coated conductor; Quench resistance; Transport current; Normal-superconducting junction;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 O. B. Hyun, World of Electricity Journal, 59, 10 (2010).
2 H. I. Du, Y. J. Kim, D. H. Lee, and B. S. Han, IEEE Transactions on, 20, 3 (2010).
3 S. O. Heo, T. M. Kim, B. S. Han, and H. I. Du, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 904 (2013).
4 T. M. Kim, G. H. Hong1, B. S. Han, and H. I. Du, J. Korean Inst. Electr. Electron. Mater. Eng., 27, 10 (2014).