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http://dx.doi.org/10.4313/JKEM.2007.20.2.152

Fabrication of Li2CO3-doped Thin Film Bulk Acoustic Resonator and Structural, Electrical Properties as a Function of Annealing Temperatures  

Kim, Bong-Seok (성균관대학교 정보통신공학과 전자소자응용연구실)
Kim, Eung-Kwon (성균관대학교 정보통신공학과 전자소자응용연구실)
Lee, Tae-Yong (성균관대학교 정보통신공학과 전자소자응용연구실)
Oh, Su-Young (성균관대학교 정보통신공학과 전자소자응용연구실)
Song, Joon-Tae (성균관대학교 정보통신공학과 전자소자응용연구실)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.2, 2007 , pp. 152-155 More about this Journal
Abstract
In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.
Keywords
$Li_{2}CO_{3}:ZnO$; FBAR; Frequency characteristic; Annealing temperature;
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