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http://dx.doi.org/10.4313/JKEM.2011.24.6.458

Study on the Electrical Characteristics of Solution-processed ZrInZnO Thin-film Transistors  

Jeong, Tae-Hoon (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Si-Joon (School of Electrical and Electronic Engineering, Yonsei University)
Yoon, Doo-Hyun (School of Electrical and Electronic Engineering, Yonsei University)
Jeong, Woong-Hee (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Dong-Lim (School of Electrical and Electronic Engineering, Yonsei University)
Lim, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.6, 2011 , pp. 458-462 More about this Journal
Abstract
Soution-processed ZrInZnO (ZIZO) thin-film transistors (TFTs) with varying Zr content were fabricated. The ZIZO TFT (Zr=20 at. %/Zn) has an optimal performance with the saturation field effect mobility of 0.77 $cm^2/Vs$, the threshold voltage (Vth) of 2.1 V, the on/off ratio of $4.95{\times}10^6$, and subthreshold swing (S.S) of 0.73 V/decade. Using this optimized ZIZO TFT, the positive and negative gate bias stress according to annealing temperature was also investigated. While the Vth shifts dramatically after 1,000 s of both gate bias stresses, variations in the S.S are negligible. It suggests that electrons or holes are tem porarily trapped in the gate insulator, the semiconductor, or the interface between both layers.
Keywords
Oxide semiconductor; ZrInZnO; TFT; Mobility; Threshold voltage; Stability; Solution process;
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1 G. H. Kim, W. H. Jeong, B. D. Ahn, H. S. Shin, H. J. Kim, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Appl. Phys. Lett., 96, 163506 (2010).   DOI
2 D. N. Kim, D. L. Kim, G. H. Kim, S. J. Kim, Y. S. Rim, W. H. Jeong, and H. J. Kim, Appl. Phys. Lett., 97, 192105 (2010).   DOI
3 S. J. Kim, G. H. Kim, D. L. Kim, D. N. Kim, and H. J. Kim, Phys. Status Solid A, 207, 1668 (2010).   DOI
4 S. J. Kim, D. L. Kim, D. N. Kim, and H. J. Kim, J. Inf. Disp., 11, 165 (2010).   DOI
5 S. M. Yoon, S. H. Yang, S. W. Jung, C. W. Byun, S. H. K. Park, C. S. Hwang, and H. Ishiwara, Electrochem. Solid State Lett., 13, 141 (2010).   DOI
6 K. B. Park, J. B. Seon, G. H. Kim, M. Yang, B. Koo, H. J. Kim, M. K. Ryu, and S. Y. Lee, IEEE Electron Device Lett., 31, 311 (2010).   DOI   ScienceOn
7 Y. J. Chang, D. H. Lee, G. S. Herman, and C. H. Chang, Electrochem. Solid State Lett., 10, 135 (2007).
8 K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hiromich, and H. Hosono, Nature, 432, 488 (2004).   DOI
9 E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. Rego, G. Goncalves, A. Vila, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett., 92,222103 (2008).   DOI
10 D. H. Cho, S. Yang, C. Byun, J. Shin, M. K. Ryu, S. H. K. Park, C. S. Hwang, S. M. Chung, W. S. Cheong, S. M. Yoon, and H. Y. Chu, Appl. Phys. Lett., 93, 142111 (2008).   DOI
11 J. S. Park, K. S. Kim, Y. G. Park, Y. G. Mo, H. D. Kim, and J. K. Jeong, Adv. Mater., 21, 329 (2009).   DOI
12 W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Appl. Phys. Lett., 96, 093503 (2010).   DOI