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http://dx.doi.org/10.4313/JKEM.2013.26.11.821

Liquid Crystal Alignment on Multi-stacked Layer HfO2 Thin Films Using a Solution-process  

Kim, Dai-Hyun (Yonsei Institute of Green Technology)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.11, 2013 , pp. 821-825 More about this Journal
Abstract
Effect of multi-stacked layer (MSL), 0.1 mol (M) and 0.3 mol (M) hafnium oxide ($HfO_2$) alignment layers were fabricated via a solution-process for LCs orientation. The solutions were spin-coated and annealed in a furnace. MSL consists of three sub-layers using 0.1 M solution, mono-layer (ML) is composed of 0.3 M $HfO_2$ solution. Then ion-beam irradiation was treated with 1.8 keV for 2 min. $HfO_2$-based LC cells were investigated through photographs, pre-tilt angle using crystal rotation method, X-ray photoelectron spectroscopy (XPS) measurement, and surface roughness using atomic force microscopy(AFM) for their characteristic research. Good LC orientation characteristics were observed on MSL $HfO_2$ surface. The LC alignment mechanism on MSL $HfO_2$ and ML $HfO_2$ surfaces was attributed to van der Waals (VDW) interaction between the LC molecular and substrate surface.
Keywords
Multi-stacked layer; Hafnium oxide; Solution-process; Liquid crystal alignment;
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