Browse > Article
http://dx.doi.org/10.4313/JKEM.2011.24.5.374

A Printing Process Combining Screen Printing with Reverse Off-set for a Fine Patterning of Electrodes on Large Area Substrate  

Park, Ji-Eun (Department of Electronics Engineering, Dong-A University)
Song, Chung-Kun (Department of Electronics Engineering, Dong-A University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.5, 2011 , pp. 374-380 More about this Journal
Abstract
In this paper a printing process for patterning electrodes on large area substrate was developed by combining screen printing with reverse off-set printing. Ag ink was uniformly coated by screen printing. And then etching resist (ER) was patterned in the Ag film by reverse off-set printing, and then the non-desired Ag film was etched off by etchant. Finally, the ER was stripped-off to obtain the final Ag patterns. We extracted the suitable conditions of reverse Using the process we successfully fabricated gate electrodes and scan bus lines of OTFT-backplane used for e-paper, in which the diagonal size was 6 inch, the resolution $320{\times}240$, the minimum line width 30 um, and sheet resistance 1 ${\Omega}/{\Box}$.
Keywords
Reverse offset printing; OTFT; Gate electrodes; Etching resist ink; Screen printing;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 T. M. Lee, T. G. Kang, J. S. Yang, J. D. Jo, K. Y. Kim, B. O. Choi, and D. S. Kim, IEEE Transactions on Electronics Packaging Manufacturing, 31, 202 (2008).   DOI
2 T. M. Lee, T. G. Kang, J. S. Yang, J. D Jo, K. Y. Kim, B. O. Choi, and D. S. Kim, J. Manuf. Sci. and E-T ASME, 130, 031113 (2008).   DOI
3 LG Display, Conference on Printed Electronics Europe, Germany (2010).
4 X. Yin and S. Kumar, Phys. Fluids., 17, 063101 (2005).   DOI
5 K. J. Baeg, S. W. Jung, J. B. Koo, I. K. You, and B. G. Yu, Trend Analysis of Electronic and Communication, 25, 33 (2010).
6 D. S. Kim and T. M. Lee, J. Korean Soc. Mech. Eng., 46, 38 (2006).
7 M. Pudas, J. Hagberg, and S. Leppavuori, Int. J. Electron., 92, 251. (2005)   DOI
8 M. Y. Lee, M. W. Lee, J. E. Park, J. S. Park, and C. K. Song, Microelectron. Eng., 87, 1922 (2009).
9 B. J. Ahn, K. J. Han, and S. L. Ko, J. Korean Soc. Mech. Eng., 34, 263 (2010).   DOI
10 W. Shen, Y. Mao, G. Murray, and J. Tian, J. colloid Interf. Sci., 318, 348 (2008).   DOI
11 M. Pudas and J. Hagberg, Int. J. Electron., 92, 251 (2005).   DOI
12 J. Seo and Y. H. Han, Machine and Material, KIMM, 39 (1999).
13 X. Yin and S. Kumar, Chem. Eng. Sci., 61, 1146 (2006).   DOI
14 B. J. Ramsey, P. S. A. Evans, D. Harrison, Journal Electronic Manufacturing, 7, 63 (1997).   DOI
15 B. O. Choi, D. S. Kim, D. S. Lee, T. M. Kim, C. H. Lee, M. H. Kim, and K. J. Lim, J. Korean Soc. Mech. Eng., 46, 67 (2006).
16 C. H. Kim, T. M. Lee, D. S. Kim, and B. O. Choi, J. Korean Soc. for Prec. Eng., 24, 74 (2007).