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http://dx.doi.org/10.4313/JKEM.2008.21.7.603

Photoluminescence of Neutron-irradiated GaN Films and Nanowires  

Seong, Ho-Jun (Department of Electrical Engineering, Korea University)
Yeom, Dong-Hyuk (Department of Electrical Engineering, Korea University)
Kim, Hyun-Suk (Department of Electrical Engineering, Korea University)
Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University)
Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.7, 2008 , pp. 603-609 More about this Journal
Abstract
Photoluminescence (PL) of neutron-irradiated GaN films and nanowires is investigated in this study. The GaN films and nanowires were irradiated by neutron beams in air at room temperature, and the neutron-irradiated films and nanowires were annealed in an atmosphere of $NH_3$ at temperatures ranging from 500 to $1100^{\circ}C$. The line-shapes of the PL spectra taken from the neutron-irradiated GaN films and nanowires were changed differently with increasing annealing temperature. In this study, light-emitting centers created in the neutron-irradiated GaN films and nanowires are examined and their origins are discussed. In addition, it is suggested here that the neutron-transmutation-doping is a simple and useful means of homogeneous impurity doping into nanowires with control of the doping concentration.
Keywords
Neutron-transmutation-doping(NTD); GaN; Nanowires; Photoluminescence(PL);
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