1 |
Blake P, Hill E W, Castro Neto A H, Novoselov K S, Jiang D, Yang R, Booth T J, and Geim A K (2007) Making graphene visible. Appl. Phys. Lett. 91, 063124.
DOI
|
2 |
Cancado L G, Jorio A, Ferreira E H M, Stavale F, Achete C A, Capaz R B, Moutinho M V O, Lombardo A, Kulmala T S, and Ferrari A C (2011) Quantifying defects in graphene via Raman spectroscopy at different excitation energies. Nano Lett. 11, 3190-3196.
DOI
|
3 |
Carvalho B R, Malard L M, Alves J M, Fantini C, and Pimenta M A (2015) Symmetry-dependent exciton-phonon coupling in 2D and bulk observed by resonance Raman scattering. Phys. Rev. Lett. 114, 136403.
DOI
|
4 |
Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, and Geim A K (2009) The electronic properties of graphene. Rev. Mod. Phys. 81, 109-162.
DOI
|
5 |
Chakraborty B, Bera A, Muthu D V S, Bhowmick S, Waghmare U V, and Sood A K (2012) Symmetry-dependent phonon renormalization in monolayer transistor. Phys. Rev. B 85, 161403.
DOI
|
6 |
Chakraborty B, Matte H S S R, Sood A K, and Rao C N R (2013) Layerdependent resonant Raman scattering of a few layer . J. Raman Spectrosc. 44, 92-96.
DOI
|
7 |
Chen S Y, Zheng C, Fuhrer M S, and Yan J (2015) Helicity-resolved Raman scattering of , , , and atomic layers. Nano Lett. 15, 2526-2532.
DOI
|
8 |
Cong C, Yu T, Sato K, Shang J, Saito R, Dresselhaus G F, and Dresselhaus M S (2011) Raman characterization of ABA- and ABC-stacked trilayer graphene. ACS Nano 5, 8760-8768.
DOI
|
9 |
Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, and Bolotin K I (2013) Bandgap engineering of strained monolayer and bilayer . Nano Lett. 13, 3626-3630.
DOI
|
10 |
Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, and Hone J (2010) Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722-726.
DOI
|
11 |
del Corro E, Terrones H, Elias A, Fantini C, Feng S, Nguyen M A, Mallouk T E, Terrones M, and Pimenta M A (2014) Excited excitonic states in 1L, 2L, 3L, and bulk observed by resonant Raman spectroscopy. ACS Nano 8, 9629-9635.
DOI
|
12 |
Dresselhaus M S, Jorio A, Souza Filho A G, and Saito R (2010) Defect characterization in graphene and carbon nanotubes using Raman spectroscopy. Philos. Trans. R. Soc. A Math. Phys. Eng. Sci. 368, 5355-5377.
DOI
|
13 |
Eckmann A, Felten A, Mishchenko A, Britnell L, Krupke R, Novoselov K S, and Casiraghi C (2012) Probing the nature of defects in graphene by Raman spectroscopy. Nano Lett. 12, 3925-3930.
DOI
|
14 |
Fan J H, Gao P, Zhang A M, Zhu B R, Zeng H L, Cui X D, He R, and Zhang Q M (2014) Resonance Raman scattering in bulk 2H-MX2 (M = Mo, W; X = S, Se) and monolayer . J. Appl. Phys. 115, 053527.
DOI
|
15 |
Golasa K, Grzeszczyk M, Leszczynski P, Faugeras C, Nicolet A A L, Wysmolek A, Potemski M, and Babinski A (2014) Multiphonon resonant Raman scattering in . Appl. Phys. Lett. 104, 092106.
DOI
|
16 |
Ferrari A C and Basko D M (2013) Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 8, 235-246.
DOI
|
17 |
Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S, and Geim A K (2006) Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401.
DOI
|
18 |
Geim A K and Novoselov K S (2007) The rise of graphene. Nat. Mater. 6, 183-191.
DOI
|
19 |
Jegal S, Hao Y, Yoon D, Ruoff R S, Yun H, Lee S W, and Cheong H (2013) Crystallographic orientation of early domains in CVD graphene studied by Raman spectroscopy. Chem. Phys. Lett. 568-569, 146-150.
DOI
|
20 |
Klots A R, Newaz A K M, Wang B, Prasai D, Krzyzanowska H, Lin J, Caudel D, Ghimire N J, Yan J, Ivanov B L, Velizhanin K A, Burger A, Mandrus D G, Tolk N H, Pantelides S T, and Bolotin K I (2014) Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. Sci. Rep. 4, 6608.
DOI
|
21 |
Lee C, Yan H, Brus L E, Heinz T F, Hone J, and Ryu S (2010) Anomalous lattice vibrations of single- and few-layer . ACS Nano 4, 2695-2700.
DOI
|
22 |
Lee J E, Ahn G, Shim J, Lee Y S, and Ryu S (2012) Optical separation of mechanical strain from charge doping in graphene. Nat. Commun. 3, 1024.
DOI
|
23 |
Lee J U, Park J, Son Y W, and Cheong H (2015) Anomalous excitonic resonance Raman effects in few-layered . Nanoscale 7, 3229-3236.
DOI
|
24 |
Livneh T and Spanier J E (2015) A comprehensive multiphonon spectral analysis in . 2D Mater. 2, 035003.
DOI
|
25 |
Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, and Zhang Y (2014) Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372-377.
DOI
|
26 |
Li S L, Miyazaki H, Song H, Kuramochi H, Nakaharai S, and Tsukagoshi K (2012) Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates. ACS Nano 6, 7381-7388.
DOI
|
27 |
Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, and Ye P D (2014) Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041.
DOI
|
28 |
Lui C H, Li Z, Chen Z, Klimov P V, Brus L E, and Heinz T F (2011) Imaging stacking order in few-layer graphene. Nano Lett. 11, 164-169.
DOI
|
29 |
Luo X, Zhao Y, Zhang J, Toh M, Kloc C, Xiong Q, and Quek S Y (2013) Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional . Phys. Rev. B 88, 195313.
DOI
|
30 |
Mak K F, Lee C, Hone J, Shan J, and Heinz T F (2010) Atomically thin : a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805.
DOI
|
31 |
Mignuzzi S, Pollard A J, Bonini N, Brennan B, Gilmore I S, Pimenta M A, Richards D, and Roy D (2015) Effect of disorder on Raman scattering of single-layer . Phys. Rev. B 91, 195411.
DOI
|
32 |
Mohiuddin T M G, Lombardo A, Nair R R, Bonetti A, Savini G, Jalil R, Bonini N, Basko D M, Galiotis C, Marzari N, Novoselov K S, Geim A K, and Ferrari A C (2009) Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Gruneisen parameters, and sample orientation. Phys. Rev. B 79, 205433.
DOI
|
33 |
Pimenta M A, del Corro E, Carvalho B R, Fantini C, and Malard L M (2015) Comparative study of Raman spectroscopy in graphene and -type transition metal dichalcogenides. Acc. Chem. Res. 48, 41-47.
DOI
|
34 |
Molina-Sanchez A and Wirtz L (2011) Phonons in single-layer and fewlayer and . Phys. Rev. B 84, 155413.
DOI
|
35 |
Nguyen T A, Lee J U, Yoon D, and Cheong H (2014) Excitation energy dependent Raman signatures of ABA- and ABC-stacked few-layer graphene. Sci. Rep. 4, 4630.
|
36 |
Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, and Firsov A A (2004) Electric field effect in atomically thin carbon films. Science 306, 666-669.
DOI
|
37 |
Qiu D Y, da Jornada F H, and Louie S G (2013) Optical spectrum of : many-body effects and diversity of exciton states. Phys. Rev. Lett. 111, 216805.
DOI
|
38 |
Scheuschner N, Ochedowski O, Schleberger M, and Maultzsch J (2012) Resonant Raman profiles and -photoluminescence of atomically thin layers of molybdenum disulfide. Phys. Status Solidi 249, 2644-2647.
DOI
|
39 |
Staiger M, Gillen R, Scheuschner N, Ochedowski O, Kampmann F, Schleberger M, Thomsen C, and Maultzsch J (2015) Splitting of monolayer out-of-plane ' Raman mode in few-layer . Phys. Rev. B 91, 195419.
DOI
|
40 |
Tan P H, Han W P, Zhao W J, Wu Z H, Chang K, Wang H, Wang Y F, Bonini N, Marzari N, Pugno N, Savini G, Lombardo A, and Ferrari A C (2012) The shear mode of multilayer graphene. Nat. Mater. 11, 294-300.
DOI
|
41 |
Yan J, Zhang Y, Kim P, and Pinczuk A (2007) Electric field effect tuning of electron-phonon coupling in graphene. Phys. Rev. Lett. 98, 166802.
DOI
|
42 |
Tonndorf P, Schmidt R, Bottger P, Zhang X, Borner J, Liebig A, Albrecht M, Kloc C, Gordan O, Zahn D R T, Michaelis de Vasconcellos S, and Bratschitsch R (2013) Photoluminescence emission and Raman response of monolayer , , and . Opt. Express 21, 4908-4916.
DOI
|
43 |
Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, and Strano M S (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712.
DOI
|
44 |
Wang Y, Cong C, Qiu C, and Yu T (2013) Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer under uniaxial strain. Small 9, 2857-2861.
DOI
|
45 |
Yoon D, Moon H, Cheong H, Choi J, Choi J, and Park B (2009a) Variations in the Raman spectrum as a function of the number of graphene layers. J. Korean Phys. Soc. 55, 1299-1303.
DOI
|
46 |
Yoon D, Moon H, Son Y W, Choi J S, Park B H, Cha Y H, Kim Y D, and Cheong H (2009b) Interference effect on Raman spectrum of graphene on /Si. Phys. Rev. B 80, 125422.
DOI
|
47 |
Yoon D, Son Y W, and Cheong H (2011) Strain-dependent splitting of the double-resonance raman scattering band in graphene. Phys. Rev. Lett. 106, 155502.
DOI
|
48 |
Zhang X, Han W P, Wu J B, Milana S, Lu Y, Li Q Q, Ferrari A C, and Tan P H (2013) Raman spectroscopy of shear and layer breathing modes in multilayer . Phys. Rev. B 87, 115413.
DOI
|
49 |
Zhang X, Qiao X F, Shi W, Wu J B, Jiang D S, and Tan P H (2015) Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 44, 2757-2785.
DOI
|
50 |
Zhao W, Ghorannevis Z, Amara K K, Pang J R, Toh M, Zhang X, Kloc C, Tan P H, and Eda G (2013a) Lattice dynamics in mono- and few-layer sheets of and . Nanoscale 5, 9677.
DOI
|
51 |
Zhao Y, Luo X, Li H, Zhang J, Araujo P T, Gan C K, Wu J, Zhang H, Quek S Y, Dresselhaus M S, and Xiong Q (2013b) Interlayer breathing and shear modes in few-trilayer and . Nano Lett. 13, 1007-1015.
DOI
|