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http://dx.doi.org/10.4313/JKEM.2010.23.6.431

Dependence of Device Performance and Reliability on Channel Direction in PMOSFET's  

Bok, Jung-Deuk (Department of Electronics Engineering, Chungnam National University)
Park, Ye-Ji (Department of Electronics Engineering, Chungnam National University)
Han, In-Shik (Department of Electronics Engineering, Chungnam National University)
Kwon, Hyuk-Min (Department of Electronics Engineering, Chungnam National University)
Park, Byoung-Seok (Department of Electronics Engineering, Chungnam National University)
Park, Sang-Uk (Department of Electronics Engineering, Chungnam National University)
Lim, Min-Gyu (SMS, MagnaChip Semiconductor)
Chung, Yi-Sun (SMS, MagnaChip Semiconductor)
Lee, Jung-Hwan (SMS, MagnaChip Semiconductor)
Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.6, 2010 , pp. 431-435 More about this Journal
Abstract
In this paper, we investigated the dependence of device performance and hot carrier lifetime on the channel direction of PMOSFET. $I_{D.sat}$ vs. $I_{Off}$ characteristic of PMOSFET with <100> channel direction is greater than that with <110> channel direction because carrier mobility of <100> channel direction is greater than that of <110> channel direction. However, hot carrier lifetime for <110> channel direction is much lower than that with <110> channel due to the greater impact ionization rate in the <100> channel direction. Therefore, concurrent consideration of reliability characteristics and device performance is necessary for channel strain engineering of MOSFETs.
Keywords
Sub-micron CMOS; CMOSFET; Channel direction; DAHC; Impact ionization rate;
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