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http://dx.doi.org/10.4313/JKEM.2006.19.10.889

Effects of Citric Acid as a Complexing Agent on Material Removal in Cu CMP  

Jung Won-Duck (부산대학교 정밀기계공학과)
Park Boum-Young (부산대학교 정밀기계공학과)
Lee Hyun-Seop (부산대학교 정밀기계공학과)
Jeong Hea-Do (부산대학교 기계공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.10, 2006 , pp. 889-893 More about this Journal
Abstract
Chemical mechanical polishing (CMP) achieves surface planrity through combined mechanical and chemical means. The role of slurry is very important in metal CMP. Slurry used in metal CMP normally consists of oxidizers, complexing agents, corrosion inhibitors and abrasives. This paper investigates the effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$. In order to study chemical effects of citric acid, X-ray photoelectron spectroscopy (XPS) was peformed on Cu sample after etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but $CU/CU_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu surface decrease. According to decrease of wear resistance on Cu surface removal rate increases from $285\;{\AA}/min\;to\;8645\;{\AA}/min$ in Cu CMP.
Keywords
Chemical mechanical polishing; Complexing agent; X-ray photoelectron spectroscopy; H/E ratio;
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